Vladimir V. Voronkov

Person

Merano, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 11,764,071
- Issue date Sep 19, 2023
- GlobalWafers Co., Ltd.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 11,282,715
- Issue date Mar 22, 2022
- GlobalWafers Co., Ltd.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 11,276,583
- Issue date Mar 15, 2022
- GlobalWafers Co., Ltd.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 11,276,582
- Issue date Mar 15, 2022
- GlobalWafers Co., Ltd.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stressing semiconductor substrates
- Patent number 10,361,097
- Issue date Jul 23, 2019
- GlobalWafers Co., Ltd.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen precipitation in heavily doped silicon wafers sliced from in...
- Patent number 9,634,098
- Issue date Apr 25, 2017
- SunEdison Semiconductor Ltd. (UEN201334164H)
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processes and apparatus for preparing heterostructures with reduced...
- Patent number 9,583,363
- Issue date Feb 28, 2017
- SunEdison Semiconductor Limited (UEN201334164H)
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Processes and apparatus for preparing heterostructures with reduced...
- Patent number 9,583,364
- Issue date Feb 28, 2017
- SunEdison Semiconductor Limited (UEN201334164H)
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafers with suppressed minority carrier lifetime degradation
- Patent number 9,142,616
- Issue date Sep 22, 2015
- SunEdison, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of high precipitate density wafers by activation of inac...
- Patent number 9,129,919
- Issue date Sep 8, 2015
- SunEdison Semiconductor Limited
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Processes for suppressing minority carrier lifetime degradation in...
- Patent number 8,969,119
- Issue date Mar 3, 2015
- MEMC Singapore Pte. Ltd. (UEN200614794D)
- Robert J. Falster
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Arsenic and phosphorus doped silicon wafer substrates having intrin...
- Patent number 8,026,145
- Issue date Sep 27, 2011
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity silicon structure and a process for the preparatio...
- Patent number 7,521,382
- Issue date Apr 21, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic and phosphorus doped silicon wafer substrates having intrin...
- Patent number 7,485,928
- Issue date Feb 3, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing single crystal silicon having improved gate o...
- Patent number 7,431,765
- Issue date Oct 7, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for the production of low defect density silicon
- Patent number 7,105,050
- Issue date Sep 12, 2006
- MEMC Electronic Materials, Inc.
- Vladimir V. Voronkov
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Single crystal silicon having improved gate oxide integrity
- Patent number 6,986,925
- Issue date Jan 17, 2006
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for preparing a stabilized ideal oxygen precipitating silic...
- Patent number 6,955,718
- Issue date Oct 18, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Analytical method to measure nitrogen concentration in single cryst...
- Patent number 6,803,576
- Issue date Oct 12, 2004
- MEMC Electronic Materials, SpA
- Maria Giovanna Pretto
- G01 - MEASURING TESTING
Information Patent Grant
Process for preparing low defect density silicon using high growth...
- Patent number 6,689,209
- Issue date Feb 10, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Process for growing a silicon crystal segment substantially free fr...
- Patent number 6,652,646
- Issue date Nov 25, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for growing silicon crystals which allows for variability i...
- Patent number 6,500,255
- Issue date Dec 31, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20190333778
- Publication date Oct 31, 2019
- GLOBALWAFERS CO., LTD.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20190311913
- Publication date Oct 10, 2019
- GLOBALWAFERS CO., LTD.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20190311912
- Publication date Oct 10, 2019
- GLOBALWAFERS CO., LTD.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20190295853
- Publication date Sep 26, 2019
- GLOBALWAFERS CO., LTD.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFERS WITH SUPPRESSED MINORITY CARRIER LIFETIME DEGRADATION
- Publication number 20150123248
- Publication date May 7, 2015
- SunEdison Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN PRECIPITATION IN HEAVILY DOPED SILICON WAFERS SLICED FROM IN...
- Publication number 20140361408
- Publication date Dec 11, 2014
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processes and Apparatus for Preparing Heterostructures with Reduced...
- Publication number 20140187022
- Publication date Jul 3, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Processes and Apparatus for Preparing Heterostructures with Reduced...
- Publication number 20140187023
- Publication date Jul 3, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for Stressing Semiconductor Substrates
- Publication number 20140182788
- Publication date Jul 3, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INAC...
- Publication number 20140141537
- Publication date May 22, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESSES FOR SUPPRESSING MINORITY CARRIER LIFETIME DEGRADATION IN...
- Publication number 20130102129
- Publication date Apr 25, 2013
- MEMC SINGAPORE PTE. LTD. (UEN200614794D)
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...
- Publication number 20110250739
- Publication date Oct 13, 2011
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...
- Publication number 20090252974
- Publication date Oct 8, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRIN...
- Publication number 20090130824
- Publication date May 21, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY
- Publication number 20090022930
- Publication date Jan 22, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Diffusion Control in Heavily Doped Substrates
- Publication number 20090004458
- Publication date Jan 1, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Arsenic and phosphorus doped silicon wafer substrates having intrin...
- Publication number 20070105279
- Publication date May 10, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
High resistivity silicon structure and a process for the preparatio...
- Publication number 20060263967
- Publication date Nov 23, 2006
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing single crystal silicon having improved gate o...
- Publication number 20050160967
- Publication date Jul 28, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing a stabilized ideal oxygen precipitating silic...
- Publication number 20050005841
- Publication date Jan 13, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for suppressing the nucleation and/or growth of interstitia...
- Publication number 20030196587
- Publication date Oct 23, 2003
- MEMC Electronic Materials, Inc.
- Kirk D. McCallum
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing defect free silicon crystals which allows for...
- Publication number 20030116081
- Publication date Jun 26, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Analytical method to measure nitrogen concentration in single cryst...
- Publication number 20030068826
- Publication date Apr 10, 2003
- Maria Giovanna Pretto
- G01 - MEASURING TESTING
Information Patent Application
Process for preparing single crystal silicon having improved gate o...
- Publication number 20020121238
- Publication date Sep 5, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for the production of low defect density silicon
- Publication number 20020056410
- Publication date May 16, 2002
- MEMC Electronic Materials, Inc.
- Vladimir V. Voronkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing low defect density silicon using high growth...
- Publication number 20020053315
- Publication date May 9, 2002
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for controlling growth of a silicon crystal to minimize grow...
- Publication number 20020043206
- Publication date Apr 18, 2002
- MEMC Electronic Materials,Inc.
- Paolo Mutti
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing defect free silicon crystals which allows for...
- Publication number 20010027743
- Publication date Oct 11, 2001
- Robert J. Falster
- C30 - CRYSTAL GROWTH

Vladimir V. Voronkov

Person

Patents Grantslast 30 patents

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

Oxygen precipitation in heavily doped silicon wafers sliced from in...

Processes and apparatus for preparing heterostructures with reduced...

Processes and apparatus for preparing heterostructures with reduced...

Silicon wafers with suppressed minority carrier lifetime degradation

Production of high precipitate density wafers by activation of inac...

Processes for suppressing minority carrier lifetime degradation in...

Arsenic and phosphorus doped silicon wafer substrates having intrin...

High resistivity silicon structure and a process for the preparatio...

Arsenic and phosphorus doped silicon wafer substrates having intrin...

Process for preparing single crystal silicon having improved gate o...

Method for the production of low defect density silicon

Single crystal silicon having improved gate oxide integrity

Process for preparing a stabilized ideal oxygen precipitating silic...

Analytical method to measure nitrogen concentration in single cryst...

Process for preparing low defect density silicon using high growth...

Process for growing a silicon crystal segment substantially free fr...

Process for growing silicon crystals which allows for variability i...

Patents Applicationslast 30 patents

APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES

APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES

APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES

APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES

SILICON WAFERS WITH SUPPRESSED MINORITY CARRIER LIFETIME DEGRADATION

OXYGEN PRECIPITATION IN HEAVILY DOPED SILICON WAFERS SLICED FROM IN...

Processes and Apparatus for Preparing Heterostructures with Reduced...

Processes and Apparatus for Preparing Heterostructures with Reduced...

Apparatus for Stressing Semiconductor Substrates

PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INAC...

PROCESSES FOR SUPPRESSING MINORITY CARRIER LIFETIME DEGRADATION IN...

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...

EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR TH...

ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRIN...

SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY

Diffusion Control in Heavily Doped Substrates

Arsenic and phosphorus doped silicon wafer substrates having intrin...

High resistivity silicon structure and a process for the preparatio...

Process for preparing single crystal silicon having improved gate o...

Process for preparing a stabilized ideal oxygen precipitating silic...

Process for suppressing the nucleation and/or growth of interstitia...

Process for preparing defect free silicon crystals which allows for...

Analytical method to measure nitrogen concentration in single cryst...

Process for preparing single crystal silicon having improved gate o...

Method for the production of low defect density silicon

Process for preparing low defect density silicon using high growth...

Method for controlling growth of a silicon crystal to minimize grow...

Process for preparing defect free silicon crystals which allows for...