Waclaw C. Koscielniak

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
DMOS transistor structure with gate electrode trench for high densi...
- Patent number 6,777,293
- Issue date Aug 17, 2004
- National Semiconductor Corporation
- Waclaw C. Koscielniak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor structure with gate electrode trench for high densi...
- Patent number 6,713,814
- Issue date Mar 30, 2004
- National Semiconductor Corporation
- Waclaw C. Koscielniak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical photodetector with improved photocarrier separation and lo...
- Patent number 6,534,759
- Issue date Mar 18, 2003
- National Semiconductor Corporation
- Waclaw C. Koscielniak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a self-aligned epitaxial base bipolar transistor
- Patent number 6,329,698
- Issue date Dec 11, 2001
- National Semiconductor Corporation
- Waclaw C. Koscielniak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a self-aligned epitaxial base bipolar transistor
- Patent number 6,020,246
- Issue date Feb 1, 2000
- National Semiconductor Corporation
- Waclaw C. Koscielniak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit including filling and plana...
- Patent number 5,911,109
- Issue date Jun 8, 1999
- National Semiconductor Corporation
- Reda R. Razouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with trenches and an oxygen barrier layer
- Patent number 5,581,110
- Issue date Dec 3, 1996
- National Semiconductor Corporation
- Reda R. Razouk
- H01 - BASIC ELECTRIC ELEMENTS

Waclaw C. Koscielniak

Person

Patents Grantslast 30 patents

DMOS transistor structure with gate electrode trench for high densi...

DMOS transistor structure with gate electrode trench for high densi...

Vertical photodetector with improved photocarrier separation and lo...

Forming a self-aligned epitaxial base bipolar transistor

Forming a self-aligned epitaxial base bipolar transistor

Method of forming an integrated circuit including filling and plana...

Integrated circuit with trenches and an oxygen barrier layer