Vladimir Machkaoutsan

Person

Wezemaal, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Methods used in forming a memory array comprising strings of memory...
- Patent number 11,094,627
- Issue date Aug 17, 2021
- Micron Technology, Inc.
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a multi-level interconnect structure in a semicon...
- Patent number 11,088,070
- Issue date Aug 10, 2021
- Imec VZW
- Basoene Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for passivating dielectric films
- Patent number 10,513,772
- Issue date Dec 24, 2019
- ASM International N.V.
- Tom E. Blomberg
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure and device formed using selective epitaxial...
- Patent number 10,361,201
- Issue date Jul 23, 2019
- ASM IP Holding B.V.
- Qi Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective fin cut
- Patent number 10,186,459
- Issue date Jan 22, 2019
- Imec VZW
- Roel Gronheid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire device with reduced parasitics
- Patent number 10,157,992
- Issue date Dec 18, 2018
- QUALCOMM Incorporated
- Mustafa Badaroglu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having a gap defined therein
- Patent number 10,079,293
- Issue date Sep 18, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked nanowire field effect transistors
- Patent number 10,043,796
- Issue date Aug 7, 2018
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire channel structures of continuously stacked nanowires for c...
- Patent number 10,032,678
- Issue date Jul 24, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact wrap around structure
- Patent number 9,953,979
- Issue date Apr 24, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gap defined therein
- Patent number 9,871,121
- Issue date Jan 16, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjacent device isolation
- Patent number 9,824,936
- Issue date Nov 21, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned structure
- Patent number 9,799,560
- Issue date Oct 24, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal cut and via for back-end-of-line (BEOL) processe...
- Patent number 9,793,164
- Issue date Oct 17, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,728,718
- Issue date Aug 8, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silane and borane treatments for titanium carbide films
- Patent number 9,583,348
- Issue date Feb 28, 2017
- ASM IP Holding B.V.
- Jerry Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,570,509
- Issue date Feb 14, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for source-drain junction formation in a FinFE...
- Patent number 9,564,518
- Issue date Feb 7, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a wire-based semiconductor device
- Patent number 9,553,148
- Issue date Jan 24, 2017
- ASM IP Holding B.V.
- Qi Xie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Adjacent device isolation
- Patent number 9,502,414
- Issue date Nov 22, 2016
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-fin device isolation
- Patent number 9,496,181
- Issue date Nov 15, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a resistive random access memory device with metal...
- Patent number 9,385,164
- Issue date Jul 5, 2016
- ASM IP Holding B.V.
- Qi Xie
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon germanium FinFET formation by Ge condensation
- Patent number 9,257,556
- Issue date Feb 9, 2016
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and device and methods of forming same usin...
- Patent number 9,240,412
- Issue date Jan 19, 2016
- ASM IP Holding B.V.
- Qi Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silane and borane treatments for titanium carbide films
- Patent number 9,236,247
- Issue date Jan 12, 2016
- ASM IP Holding B.V.
- Jerry Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for depositing electrode with high effective work function
- Patent number 9,136,180
- Issue date Sep 15, 2015
- ASM IP Holding B.V.
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a wire-based semiconductor device
- Patent number 9,012,278
- Issue date Apr 21, 2015
- ASM IP Holding B.V.
- Qi Xie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a resistive random access memory device
- Patent number 8,956,939
- Issue date Feb 17, 2015
- ASM IP Holding B.V.
- Qi Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silane and borane treatments for titanium carbide films
- Patent number 8,841,182
- Issue date Sep 23, 2014
- ASM IP Holding B.V.
- Jerry Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable silicide films and methods for making the same
- Patent number 8,367,548
- Issue date Feb 5, 2013
- ASM America, Inc.
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY ARRAYS COMPRISING OPERATIVE CHANNEL-MATERIAL STRINGS AND DUM...
- Publication number 20240321727
- Publication date Sep 26, 2024
- Lodestar Licensing Group LLC
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Operative Channel-Material Strings And Dum...
- Publication number 20210343640
- Publication date Nov 4, 2021
- Micron Technology, Inc.
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays And Methods Used In Forming A Memory Array Comprising...
- Publication number 20210125919
- Publication date Apr 29, 2021
- Micron Technology, Inc.
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A MULTI-LEVEL INTERCONNECT STRUCTURE IN A SEMICON...
- Publication number 20210028106
- Publication date Jan 28, 2021
- IMEC vzw
- Basoene Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PASSIVATING DIELECTRIC FILMS
- Publication number 20200181769
- Publication date Jun 11, 2020
- ASM INTERNATIONAL N.V.
- Tom E. Blomberg
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Gate, Contact, and Fin Cut Method
- Publication number 20200083116
- Publication date Mar 12, 2020
- IMEC vzw
- Steven Demuynck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE DEVICE WITH REDUCED PARASITICS
- Publication number 20190067435
- Publication date Feb 28, 2019
- QUALCOMM Incorporated
- Mustafa Badaroglu
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN
- Publication number 20180114848
- Publication date Apr 26, 2018
- Qualcomm Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Fin Cut
- Publication number 20180076092
- Publication date Mar 15, 2018
- IMEC vzw
- Roel Gronheid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN WITH AN EPITAXIAL CLADDING LAYER
- Publication number 20170236841
- Publication date Aug 17, 2017
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS
- Publication number 20170221884
- Publication date Aug 3, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE DEVICE WITH REDUCED PARASITICS
- Publication number 20170186846
- Publication date Jun 29, 2017
- QUALCOMM Incorporated
- Mustafa Badaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS
- Publication number 20170154778
- Publication date Jun 1, 2017
- ASM IP HOLDING B.V.
- Jerry Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METAL CUT AND VIA FOR BACK-END-OF-LINE (BEOL) PROCESSE...
- Publication number 20170140986
- Publication date May 18, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED NANOWIRES FOR C...
- Publication number 20170110374
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED HETEROGENEOUS N...
- Publication number 20170110541
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR SOURCE-DRAIN JUNCTION FORMATION IN A FINFE...
- Publication number 20170104088
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20170104153
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJACENT DEVICE ISOLATION
- Publication number 20170033020
- Publication date Feb 2, 2017
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STRUCTURE
- Publication number 20160293485
- Publication date Oct 6, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJACENT DEVICE ISOLATION
- Publication number 20160254261
- Publication date Sep 1, 2016
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20160225817
- Publication date Aug 4, 2016
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS
- Publication number 20160196977
- Publication date Jul 7, 2016
- ASM IP HOLDING B.V.
- Jerry Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-FIN DEVICE ISOLATION
- Publication number 20160181161
- Publication date Jun 23, 2016
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT WRAP AROUND STRUCTURE
- Publication number 20160148936
- Publication date May 26, 2016
- QUALCOMM Incorporated
- Jeffrey Junhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND DEVICE AND METHODS OF FORMING SAME USIN...
- Publication number 20160133628
- Publication date May 12, 2016
- ASM IP HOLDING B.V.
- Qi Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATIS FOR SOURCE-DRAIN JUNCTION FORMATION FINFET WIT...
- Publication number 20160087070
- Publication date Mar 24, 2016
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING CAVITY AND SELF-ALIGNED CONTACT AND METHOD OF FABR...
- Publication number 20160049487
- Publication date Feb 18, 2016
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN
- Publication number 20150255571
- Publication date Sep 10, 2015
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A WIRE-BASED SEMICONDUCTOR DEVICE
- Publication number 20150214301
- Publication date Jul 30, 2015
- ASM IP HOLDING B.V.
- Qi Xie
- H01 - BASIC ELECTRIC ELEMENTS

Vladimir Machkaoutsan

Person

Patents Grantslast 30 patents

Methods used in forming a memory array comprising strings of memory...

Method of forming a multi-level interconnect structure in a semicon...

Process for passivating dielectric films

Semiconductor structure and device formed using selective epitaxial...

Selective fin cut

Nanowire device with reduced parasitics

Semiconductor device having a gap defined therein

Vertically stacked nanowire field effect transistors

Nanowire channel structures of continuously stacked nanowires for c...

Contact wrap around structure

Semiconductor device having a gap defined therein

Adjacent device isolation

Self-aligned structure

Self-aligned metal cut and via for back-end-of-line (BEOL) processe...

Magnetic tunnel junction (MTJ) device array

Silane and borane treatments for titanium carbide films

Magnetic tunnel junction (MTJ) device array

Method and apparatus for source-drain junction formation in a FinFE...

Method of making a wire-based semiconductor device

Adjacent device isolation

Sub-fin device isolation

Method of making a resistive random access memory device with metal...

Silicon germanium FinFET formation by Ge condensation

Semiconductor structure and device and methods of forming same usin...

Silane and borane treatments for titanium carbide films

Process for depositing electrode with high effective work function

Method of making a wire-based semiconductor device

Method of making a resistive random access memory device

Silane and borane treatments for titanium carbide films

Stable silicide films and methods for making the same

Patents Applicationslast 30 patents

MEMORY ARRAYS COMPRISING OPERATIVE CHANNEL-MATERIAL STRINGS AND DUM...

Memory Arrays Comprising Operative Channel-Material Strings And Dum...

Memory Arrays And Methods Used In Forming A Memory Array Comprising...

METHOD OF FORMING A MULTI-LEVEL INTERCONNECT STRUCTURE IN A SEMICON...

PROCESS FOR PASSIVATING DIELECTRIC FILMS

Gate, Contact, and Fin Cut Method

NANOWIRE DEVICE WITH REDUCED PARASITICS

SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN

Selective Fin Cut

FIN WITH AN EPITAXIAL CLADDING LAYER

VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS

NANOWIRE DEVICE WITH REDUCED PARASITICS

SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS

SELF-ALIGNED METAL CUT AND VIA FOR BACK-END-OF-LINE (BEOL) PROCESSE...

NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED NANOWIRES FOR C...

NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED HETEROGENEOUS N...

METHOD AND APPARATUS FOR SOURCE-DRAIN JUNCTION FORMATION IN A FINFE...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

ADJACENT DEVICE ISOLATION

SELF-ALIGNED STRUCTURE

ADJACENT DEVICE ISOLATION

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS

SUB-FIN DEVICE ISOLATION

CONTACT WRAP AROUND STRUCTURE

SEMICONDUCTOR STRUCTURE AND DEVICE AND METHODS OF FORMING SAME USIN...

METHOD AND APPARATIS FOR SOURCE-DRAIN JUNCTION FORMATION FINFET WIT...

DEVICE INCLUDING CAVITY AND SELF-ALIGNED CONTACT AND METHOD OF FABR...

SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN

METHOD OF MAKING A WIRE-BASED SEMICONDUCTOR DEVICE