Vladimir Tsukanov

Person

Mountain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate driver for switching converter having body diode power loss mi...
- Patent number 10,439,483
- Issue date Oct 8, 2019
- Littelfuse, Inc.
- Anatoliy V. Tsyrganovich
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gate driver for switching converter having body diode power loss mi...
- Patent number 10,090,751
- Issue date Oct 2, 2018
- IXYS, LLC
- Anatoliy V. Tsyrganovich
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Trench IGBT with tub-shaped floating P-well and hole drains to P-bo...
- Patent number 9,627,521
- Issue date Apr 18, 2017
- IXYS Corporation
- Vladimir Tsukanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench IGBT with tub-shaped floating P-well and hole drains to P-bo...
- Patent number 9,419,118
- Issue date Aug 16, 2016
- IXYS Corporation
- Vladimir Tsukanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and IGBT fabrication process with two fewer p...
- Patent number 8,900,943
- Issue date Dec 2, 2014
- IXYS Corporation
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and IGBT fabrication process with two fewer p...
- Patent number 8,741,709
- Issue date Jun 3, 2014
- IXYS Corporation
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 8,344,480
- Issue date Jan 1, 2013
- IXYS Corporation
- Kyoung-Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rugged and fast power MOSFET and IGBT
- Patent number RE42864
- Issue date Oct 25, 2011
- IXYS Corporation
- Vladimir Tsukanov
- 257 - Active solid-state devices
Information Patent Grant
Non-uniform power semiconductor and method for making non-uniform p...
- Patent number 7,157,338
- Issue date Jan 2, 2007
- IXYS Corporation
- Nathan Zommer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench power MOSFET and IGBT
- Patent number 7,063,975
- Issue date Jun 20, 2006
- IXYS Corporation
- Vladimir Tsukanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform power semiconductor device
- Patent number 6,710,405
- Issue date Mar 23, 2004
- IXYS Corporation
- Nathan Zommer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rugged and fast power MOSFET and IGBT
- Patent number 6,683,344
- Issue date Jan 27, 2004
- IXYS Corporation
- Vladimir Tsukanov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Gate Driver For Switching Converter Having Body Diode Power Loss Mi...
- Publication number 20190260281
- Publication date Aug 22, 2019
- LITTELFUSE, INC.
- Anatoliy V. Tsyrganovich
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Trench IGBT with Tub-Shaped Floating P-Well and Hole Drains to P-Bo...
- Publication number 20170125559
- Publication date May 4, 2017
- IXYS Corporation
- Vladimir Tsukanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power MOSFET And IGBT Fabrication Process With Two Fewer P...
- Publication number 20140273357
- Publication date Sep 18, 2014
- IXYS Corporation
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power MOSFET and IGBT Fabrication Process with Two Fewer P...
- Publication number 20110312137
- Publication date Dec 22, 2011
- IXYS Corporation
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20100078674
- Publication date Apr 1, 2010
- IXYS Corporation
- Kyoung-Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-uniform power semiconductor and method for making
- Publication number 20040232484
- Publication date Nov 25, 2004
- IXYS CORPORATION
- Nathan Zommer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench power MOSFET and IGBT
- Publication number 20040124489
- Publication date Jul 1, 2004
- IXYS CORPORATION
- Vladimir Tsukanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rugged and fast power mosfet and IGBT
- Publication number 20030067034
- Publication date Apr 10, 2003
- IXYS CORPORATION
- Vladimir Tsukanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-uniform power semiconductor and method for making
- Publication number 20020093033
- Publication date Jul 18, 2002
- Nathan Zommer
- H01 - BASIC ELECTRIC ELEMENTS

Vladimir Tsukanov

Person

Patents Grantslast 30 patents

Gate driver for switching converter having body diode power loss mi...

Gate driver for switching converter having body diode power loss mi...

Trench IGBT with tub-shaped floating P-well and hole drains to P-bo...

Trench IGBT with tub-shaped floating P-well and hole drains to P-bo...

Vertical power MOSFET and IGBT fabrication process with two fewer p...

Vertical power MOSFET and IGBT fabrication process with two fewer p...

Insulated gate bipolar transistor

Rugged and fast power MOSFET and IGBT

Non-uniform power semiconductor and method for making non-uniform p...

Shallow trench power MOSFET and IGBT

Non-uniform power semiconductor device

Rugged and fast power MOSFET and IGBT

Patents Applicationslast 30 patents

Gate Driver For Switching Converter Having Body Diode Power Loss Mi...

Trench IGBT with Tub-Shaped Floating P-Well and Hole Drains to P-Bo...

Vertical Power MOSFET And IGBT Fabrication Process With Two Fewer P...

Vertical Power MOSFET and IGBT Fabrication Process with Two Fewer P...

INSULATED GATE BIPOLAR TRANSISTOR

Non-uniform power semiconductor and method for making

Shallow trench power MOSFET and IGBT

Rugged and fast power mosfet and IGBT

Non-uniform power semiconductor and method for making