WangXiao Quan

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Yongin-si, KR

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure with strain layer
- Patent number 8,350,354
- Issue date Jan 8, 2013
- Samsung Electronics Co., Ltd.
- Seung-hwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with strain layer and method of fabr...
- Patent number 7,863,152
- Issue date Jan 4, 2011
- Samsung Electronics Co., Ltd.
- Seung-hwan Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH STRAIN LAYER AND METHOD OF FABR...
- Publication number 20110062497
- Publication date Mar 17, 2011
- Samsung Electronics Co., Ltd.
- Seung-hwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device structure with strain layer and method of fabr...
- Publication number 20080246092
- Publication date Oct 9, 2008
- Samsung Electronics Co., Ltd.
- Seung-hwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit simulation method considering stress effects
- Publication number 20080216041
- Publication date Sep 4, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Quan Wangxiao
- G06 - COMPUTING CALCULATING COUNTING