Vladimir A. Dmitriev

Person

Fuquay-Varina, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
HVPE apparatus and methods for growing indium nitride and indium ni...
- Patent number 11,661,673
- Issue date May 30, 2023
- Ostendo Technologies, Inc.
- Alexander L. Syrkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods for controlling gas flows in a HVPE reactor
- Patent number 9,416,464
- Issue date Aug 16, 2016
- Ostendo Technologies, Inc.
- Vladimir A. Dmitriev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
HVPE apparatus and methods for growth of p-type single crystal grou...
- Patent number 8,647,435
- Issue date Feb 11, 2014
- Ostendo Technologies, Inc.
- Vladimir A. Dmitriev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bulk GaN and AlGaN single crystals
- Patent number 8,372,199
- Issue date Feb 12, 2013
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bulk GaN and AlGaN single crystals
- Patent number 8,092,596
- Issue date Jan 10, 2012
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for fabricating crack-free Group III nitride s...
- Patent number 8,092,597
- Issue date Jan 10, 2012
- Freiberger Compound Materials GmbH
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Grant
HVPE apparatus and methods for growth of indium containing material...
- Patent number 7,727,333
- Issue date Jun 1, 2010
- Technologies and Devices International, Inc.
- Alexander L. Syrkin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for epitaxially growing semiconductor device structures w...
- Patent number 7,670,435
- Issue date Mar 2, 2010
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,611,586
- Issue date Nov 3, 2009
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for achieving low defect density AlGaN single crystal boules
- Patent number 7,556,688
- Issue date Jul 7, 2009
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fabricating crack-free Group III nitride s...
- Patent number 7,501,023
- Issue date Mar 10, 2009
- Technologies and Devices, International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,279,047
- Issue date Oct 9, 2007
- Technologies and Devices, International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing methods for semiconductor devices with multiple III-V...
- Patent number 6,955,719
- Issue date Oct 18, 2005
- Technologies and Devices, Inc.
- Vladimir A. Dmitriev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bulk GaN and ALGaN single crystals
- Patent number 6,936,357
- Issue date Aug 30, 2005
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating a P-N heterojunction device utilizing HVPE g...
- Patent number 6,890,809
- Issue date May 10, 2005
- Technologies and Deviles International, Inc.
- Sergey Karpov
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-b...
- Patent number 6,849,862
- Issue date Feb 1, 2005
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Apparatus for epitaxially growing semiconductor device structures w...
- Patent number 6,706,119
- Issue date Mar 16, 2004
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of epitaxially growing device structures with submicron grou...
- Patent number 6,660,083
- Issue date Dec 9, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 6,656,285
- Issue date Dec 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of epitaxially growing submicron group III nitride layers ut...
- Patent number 6,656,272
- Issue date Dec 2, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for achieving low defect density GaN single crystal boules
- Patent number 6,616,757
- Issue date Sep 9, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating bulk GaN single crystals
- Patent number 6,613,143
- Issue date Sep 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing III-V compound semiconductor structures with an...
- Patent number 6,599,133
- Issue date Jul 29, 2003
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of crystal growth and resulted structures
- Patent number 6,579,359
- Issue date Jun 17, 2003
- Technologies and Devices International, Inc.
- Marina Mynbaeva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating bulk AlGaN single crystals
- Patent number 6,576,054
- Issue date Jun 10, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of epitaxially growing device structures with sharp layer in...
- Patent number 6,573,164
- Issue date Jun 3, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing GaN ingots
- Patent number 6,562,124
- Issue date May 13, 2003
- Technologies and Devices International, Inc.
- Vladimir Ivantzov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-n heterojunction-based structures utilizing HVPE grown III-V comp...
- Patent number 6,559,467
- Issue date May 6, 2003
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for growing p-n heterojunction-based structures utilizing HV...
- Patent number 6,559,038
- Issue date May 6, 2003
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for growing p-type III-V compound material utilizing HVPE te...
- Patent number 6,555,452
- Issue date Apr 29, 2003
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20120076968
- Publication date Mar 29, 2012
- Freiberger Compound Materials GmbH
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20110114015
- Publication date May 19, 2011
- Freiberger Compound Materials GmbH
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20090286063
- Publication date Nov 19, 2009
- Freiberger Compound Materials GmbH
- Vladimir Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...
- Publication number 20090286331
- Publication date Nov 19, 2009
- Freiberger Compound Materials GmbH
- Vladimir Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GaN AND AlGaN SINGLE CRYSTALS
- Publication number 20090148984
- Publication date Jun 11, 2009
- Yuri V. MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...
- Publication number 20090130781
- Publication date May 21, 2009
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20090092815
- Publication date Apr 9, 2009
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES
- Publication number 20090050913
- Publication date Feb 26, 2009
- Freiberger Compound Materials GmbH
- Yuri MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GaN AND AlGaN SINGLE CRYSTALS
- Publication number 20080257256
- Publication date Oct 23, 2008
- Yuri V. MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20080022926
- Publication date Jan 31, 2008
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for simultaneously producing multiple wafers during a single...
- Publication number 20070032046
- Publication date Feb 8, 2007
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for fabricating crack-free group III nitride s...
- Publication number 20060280668
- Publication date Dec 14, 2006
- Technologies & Devices International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
HVPE apparatus for simultaneously producing multiple wafers during...
- Publication number 20060011135
- Publication date Jan 19, 2006
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AIGaN single crystals
- Publication number 20050244997
- Publication date Nov 3, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for achieving low defect density AlGaN single crystal boules
- Publication number 20050212001
- Publication date Sep 29, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20050164044
- Publication date Jul 28, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for fabricating crack-free Group III nitride s...
- Publication number 20050142391
- Publication date Jun 30, 2005
- Technologies & Devices International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Reactor for extended duration growth of gallium containing single c...
- Publication number 20050056222
- Publication date Mar 17, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing methods for semiconductor devices with multiple III-V...
- Publication number 20040137657
- Publication date Jul 15, 2004
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V compound semiconductor device with an AIxByInzGa1-x-y-zN1-a-b...
- Publication number 20040026704
- Publication date Feb 12, 2004
- Technologies & Devices Int.'s Inc.
- Audrey E. Nikolaev
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20030226496
- Publication date Dec 11, 2003
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20030221619
- Publication date Dec 4, 2003
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGAN SINGLE CRYSTAL BOULES
- Publication number 20030205193
- Publication date Nov 6, 2003
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating a P-N heterojunction device utilizing HVPE g...
- Publication number 20030049898
- Publication date Mar 13, 2003
- Sergey Karpov
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of epitaxially growing submicron group III nitride layers ut...
- Publication number 20020177312
- Publication date Nov 28, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for epitaxially for growing semiconductor device structur...
- Publication number 20020174833
- Publication date Nov 28, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for epitaxially growing semiconductor device structures w...
- Publication number 20020155713
- Publication date Oct 24, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of epitaxially growing device structures with sharp layer in...
- Publication number 20020155683
- Publication date Oct 24, 2002
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of epitaxially growing device structures with submicron grou...
- Publication number 20020152951
- Publication date Oct 24, 2002
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
P-n heterojunction-based structures utilizing HVPE grown III-V comp...
- Publication number 20020053679
- Publication date May 9, 2002
- Audrey E. Nikolaev
- B82 - NANO-TECHNOLOGY

Vladimir A. Dmitriev

Person

Patents Grantslast 30 patents

HVPE apparatus and methods for growing indium nitride and indium ni...

Apparatus and methods for controlling gas flows in a HVPE reactor

HVPE apparatus and methods for growth of p-type single crystal grou...

Bulk GaN and AlGaN single crystals

Bulk GaN and AlGaN single crystals

Method and apparatus for fabricating crack-free Group III nitride s...

HVPE apparatus and methods for growth of indium containing material...

Apparatus for epitaxially growing semiconductor device structures w...

Reactor for extended duration growth of gallium containing single c...

Method for achieving low defect density AlGaN single crystal boules

Method and apparatus for fabricating crack-free Group III nitride s...

Reactor for extended duration growth of gallium containing single c...

Manufacturing methods for semiconductor devices with multiple III-V...

Bulk GaN and ALGaN single crystals

Method for fabricating a P-N heterojunction device utilizing HVPE g...

III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-b...

Apparatus for epitaxially growing semiconductor device structures w...

Method of epitaxially growing device structures with submicron grou...

Reactor for extended duration growth of gallium containing single c...

Method of epitaxially growing submicron group III nitride layers ut...

Method for achieving low defect density GaN single crystal boules

Method for fabricating bulk GaN single crystals

Method for growing III-V compound semiconductor structures with an...

Method of crystal growth and resulted structures

Method for fabricating bulk AlGaN single crystals

Method of epitaxially growing device structures with sharp layer in...

Method of manufacturing GaN ingots

P-n heterojunction-based structures utilizing HVPE grown III-V comp...

Method for growing p-n heterojunction-based structures utilizing HV...

Method for growing p-type III-V compound material utilizing HVPE te...

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...

BULK GaN AND AlGaN SINGLE CRYSTALS

METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES

BULK GaN AND AlGaN SINGLE CRYSTALS

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

Method for simultaneously producing multiple wafers during a single...

Method and apparatus for fabricating crack-free group III nitride s...

HVPE apparatus for simultaneously producing multiple wafers during...

Bulk GaN and AIGaN single crystals

Method for achieving low defect density AlGaN single crystal boules

Bulk GaN and AlGaN single crystals

Method and apparatus for fabricating crack-free Group III nitride s...

Reactor for extended duration growth of gallium containing single c...

Manufacturing methods for semiconductor devices with multiple III-V...

III-V compound semiconductor device with an AIxByInzGa1-x-y-zN1-a-b...

Bulk GaN and AlGaN single crystals

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGAN SINGLE CRYSTAL BOULES

Method for fabricating a P-N heterojunction device utilizing HVPE g...

Method of epitaxially growing submicron group III nitride layers ut...

Apparatus for epitaxially for growing semiconductor device structur...

Apparatus for epitaxially growing semiconductor device structures w...

Method of epitaxially growing device structures with sharp layer in...

Method of epitaxially growing device structures with submicron grou...

P-n heterojunction-based structures utilizing HVPE grown III-V comp...