Waldemar Walter Kocon

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Anisotropic nitride etch process with high selectivity to oxide and...
- Patent number 6,461,529
- Issue date Oct 8, 2002
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for resist clean up of metal structures on polyimide
- Patent number 6,375,859
- Issue date Apr 23, 2002
- International Business Machines Corporation
- Richard P. Volant
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Reactive ion etch loading measurement technique
- Patent number 6,268,226
- Issue date Jul 31, 2001
- International Business Machines Corporation
- David Angell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned diffused source vertical transistors with stack capaci...
- Patent number 6,077,745
- Issue date Jun 20, 2000
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned diffused source vertical transistors with deep trench...
- Patent number 6,034,389
- Issue date Mar 7, 2000
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
4F-square memory cell having vertical floating-gate transistors wit...
- Patent number 6,033,957
- Issue date Mar 7, 2000
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned diffused source vertical transistors with deep trench...
- Patent number 6,013,548
- Issue date Jan 11, 2000
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned diffused source vertical transistors with stack capaci...
- Patent number 5,929,477
- Issue date Jul 27, 1999
- International Business Machines Corporation
- Stuart McAllister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon sidewall etching
- Patent number 5,895,273
- Issue date Apr 20, 1999
- International Business Machines Corporation
- Stuart M. Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
4F-square memory cell having vertical floating-gate transistors wit...
- Patent number 5,874,760
- Issue date Feb 23, 1999
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycide etching with HCL and chlorine
- Patent number 5,874,363
- Issue date Feb 23, 1999
- Kabushiki Kaisha Toshiba
- Peter D. Hoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making doped polysilicon layers on sidewalls
- Patent number 5,759,920
- Issue date Jun 2, 1998
- International Business Machines Corporation
- Stuart Mcallister Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isotropic silicon etch process that is highly selective to tungsten
- Patent number 5,670,018
- Issue date Sep 23, 1997
- Siemens Aktiengesellschaft
- Elke Eckstein
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for lighting an inductively coupled plasma at low pressure
- Publication number 20020067133
- Publication date Jun 6, 2002
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS

Waldemar Walter Kocon

Person

Patents Grantslast 30 patents

Anisotropic nitride etch process with high selectivity to oxide and...

Process for resist clean up of metal structures on polyimide

Reactive ion etch loading measurement technique

Self-aligned diffused source vertical transistors with stack capaci...

Self-aligned diffused source vertical transistors with deep trench...

4F-square memory cell having vertical floating-gate transistors wit...

Self-aligned diffused source vertical transistors with deep trench...

Self-aligned diffused source vertical transistors with stack capaci...

Silicon sidewall etching

4F-square memory cell having vertical floating-gate transistors wit...

Polycide etching with HCL and chlorine

Process for making doped polysilicon layers on sidewalls

Isotropic silicon etch process that is highly selective to tungsten

Patents Applicationslast 30 patents

Method for lighting an inductively coupled plasma at low pressure