Wade J. Hodge

Person

Bolton, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
- Patent number 8,853,043
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor having intersti...
- Patent number 8,299,500
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Yield improvement in silicon-germanium epitaxial growth
- Patent number 7,413,967
- Issue date Aug 19, 2008
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Yield improvement in silicon-germanium epitaxial growth
- Patent number 7,118,995
- Issue date Oct 10, 2006
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for forming an oxynitride insulating layer on...
- Patent number 6,887,797
- Issue date May 3, 2005
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for forming an oxynitride insulating layer on...
- Patent number 6,436,196
- Issue date Aug 20, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for forming an oxynitride insulating layer on...
- Patent number 6,346,487
- Issue date Feb 12, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20130005108
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20070051980
- Publication date Mar 8, 2007
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH
- Publication number 20060289959
- Publication date Dec 28, 2006
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH
- Publication number 20050260826
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method for forming an oxynitride insulating layer on...
- Publication number 20020182888
- Publication date Dec 5, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS AND METHOD FOR FORMING AN OXYNITRIDE INSULATING LAYER ON...
- Publication number 20020127872
- Publication date Sep 12, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Wade J. Hodge

Person

Patents Grantslast 30 patents

Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)

Silicon germanium heterojunction bipolar transistor having intersti...

Yield improvement in silicon-germanium epitaxial growth

Yield improvement in silicon-germanium epitaxial growth

Apparatus and method for forming an oxynitride insulating layer on...

Apparatus and method for forming an oxynitride insulating layer on...

Apparatus and method for forming an oxynitride insulating layer on...

Patents Applicationslast 30 patents

SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH

YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH

Apparatus and method for forming an oxynitride insulating layer on...

APPARATUS AND METHOD FOR FORMING AN OXYNITRIDE INSULATING LAYER ON...