Vladimir Zubkov

Person

Moutain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
In situ vapor phase surface activation of SiO2
- Patent number 8,778,816
- Issue date Jul 15, 2014
- Applied Materials, Inc.
- Tatsuya E. Sato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method to increase tensile stress of silicon nitride films using a...
- Patent number 8,753,989
- Issue date Jun 17, 2014
- Applied Materials, Inc.
- Mihaela Balseanu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming flash memory with ultraviolet treatment
- Patent number 8,501,568
- Issue date Aug 6, 2013
- Applied Materials, Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon dioxide layer deposited with BDEAS
- Patent number 8,343,881
- Issue date Jan 1, 2013
- Applied Materials, Inc.
- Yong-Won Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a non-volatile memory having a silicon nitride ch...
- Patent number 8,252,653
- Issue date Aug 28, 2012
- Applied Materials, Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase tensile stress of silicon nitride films using a...
- Patent number 8,129,290
- Issue date Mar 6, 2012
- Applied Materials, Inc.
- Mihaela Balseanu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for creating barriers for copper diffusion
- Patent number 7,829,455
- Issue date Nov 9, 2010
- LSI Corporation
- Vladimir Zubkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming non-volatile memory having charge trap layer with...
- Patent number 7,816,205
- Issue date Oct 19, 2010
- Applied Materials, Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase the compressive stress of PECVD dielectric films
- Patent number 7,790,635
- Issue date Sep 7, 2010
- Applied Materials, Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase the compressive stress of PECVD silicon nitride...
- Patent number 7,732,342
- Issue date Jun 8, 2010
- Applied Materials, Inc.
- Mihaela Balseanu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective copper-silicon-nitride layer formation for an improved di...
- Patent number 7,718,548
- Issue date May 18, 2010
- Applied Materials, Inc.
- Sang M. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for forming a memory structure having an elect...
- Patent number 7,132,336
- Issue date Nov 7, 2006
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating barriers for copper diffusion
- Patent number 7,115,991
- Issue date Oct 3, 2006
- LSI Logic Corporation
- Vladimir Zubkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing thin films
- Patent number 7,081,296
- Issue date Jul 25, 2006
- LSI Logic Corporation
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bimetallic oxide compositions for gate dielectrics
- Patent number 7,015,096
- Issue date Mar 21, 2006
- LSI Logic Corporation
- Vladimir Zubkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dielectric constant fluorine and carbon-containing silicon oxid...
- Patent number 7,015,168
- Issue date Mar 21, 2006
- LSI Logic Corporation
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for creating barrier layers for copper diffusion
- Patent number 6,998,343
- Issue date Feb 14, 2006
- LSI Logic Corporation
- Grace Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having an electron trapping layer in a high-K dielect...
- Patent number 6,989,565
- Issue date Jan 24, 2006
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K dielectric gate material uniquely formed
- Patent number 6,919,263
- Issue date Jul 19, 2005
- LSI Logic Corporation
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for forming a low dielectric constant fluorine and carbon-c...
- Patent number 6,858,195
- Issue date Feb 22, 2005
- LSI Logic Corporation
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of chemically altering a silicon surface and associated elec...
- Patent number 6,822,308
- Issue date Nov 23, 2004
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned alloy capping layers for copper interconnect structures
- Patent number 6,747,358
- Issue date Jun 8, 2004
- LSI Logic Corporation
- Paul Rissman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing thin films
- Patent number 6,743,474
- Issue date Jun 1, 2004
- LSI Logic Corporation
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for reticle formation utilizing metal vaporization
- Patent number 6,673,498
- Issue date Jan 6, 2004
- LSI Logic Corporation
- Sheldon Aronowitz
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Process for forming a low dielectric constant fluorine and carbon-c...
- Patent number 6,649,219
- Issue date Nov 18, 2003
- LSI Logic Corporation
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of chemically altering a silicon surface and associated elec...
- Patent number 6,627,556
- Issue date Sep 30, 2003
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a low dielectric constant fluorine and carbon c...
- Patent number 6,572,925
- Issue date Jun 3, 2003
- LSI Logic Corporation
- Vladimir Zubkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for creating self-aligned alloy capping layers for copper in...
- Patent number 6,566,262
- Issue date May 20, 2003
- LSI Logic Corporation
- Paul Rissman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming high dielectric constant gate dielectric for in...
- Patent number 6,511,925
- Issue date Jan 28, 2003
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LOW TEMPERATURE PROCESS FOR FORMING A LOW DIELECTRIC CONSTANT FLUOR...
- Patent number 6,365,528
- Issue date Apr 2, 2002
- LSI Logic Corporation
- Valeriy Sukharev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
In Situ Vapor Phase Surface Activation Of SiO2
- Publication number 20120202357
- Publication date Aug 9, 2012
- Applied Materials, Inc.
- Tatsuya E. Sato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD TO INCREASE TENSILE STRESS OF SILICON NITRIDE FILMS USING A...
- Publication number 20120196452
- Publication date Aug 2, 2012
- Applied Materials, Inc.
- Mihaela Balseanu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS
- Publication number 20110298099
- Publication date Dec 8, 2011
- Applied Materials, Inc.
- Yong-Won LEE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER
- Publication number 20100096687
- Publication date Apr 22, 2010
- APPLIED MATERIALS, INC.
- Mihaela BALSEANU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY HAVING CHARGE TRAP LAYER WITH COMPOSITIONAL GRA...
- Publication number 20100096688
- Publication date Apr 22, 2010
- APPLIED MATERIALS, INC.
- Mihaela BALSEANU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY WITH TREATED CHARGE TRAP LAYER
- Publication number 20100099247
- Publication date Apr 22, 2010
- Applied Materials Inc.
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE COPPER-SILICON-NITRIDE LAYER FORMATION FOR AN IMPROVED DI...
- Publication number 20080213997
- Publication date Sep 4, 2008
- Applied Materials, Inc.
- Sang M. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INCREASE THE COMPRESSIVE STRESS OF PECVD DIELECTRIC FILMS
- Publication number 20080146007
- Publication date Jun 19, 2008
- Mihaela Balseanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to increase tensile stress of silicon nitride films using a...
- Publication number 20060269693
- Publication date Nov 30, 2006
- Applied Materials, Inc.
- Mihaela Balseanu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method to increase the compressive stress of PECVD silicon nitride...
- Publication number 20060269692
- Publication date Nov 30, 2006
- Applied Materials, Inc. a Delaware Corporation
- Mihaela Balseanu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Memory device having an electron trapping layer in a high-K dielect...
- Publication number 20050258475
- Publication date Nov 24, 2005
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for creating barriers for copper diffusion
- Publication number 20050179138
- Publication date Aug 18, 2005
- LSI Logic Corporation
- Vladimir Zubkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low dielectric constant fluorine and carbon-containing silicon oxid...
- Publication number 20050098856
- Publication date May 12, 2005
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for growing thin films
- Publication number 20040175947
- Publication date Sep 9, 2004
- LSI Logic Corporation
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for creating barriers to metal contamination in silicon oxides
- Publication number 20040121550
- Publication date Jun 24, 2004
- Vladimir Zubkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K dielectric gate material uniquely formed
- Publication number 20040089887
- Publication date May 13, 2004
- LSI Logic Corporation
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of chemically altering a silicon surface and associated elec...
- Publication number 20030235988
- Publication date Dec 25, 2003
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low dielectric constant fluorine and carbon-containing silicon oxid...
- Publication number 20030207750
- Publication date Nov 6, 2003
- Vladimir Zubkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Process for forming a low dielectric constant fluorine and carbon-c...
- Publication number 20020119315
- Publication date Aug 29, 2002
- Sheldon Aronowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Process for forming a low dielectric constant fluorine and carbon-c...
- Publication number 20020117082
- Publication date Aug 29, 2002
- Sheldon Aronowitz
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Process for forming a low dielectric constant fluorine and carbon-c...
- Publication number 20020119326
- Publication date Aug 29, 2002
- Vladimir Zubkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Vladimir Zubkov

Person

Patents Grantslast 30 patents

In situ vapor phase surface activation of SiO2

Method to increase tensile stress of silicon nitride films using a...

Method of forming flash memory with ultraviolet treatment

Silicon dioxide layer deposited with BDEAS

Method of forming a non-volatile memory having a silicon nitride ch...

Method to increase tensile stress of silicon nitride films using a...

Method for creating barriers for copper diffusion

Method of forming non-volatile memory having charge trap layer with...

Method to increase the compressive stress of PECVD dielectric films

Method to increase the compressive stress of PECVD silicon nitride...

Selective copper-silicon-nitride layer formation for an improved di...

Method and apparatus for forming a memory structure having an elect...

Method for creating barriers for copper diffusion

Method for growing thin films

Bimetallic oxide compositions for gate dielectrics

Low dielectric constant fluorine and carbon-containing silicon oxid...

Method for creating barrier layers for copper diffusion

Memory device having an electron trapping layer in a high-K dielect...

High-K dielectric gate material uniquely formed

Process for forming a low dielectric constant fluorine and carbon-c...

Method of chemically altering a silicon surface and associated elec...

Self-aligned alloy capping layers for copper interconnect structures

Method for growing thin films

Method for reticle formation utilizing metal vaporization

Process for forming a low dielectric constant fluorine and carbon-c...

Method of chemically altering a silicon surface and associated elec...

Process for forming a low dielectric constant fluorine and carbon c...

Method for creating self-aligned alloy capping layers for copper in...

Process for forming high dielectric constant gate dielectric for in...

LOW TEMPERATURE PROCESS FOR FORMING A LOW DIELECTRIC CONSTANT FLUOR...

Patents Applicationslast 30 patents

In Situ Vapor Phase Surface Activation Of SiO2

METHOD TO INCREASE TENSILE STRESS OF SILICON NITRIDE FILMS USING A...

SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS

NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER

NON-VOLATILE MEMORY HAVING CHARGE TRAP LAYER WITH COMPOSITIONAL GRA...

FLASH MEMORY WITH TREATED CHARGE TRAP LAYER

SELECTIVE COPPER-SILICON-NITRIDE LAYER FORMATION FOR AN IMPROVED DI...

METHOD TO INCREASE THE COMPRESSIVE STRESS OF PECVD DIELECTRIC FILMS

Method to increase tensile stress of silicon nitride films using a...

Method to increase the compressive stress of PECVD silicon nitride...

Memory device having an electron trapping layer in a high-K dielect...

Method for creating barriers for copper diffusion

Low dielectric constant fluorine and carbon-containing silicon oxid...

Method for growing thin films

Method for creating barriers to metal contamination in silicon oxides

High-K dielectric gate material uniquely formed

Method of chemically altering a silicon surface and associated elec...

Low dielectric constant fluorine and carbon-containing silicon oxid...

Process for forming a low dielectric constant fluorine and carbon-c...

Process for forming a low dielectric constant fluorine and carbon-c...

Process for forming a low dielectric constant fluorine and carbon-c...