Wanbo GENG

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory devices with channel structures having plu...
- Patent number 12,089,405
- Issue date Sep 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Three-dimensional memory devices with channel structures having plu...
- Patent number 12,052,865
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step L-shaped selective epitaxial growth
- Patent number 12,052,866
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 12,035,524
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 11,925,019
- Issue date Mar 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 11,917,823
- Issue date Feb 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Methods for forming three-dimensional memory devices with channel s...
- Patent number 11,877,449
- Issue date Jan 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,751,385
- Issue date Sep 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jiaqian Xue
Information Patent Grant
Three-dimensional NAND memory device with split gates
- Patent number 11,716,847
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for forming the same
- Patent number 11,563,021
- Issue date Jan 24, 2023
- Yangtze Memory Technologies Co., Ltd.
- Bo Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHANNEL STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...
- Publication number 20230276623
- Publication date Aug 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Xiaolong Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...
- Publication number 20220310648
- Publication date Sep 29, 2022
- Yangtze Memory Technologies Co., Ltd.
- Xiaolong Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...
- Publication number 20220149070
- Publication date May 12, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...
- Publication number 20220149069
- Publication date May 12, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT CHANNEL GATES
- Publication number 20220123004
- Publication date Apr 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin LIU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT GATES
- Publication number 20220123012
- Publication date Apr 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...
- Publication number 20220123011
- Publication date Apr 21, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION TH...
- Publication number 20220123013
- Publication date Apr 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...
- Publication number 20220123010
- Publication date Apr 21, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...
- Publication number 20220085055
- Publication date Mar 17, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP L-SHAPED SELECTIVE EPITAXIAL GROWTH
- Publication number 20220028883
- Publication date Jan 27, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wanbo GENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...
- Publication number 20220013536
- Publication date Jan 13, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL S...
- Publication number 20220013537
- Publication date Jan 13, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20210296336
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jiaqian XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210265364
- Publication date Aug 26, 2021
- Yangtze Memory Technologies Co., Ltd.
- Bo HUANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Three-dimensional memory devices with channel structures having plu...

Three-dimensional memory devices with channel structures having plu...

Two-step L-shaped selective epitaxial growth

Channel structures having protruding portions in three-dimensional...

Channel structures having protruding portions in three-dimensional...

Channel structures having protruding portions in three-dimensional...

Methods for forming three-dimensional memory devices with channel s...

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional NAND memory device with split gates

Memory device and method for forming the same

Patents Applicationslast 30 patents

CHANNEL STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...

CHANNEL STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...

CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...

CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...

THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT CHANNEL GATES

THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT GATES

THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION TH...

THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...

CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...

TWO-STEP L-SHAPED SELECTIVE EPITAXIAL GROWTH

THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL STRUCTURES HAVING PLU...

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES WITH CHANNEL S...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICE AND METHOD FOR FORMING THE SAME