Wanli Wang

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Jiangsu, CN

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Patents Grantslast 30 patents

Information Patent Grant
Reverse conduction insulated gate bipolar transistor (IGBT) manufac...
- Patent number 9,666,682
- Issue date May 30, 2017
- CSMC Technologies FAB1 Co., Ltd.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing injection-enhanced insulated-gate bipolar...
- Patent number 9,583,587
- Issue date Feb 28, 2017
- CSMC Technologies Fabi Co., Ltd.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing IGBT
- Patent number 9,553,164
- Issue date Jan 24, 2017
- CSMC Technologies Fab1 Co., Ltd.
- Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REVERSE CONDUCTION INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MANUFAC...
- Publication number 20160372571
- Publication date Dec 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING IGBT
- Publication number 20160372570
- Publication date Dec 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING INJECTION-ENHANCED INSULATED-GATE BIPOLAR...
- Publication number 20160372573
- Publication date Dec 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS