Wan-Yi Kao

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,176,349
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varying temperature anneal for film and structures formed thereby
- Patent number 12,176,206
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxide layer for oxidation resistance and method forming same
- Patent number 12,148,652
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,087,843
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,015,031
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nitrogen-containing low-K gate spacer
- Patent number 11,948,841
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,942,549
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation method of semiconductor device with dielectric isolation...
- Patent number 11,942,329
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,916,132
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device with composite liner for the Fin
- Patent number 11,894,464
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,764,221
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,757,020
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of filling gaps with carbon and nitrogen doped film
- Patent number 11,742,201
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,721,699
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varying temperature anneal for film and structures formed thereby
- Patent number 11,715,637
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-formation mends of dielectric features
- Patent number 11,710,782
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k feature formation processes and structures formed thereby
- Patent number 11,705,327
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment system and method
- Patent number 11,670,500
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k feature formation processes and structures formed thereby
- Patent number 11,640,978
- Issue date May 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,527,653
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,469,229
- Issue date Oct 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,437,492
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxide layer for oxidation resistance and method forming same
- Patent number 11,393,711
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nitrogen-containing layers as oxidation blocking layers
- Patent number 11,355,339
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment to control deposition rate
- Patent number 11,342,177
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure with high plasma resistance for semiconductor devices
- Patent number 11,329,141
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nitrogen-containing low-K gate spacer
- Patent number 11,322,412
- Issue date May 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-formation mends of dielectric features
- Patent number 11,316,034
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-K feature formation processes and structures formed thereby
- Patent number 11,295,948
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nitrogen-containing low-k gate spacer
- Patent number 11,282,749
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON OXIDE LAYER FOR OXIDATION RESISTANCE AND METHOD FORMING SAME
- Publication number 20240387238
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST-FORMATION MENDS OF DIELECTRIC FEATURES
- Publication number 20240387705
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NITROGEN-CONTAINING LAYERS AS OXIDATION BLOCKING LAYERS
- Publication number 20240379350
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240371975
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yi KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICES
- Publication number 20240304628
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240204104
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device with Composite Liner for the Fin
- Publication number 20240178321
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240162333
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Filling Gaps with Carbon and Nitrogen Doped Film
- Publication number 20230360907
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
POST-FORMATION MENDS OF DIELECTRIC FEATURES
- Publication number 20230352568
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-k Feature Formation Processes and Structures Formed Thereby
- Publication number 20230326746
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230326927
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Varying Temperature Anneal for Film and Structures Formed Thereby
- Publication number 20230317448
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-k Feature Formation Processes and Structures Formed Thereby
- Publication number 20230275136
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY FIN STRUCTURES AND METHODS OF FORMING SAME
- Publication number 20230268426
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress Modulation Using STI Capping Layer for Reducing Fin Bending
- Publication number 20230187265
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230163197
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230155006
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230154746
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yi KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230103640
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230035349
- Publication date Feb 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH DIELECTRIC ISOLATION...
- Publication number 20230025396
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yi KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220359729
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220336637
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Oxide Layer for Oxidation Resistance and Method Forming Same
- Publication number 20220336264
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220328659
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yi KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Nitrogen-Containing Layers as Oxidation Blocking Layers
- Publication number 20220301868
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Treatment to Control Deposition Rate
- Publication number 20220277956
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
POST-FORMATION MENDS OF DIELECTRIC FEATURES
- Publication number 20220254901
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Nitrogen-Containing Low-K Gate Spacer
- Publication number 20220246478
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacture

Varying temperature anneal for film and structures formed thereby

Silicon oxide layer for oxidation resistance and method forming same

Semiconductor device and manufacturing method thereof

Semiconductor device and method

Forming nitrogen-containing low-K gate spacer

Semiconductor device and method of manufacture

Formation method of semiconductor device with dielectric isolation...

Semiconductor device and method of manufacture

Fin field-effect transistor device with composite liner for the Fin

Semiconductor device and method of manufacture

Semiconductor device and method

Method of filling gaps with carbon and nitrogen doped film

Semiconductor device and method of manufacture

Varying temperature anneal for film and structures formed thereby

Post-formation mends of dielectric features

Low-k feature formation processes and structures formed thereby

Treatment system and method

Low-k feature formation processes and structures formed thereby

Semiconductor device and method of manufacture

Semiconductor device and method

Semiconductor device and method of manufacture

Silicon oxide layer for oxidation resistance and method forming same

Forming nitrogen-containing layers as oxidation blocking layers

Treatment to control deposition rate

Spacer structure with high plasma resistance for semiconductor devices

Forming nitrogen-containing low-K gate spacer

Post-formation mends of dielectric features

Low-K feature formation processes and structures formed thereby

Forming nitrogen-containing low-k gate spacer

Patents Applicationslast 30 patents

SILICON OXIDE LAYER FOR OXIDATION RESISTANCE AND METHOD FORMING SAME

POST-FORMATION MENDS OF DIELECTRIC FEATURES

FORMING NITROGEN-CONTAINING LAYERS AS OXIDATION BLOCKING LAYERS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHODS OF FORMING SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Fin Field-Effect Transistor Device with Composite Liner for the Fin

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Method of Filling Gaps with Carbon and Nitrogen Doped Film

POST-FORMATION MENDS OF DIELECTRIC FEATURES

Low-k Feature Formation Processes and Structures Formed Thereby

Semiconductor Device and Method of Manufacture

Varying Temperature Anneal for Film and Structures Formed Thereby

Low-k Feature Formation Processes and Structures Formed Thereby

DUMMY FIN STRUCTURES AND METHODS OF FORMING SAME

Stress Modulation Using STI Capping Layer for Reducing Fin Bending

Semiconductor Device and Method of Manufacture

Semiconductor Device and Method

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Semiconductor Device and Method of Manufacture

Semiconductor Device and Method

FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH DIELECTRIC ISOLATION...

Semiconductor Device and Method

Semiconductor Device and Method of Manufacture

Silicon Oxide Layer for Oxidation Resistance and Method Forming Same

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Forming Nitrogen-Containing Layers as Oxidation Blocking Layers

Treatment to Control Deposition Rate

POST-FORMATION MENDS OF DIELECTRIC FEATURES

Forming Nitrogen-Containing Low-K Gate Spacer