Wanxun HE

Person

Mechanicville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-planar semiconductor device with multiple-head epitaxial struct...
- Patent number 9,793,358
- Issue date Oct 17, 2017
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed N/P-type fin semiconductor structure with epitaxial materials...
- Patent number 9,508,794
- Issue date Nov 29, 2016
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing a surface area of epitaxial structures in a m...
- Patent number 9,275,906
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Product comprised of FinFET devices with single diffusion break iso...
- Patent number 9,263,516
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Product comprised of FinFET devices with single diffusion break iso...
- Patent number 9,171,752
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication method
- Patent number 9,123,772
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES, INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming FinFETs with reduced series resistance
- Patent number 9,087,720
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIFFERENT HEIGHT OF FINS IN SEMICONDUCTOR STRUCTURE
- Publication number 20160315084
- Publication date Oct 27, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASED SURFACE AREA OF EPITAXIAL STRUCTURES IN A MIXED N/P TYPE...
- Publication number 20160155799
- Publication date Jun 2, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCT COMPRISED OF FINFET DEVICES WITH SINGLE DIFFUSION BREAK ISO...
- Publication number 20160049468
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHOD
- Publication number 20150333062
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- XUSHENG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIXED N/P TYPE NON-PLANAR SEMICONDUCTOR STRUCTURE WITH MULTIPLE EPI...
- Publication number 20150318217
- Publication date Nov 5, 2015
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE EPITAXIAL HEAD RAISED SEMICONDUCTOR STRUCTURE AND METHOD O...
- Publication number 20150318351
- Publication date Nov 5, 2015
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHOD
- Publication number 20150093878
- Publication date Apr 2, 2015
- GLOBAL FOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Non-planar semiconductor device with multiple-head epitaxial struct...

Mixed N/P-type fin semiconductor structure with epitaxial materials...

Method for increasing a surface area of epitaxial structures in a m...

Product comprised of FinFET devices with single diffusion break iso...

Product comprised of FinFET devices with single diffusion break iso...

FinFET fabrication method

Methods for forming FinFETs with reduced series resistance

Patents Applicationslast 30 patents

DIFFERENT HEIGHT OF FINS IN SEMICONDUCTOR STRUCTURE

INCREASED SURFACE AREA OF EPITAXIAL STRUCTURES IN A MIXED N/P TYPE...

PRODUCT COMPRISED OF FINFET DEVICES WITH SINGLE DIFFUSION BREAK ISO...

FINFET FABRICATION METHOD

MIXED N/P TYPE NON-PLANAR SEMICONDUCTOR STRUCTURE WITH MULTIPLE EPI...

MULTIPLE EPITAXIAL HEAD RAISED SEMICONDUCTOR STRUCTURE AND METHOD O...

FINFET FABRICATION METHOD