WAI-MING J. KAN

Person

SAN RAMON, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of high density memory fabrication
- Patent number 9,343,463
- Issue date May 17, 2016
- Headway Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing a magnetic recording transducer using a chemic...
- Patent number 9,196,283
- Issue date Nov 24, 2015
- Western Digital (Fremont), LLC
- Masahiro Osugi
- G11 - INFORMATION STORAGE
Information Patent Grant
Bottom electrode for MRAM device
- Patent number 8,969,982
- Issue date Mar 3, 2015
- Headway Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density spin-transfer torque MRAM process
- Patent number 8,324,698
- Issue date Dec 4, 2012
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to fabricate bottom electrode for MRAM device
- Patent number 8,273,666
- Issue date Sep 25, 2012
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density spin-transfer torque MRAM process
- Patent number 8,183,061
- Issue date May 22, 2012
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods of partial cladded write line to enhance write...
- Patent number 8,169,816
- Issue date May 1, 2012
- MagIC Technologies, Inc.
- Tai Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Use of CMP to contact a MTJ structure without forming a via
- Patent number 8,105,948
- Issue date Jan 31, 2012
- MagIC Technologies, Inc.
- Adam Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high density field induced MRAM process
- Patent number 7,919,407
- Issue date Apr 5, 2011
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density spin-transfer torque MRAM process
- Patent number 7,884,433
- Issue date Feb 8, 2011
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom electrode for MRAM device and method to fabricate it
- Patent number 7,838,436
- Issue date Nov 23, 2010
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of magnetic tunneling junction pattern layout for magnetic r...
- Patent number 7,508,700
- Issue date Mar 24, 2009
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PROVIDING A MAGNETIC RECORDING TRANSDUCER USING A CHEMIC...
- Publication number 20160055865
- Publication date Feb 25, 2016
- WESTERN DIGITAL (FREMONT), LLC
- MASAHIRO OSUGI
- G11 - INFORMATION STORAGE
Information Patent Application
Bottom electrode for MRAM device
- Publication number 20110133300
- Publication date Jun 9, 2011
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density spin-transfer torque MRAM process
- Publication number 20110129946
- Publication date Jun 2, 2011
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of high density memory fabrication
- Publication number 20110073917
- Publication date Mar 31, 2011
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to fabricate bottom electrode for MRAM device
- Publication number 20110076785
- Publication date Mar 31, 2011
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Design and fabrication methods of partial cladded write line to enh...
- Publication number 20110062536
- Publication date Mar 17, 2011
- MagIC Technologies, Inc.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Application
High density spin-transfer torque MRAM process
- Publication number 20100109106
- Publication date May 6, 2010
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of CMP to contact a MTJ structure without forming a via
- Publication number 20090209102
- Publication date Aug 20, 2009
- MagIC Technologies, Inc.
- Adam Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of magnetic tunneling junction pattern layout for magnetic r...
- Publication number 20080225576
- Publication date Sep 18, 2008
- MagIC Technologies, Inc.
- Tom Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bottom electrode for MRAM device and method to fabricate it
- Publication number 20080090307
- Publication date Apr 17, 2008
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS

WAI-MING J. KAN

Person

Patents Grantslast 30 patents

Method of high density memory fabrication

Method for providing a magnetic recording transducer using a chemic...

Bottom electrode for MRAM device

High density spin-transfer torque MRAM process

Process to fabricate bottom electrode for MRAM device

High density spin-transfer torque MRAM process

Fabrication methods of partial cladded write line to enhance write...

Use of CMP to contact a MTJ structure without forming a via

Method of high density field induced MRAM process

High density spin-transfer torque MRAM process

Bottom electrode for MRAM device and method to fabricate it

Method of magnetic tunneling junction pattern layout for magnetic r...

Patents Applicationslast 30 patents

METHOD FOR PROVIDING A MAGNETIC RECORDING TRANSDUCER USING A CHEMIC...

Bottom electrode for MRAM device

High density spin-transfer torque MRAM process

Method of high density memory fabrication

Process to fabricate bottom electrode for MRAM device

Design and fabrication methods of partial cladded write line to enh...

High density spin-transfer torque MRAM process

Use of CMP to contact a MTJ structure without forming a via

Method of magnetic tunneling junction pattern layout for magnetic r...

Bottom electrode for MRAM device and method to fabricate it