Wataru Wakamiya

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming MOS device having field shield isolation
- Patent number 5,930,614
- Issue date Jul 27, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having field shield element isolating structur...
- Patent number 5,521,419
- Issue date May 28, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor type semiconductor memory device and manufacturin...
- Patent number 5,459,344
- Issue date Oct 17, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked type capacitor having a dielectric film formed on a rough s...
- Patent number 5,290,729
- Issue date Mar 1, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Yoshio Hayashide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having bonding pad comprising buffer layer
- Patent number 5,288,661
- Issue date Feb 22, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor type semiconductor memory device and manufacturin...
- Patent number 5,278,437
- Issue date Jan 11, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field shield isolation structure for semiconductor memory device an...
- Patent number 5,225,704
- Issue date Jul 6, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary semiconductor device having improved device isolating...
- Patent number 5,181,094
- Issue date Jan 19, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing stacked capacitor type semiconductor memory...
- Patent number 5,180,683
- Issue date Jan 19, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDD MOSFET with particularly shaped gate electrode immune to hot el...
- Patent number 5,177,571
- Issue date Jan 5, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS semiconductor device with an element isolating field shield
- Patent number 5,164,803
- Issue date Nov 17, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Hiroji Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with improved stacked capacitor structure
- Patent number 5,101,251
- Issue date Mar 31, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary semiconductor device having improved device isolating...
- Patent number 5,097,310
- Issue date Mar 17, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having substantially coplanar surface struc...
- Patent number 5,094,965
- Issue date Mar 10, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Hiroji Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having bonding pad comprising buffer layer
- Patent number 5,084,752
- Issue date Jan 28, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having field shield isolation
- Patent number 5,067,000
- Issue date Nov 19, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Takahisa Eimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor for semiconductor memory device
- Patent number 5,047,817
- Issue date Sep 10, 1991
- Mitsubishi Denki Kabushiki Kasiha
- Wataru Wakamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDD MOS device having an element separation region having an electr...
- Patent number 4,998,161
- Issue date Mar 5, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Hiroshi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor substantially coplanar surface structure
- Patent number 4,994,893
- Issue date Feb 19, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Hiroji Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of conductive layers and ma...
- Patent number 4,984,055
- Issue date Jan 8, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Yoshinori Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an isolation oxide film
- Patent number 4,956,692
- Issue date Sep 11, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Hiroji Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing multilayer interconnection
- Patent number 4,381,595
- Issue date May 3, 1983
- Mitsubishi Denki Kabushiki Kaisha
- Masahiko Denda
- H01 - BASIC ELECTRIC ELEMENTS

Wataru Wakamiya

Person

Patents Grantslast 30 patents

Method for forming MOS device having field shield isolation

Semiconductor device having field shield element isolating structur...

Stacked capacitor type semiconductor memory device and manufacturin...

Stacked type capacitor having a dielectric film formed on a rough s...

Semiconductor device having bonding pad comprising buffer layer

Stacked capacitor type semiconductor memory device and manufacturin...

Field shield isolation structure for semiconductor memory device an...

Complementary semiconductor device having improved device isolating...

Method of manufacturing stacked capacitor type semiconductor memory...

LDD MOSFET with particularly shaped gate electrode immune to hot el...

CMOS semiconductor device with an element isolating field shield

Semiconductor memory device with improved stacked capacitor structure

Complementary semiconductor device having improved device isolating...

Field effect transistor having substantially coplanar surface struc...

Semiconductor device having bonding pad comprising buffer layer

Semiconductor device having field shield isolation

Stacked capacitor for semiconductor memory device

LDD MOS device having an element separation region having an electr...

Field effect transistor substantially coplanar surface structure

Semiconductor device having a plurality of conductive layers and ma...

Semiconductor device having an isolation oxide film

Process for preparing multilayer interconnection