Vladimir Rumennik

Person

Los Altos Hills, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,828,631
- Issue date Dec 7, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,800,903
- Issue date Oct 5, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high-voltage transistor with buried conduction r...
- Patent number 6,787,437
- Issue date Sep 7, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,777,749
- Issue date Aug 17, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,768,172
- Issue date Jul 27, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high-voltage transistor with buried conduction r...
- Patent number 6,724,041
- Issue date Apr 20, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,633,065
- Issue date Oct 14, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High current field-effect transistor
- Patent number 6,600,182
- Issue date Jul 29, 2003
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,570,219
- Issue date May 27, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with multi-layer conduction region
- Patent number 6,207,994
- Issue date Mar 27, 2001
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high-voltage transistor with multiple lateral co...
- Patent number 6,168,983
- Issue date Jan 2, 2001
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-directional power trench MOS field effect transistor having low...
- Patent number 5,430,315
- Issue date Jul 4, 1995
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high voltage transistor
- Patent number 5,411,901
- Issue date May 2, 1995
- Power Integrations, Inc.
- Wayne B. Grabowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-directional MOSFET switch
- Patent number 5,323,044
- Issue date Jun 21, 1994
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor
- Patent number 5,274,259
- Issue date Dec 28, 1993
- Power Integrations, Inc.
- Wayne B. Grabowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow radius tips for high voltage semiconductor devices with inte...
- Patent number 5,258,636
- Issue date Nov 2, 1993
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plural polygon source pattern for mosfet
- Patent number 5,130,767
- Issue date Jul 14, 1992
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS gated bipolar transistor
- Patent number 5,072,268
- Issue date Dec 10, 1991
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plural polygon source pattern for MOSFET
- Patent number 5,008,725
- Issue date Apr 16, 1991
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-on enhancement mode MOSFET with negative threshold gating
- Patent number 4,409,607
- Issue date Oct 11, 1983
- Xerox Corporation
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast recovery diode with very thin base
- Patent number 4,220,963
- Issue date Sep 2, 1980
- International Rectifier Corporation
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20040217419
- Publication date Nov 4, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH MULTI-LAYER CONDUCTION REGION
- Publication number 20040207012
- Publication date Oct 21, 2004
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20030151093
- Publication date Aug 14, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20030151101
- Publication date Aug 14, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High current field-effect transistor
- Publication number 20030057459
- Publication date Mar 27, 2003
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a high-voltage transistor with buried conduction r...
- Publication number 20030042541
- Publication date Mar 6, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20030025155
- Publication date Feb 6, 2003
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A HIGH-VOLTAGE TRANSISTOR WITH BURIED CONDUCTION R...
- Publication number 20020153556
- Publication date Oct 24, 2002
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20020053698
- Publication date May 9, 2002
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage transistor with multi-layer conduction region
- Publication number 20020050613
- Publication date May 2, 2002
- Power Integrations, Inc.
- Vladimir Rumennik
- H01 - BASIC ELECTRIC ELEMENTS

Vladimir Rumennik

Person

Patents Grantslast 30 patents

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

Method of making a high-voltage transistor with buried conduction r...

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

Method of making a high-voltage transistor with buried conduction r...

High-voltage transistor with multi-layer conduction region

High current field-effect transistor

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

Method of making a high-voltage transistor with multiple lateral co...

Bi-directional power trench MOS field effect transistor having low...

Method of making high voltage transistor

Bi-directional MOSFET switch

High voltage transistor

Narrow radius tips for high voltage semiconductor devices with inte...

Plural polygon source pattern for mosfet

MOS gated bipolar transistor

Plural polygon source pattern for MOSFET

Normally-on enhancement mode MOSFET with negative threshold gating

Fast recovery diode with very thin base

Patents Applicationslast 30 patents

High-voltage transistor with multi-layer conduction region

HIGH-VOLTAGE TRANSISTOR WITH MULTI-LAYER CONDUCTION REGION

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region

High current field-effect transistor

Method of making a high-voltage transistor with buried conduction r...

High-voltage transistor with multi-layer conduction region

METHOD OF MAKING A HIGH-VOLTAGE TRANSISTOR WITH BURIED CONDUCTION R...

High-voltage transistor with multi-layer conduction region

High-voltage transistor with multi-layer conduction region