Walter A. Harrison

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 12,034,078
- Issue date Jul 9, 2024
- ACORN SEMI, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 11,804,533
- Issue date Oct 31, 2023
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 11,610,974
- Issue date Mar 21, 2023
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 11,462,643
- Issue date Oct 4, 2022
- ACORN SEMI, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 10,879,366
- Issue date Dec 29, 2020
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 10,833,199
- Issue date Nov 10, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 10,505,047
- Issue date Dec 10, 2019
- ACORN SEMI, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 10,505,005
- Issue date Dec 10, 2019
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 10,170,627
- Issue date Jan 1, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 9,755,038
- Issue date Sep 5, 2017
- Acorn Technologies, Inc.
- Walter A Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 9,484,426
- Issue date Nov 1, 2016
- Acorn Technologies, Inc.
- Walter A Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 9,362,376
- Issue date Jun 7, 2016
- Acorn Technologies, Inc.
- Walter A Harrison
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20240347641
- Publication date Oct 17, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20240030306
- Publication date Jan 25, 2024
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20230207657
- Publication date Jun 29, 2023
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20230006066
- Publication date Jan 5, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20210119009
- Publication date Apr 22, 2021
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20210083123
- Publication date Mar 18, 2021
- Acorn Semi, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20200111883
- Publication date Apr 9, 2020
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20200091347
- Publication date Mar 19, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20190109241
- Publication date Apr 11, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20180145184
- Publication date May 24, 2018
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20170373164
- Publication date Dec 28, 2017
- Acorn Technologies, Inc.
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20160247890
- Publication date Aug 25, 2016
- Acorn Technologies, Inc.
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20160163813
- Publication date Jun 9, 2016
- Acorn Technologies, Inc.
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20140327142
- Publication date Nov 6, 2014
- Walter A Harrison
- H01 - BASIC ELECTRIC ELEMENTS

Walter A. Harrison

Person

Patents Grantslast 30 patents

Nanowire transistor with source and drain induced by electrical con...

Metal contacts to group IV semiconductors by inserting interfacial...

Metal contacts to group IV semiconductors by inserting interfacial...

Nanowire transistor with source and drain induced by electrical con...

Metal contacts to group IV semiconductors by inserting interfacial...

Nanowire transistor with source and drain induced by electrical con...

Nanowire transistor with source and drain induced by electrical con...

Metal contacts to group IV semiconductors by inserting interfacial...

Nanowire transistor with source and drain induced by electrical con...

Metal contacts to group IV semiconductors by inserting interfacial...

Metal contacts to group IV semiconductors by inserting interfacial...

Metal contacts to group IV semiconductors by inserting interfacial...

Patents Applicationslast 30 patents

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...