Walter Contrata

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of making heterojunction bipolar structure having air and im...
- Patent number 5,943,577
- Issue date Aug 24, 1999
- NEC Corporation
- Walter Contrata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Schottky gate field effect transistor with high output characteristic
- Publication number 20020171096
- Publication date Nov 21, 2002
- NEC Corporation
- Akio Wakejima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for production of gate electrode and gate electrode structure
- Publication number 20020025664
- Publication date Feb 28, 2002
- NEC Corporation
- Akio Wakejima
- H01 - BASIC ELECTRIC ELEMENTS