Wayne Yoshida

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Hermosa Beach, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Self-aligned double gate recess for semiconductor field effect tran...
- Patent number 9,583,589
- Issue date Feb 28, 2017
- Northrop Grumman Systems Corporation
- Xiaobing Mei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,709,860
- Issue date May 4, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,582,518
- Issue date Sep 1, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICAT...
- Publication number 20090206369
- Publication date Aug 20, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor semiconductor device and fabricat...
- Publication number 20080111157
- Publication date May 15, 2008
- Northrop Grumman Corporation
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS