Wataru Saitoh

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Kawasaki-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device having RESURF layer
- Patent number 6,919,610
- Issue date Jul 19, 2005
- Kabushiki Kaisha Toshiba
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device
- Patent number 6,700,156
- Issue date Mar 2, 2004
- Kabushiki Kaisha Toshiba
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having RESURF layer
- Patent number 6,693,338
- Issue date Feb 17, 2004
- Kabushiki Kaisha Toshiba
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power semiconductor device having RESURF layer
- Publication number 20040094819
- Publication date May 20, 2004
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate semiconductor device
- Publication number 20030209741
- Publication date Nov 13, 2003
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate semiconductor device
- Publication number 20030201456
- Publication date Oct 30, 2003
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device having RESURF layer
- Publication number 20020185705
- Publication date Dec 12, 2002
- Wataru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS