Wei Cao

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Key-value storage for URL categorization
- Patent number 11,983,220
- Issue date May 14, 2024
- Palo Alto Networks, Inc.
- Wei Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Communicating URL categorization information
- Patent number 11,748,433
- Issue date Sep 5, 2023
- Palo Alto Networks, Inc.
- Dao-Chen Zheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Key-value storage for URL categorization
- Patent number 11,580,163
- Issue date Feb 14, 2023
- Palo Alto Networks, Inc.
- Wei Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Implementation of LLR biasing method in non-binary iterative decoding
- Patent number 10,547,328
- Issue date Jan 28, 2020
- Marvell International Ltd.
- Shu Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Network services resource management
- Patent number 9,712,374
- Issue date Jul 18, 2017
- Juniper Networks, Inc.
- Wei Cao
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Magnetic tunnel junction for MRAM applications
- Patent number 9,455,400
- Issue date Sep 27, 2016
- Headway Technologies, Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction for MRAM applications
- Patent number 9,224,940
- Issue date Dec 29, 2015
- Headway Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite free layer within magnetic tunnel junction for MRAM appli...
- Patent number 9,159,908
- Issue date Oct 13, 2015
- Headway Technologies, Inc.
- Wei Cao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bottom electrode for MRAM device
- Patent number 8,969,982
- Issue date Mar 3, 2015
- Headway Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implementation of LLR biasing method in non-binary iterative decoding
- Patent number 8,910,028
- Issue date Dec 9, 2014
- Marvell International Ltd.
- Shu Li
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Magnetic tunnel junction for MRAM applications
- Patent number 8,786,036
- Issue date Jul 22, 2014
- Headway Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction for MRAM applications
- Patent number 8,736,004
- Issue date May 27, 2014
- Headway Technologies, Inc.
- Wei Cao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for MEMS scanning mirror with mass remove from mirror backside
- Patent number 8,636,911
- Issue date Jan 28, 2014
- MagIC Technologies, Inc.
- Jun Chen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
System and method of adjusting current drawn by an integrated circu...
- Patent number 8,552,786
- Issue date Oct 8, 2013
- Marvell International Ltd.
- Hongying Sheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Magnetic tunnel junction for MRAM applications
- Patent number 8,492,169
- Issue date Jul 23, 2013
- MagIC Technologies, Inc.
- Wei Cao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction patterning using Ta/TaN as hard mask
- Patent number 8,450,119
- Issue date May 28, 2013
- MagIC Technologies, Inc.
- Chyu-Jiuh Torng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for controlling power supply current using cloc...
- Patent number 8,354,869
- Issue date Jan 15, 2013
- Marvell International Ltd.
- Hongying Sheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Process to fabricate bottom electrode for MRAM device
- Patent number 8,273,666
- Issue date Sep 25, 2012
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom electrode for MRAM device and method to fabricate it
- Patent number 7,838,436
- Issue date Nov 23, 2010
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom conductor for integrated MRAM
- Patent number 7,358,100
- Issue date Apr 15, 2008
- MagIC Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom conductor for integrated MRAM
- Patent number 7,265,404
- Issue date Sep 4, 2007
- MagIC Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating contact pad for magnetic random access memory
- Patent number 7,122,386
- Issue date Oct 17, 2006
- MagIC Technologies, Inc.
- Chyu-Jiuh Torng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMMUNICATING URL CATEGORIZATION INFORMATION
- Publication number 20230350966
- Publication date Nov 2, 2023
- PALO ALTO NETWORKS, INC.
- Dao-Chen Zheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
KEY-VALUE STORAGE FOR URL CATEGORIZATION
- Publication number 20230108362
- Publication date Apr 6, 2023
- PALO ALTO NETWORKS, INC.
- Wei Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
KEY-VALUE STORAGE FOR URL CATEGORIZATION
- Publication number 20210049207
- Publication date Feb 18, 2021
- PALO ALTO NETWORKS, INC.
- Wei Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMMUNICATING URL CATEGORIZATION INFORMATION
- Publication number 20210049226
- Publication date Feb 18, 2021
- PALO ALTO NETWORKS, INC.
- Dao-Chen Zheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Magnetic Tunnel Junction for MRAM Applications
- Publication number 20160211442
- Publication date Jul 21, 2016
- HEADWAY TECHNOLOGIES, INC.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction for MRAM Applications
- Publication number 20140306305
- Publication date Oct 16, 2014
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction for MRAM Applications
- Publication number 20130299823
- Publication date Nov 14, 2013
- Wei Cao
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic tunnel junction for MRAM applications
- Publication number 20130043471
- Publication date Feb 21, 2013
- MagIC Technologies, Inc.
- Wei Cao
- B82 - NANO-TECHNOLOGY
Information Patent Application
Composite free layer within magnetic tunnel junction for MRAM appli...
- Publication number 20120280337
- Publication date Nov 8, 2012
- MagIC Technologies, Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction for MRAM applications
- Publication number 20120181537
- Publication date Jul 19, 2012
- MagIC Technologies Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
Novel process for MEMS scanning mirror with mass remove from mirror...
- Publication number 20120085728
- Publication date Apr 12, 2012
- Advanced NuMicro Systems, Inc.
- Jun Chen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Bottom electrode for MRAM device
- Publication number 20110133300
- Publication date Jun 9, 2011
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to fabricate bottom electrode for MRAM device
- Publication number 20110076785
- Publication date Mar 31, 2011
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bottom electrode for MRAM device and method to fabricate it
- Publication number 20080090307
- Publication date Apr 17, 2008
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bottom conductor for integrated MRAM
- Publication number 20070281427
- Publication date Dec 6, 2007
- MagIC Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic tunnel junction patterning using Ta/TaN as hard mask
- Publication number 20070215911
- Publication date Sep 20, 2007
- MagIC Technologies, Inc.
- Chyu-Jiuh Torng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bottom conductor for integrated MRAM
- Publication number 20070045758
- Publication date Mar 1, 2007
- MagIC Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Key-value storage for URL categorization

Communicating URL categorization information

Key-value storage for URL categorization

Implementation of LLR biasing method in non-binary iterative decoding

Network services resource management

Magnetic tunnel junction for MRAM applications

Magnetic tunnel junction for MRAM applications

Composite free layer within magnetic tunnel junction for MRAM appli...

Bottom electrode for MRAM device

Implementation of LLR biasing method in non-binary iterative decoding

Magnetic tunnel junction for MRAM applications

Magnetic tunnel junction for MRAM applications

Process for MEMS scanning mirror with mass remove from mirror backside

System and method of adjusting current drawn by an integrated circu...

Magnetic tunnel junction for MRAM applications

Magnetic tunnel junction patterning using Ta/TaN as hard mask

Systems and methods for controlling power supply current using cloc...

Process to fabricate bottom electrode for MRAM device

Bottom electrode for MRAM device and method to fabricate it

Bottom conductor for integrated MRAM

Bottom conductor for integrated MRAM

Method of fabricating contact pad for magnetic random access memory

Patents Applicationslast 30 patents

COMMUNICATING URL CATEGORIZATION INFORMATION

KEY-VALUE STORAGE FOR URL CATEGORIZATION

KEY-VALUE STORAGE FOR URL CATEGORIZATION

COMMUNICATING URL CATEGORIZATION INFORMATION

Magnetic Tunnel Junction for MRAM Applications

Magnetic Tunnel Junction for MRAM Applications

Magnetic Tunnel Junction for MRAM Applications

Magnetic tunnel junction for MRAM applications

Composite free layer within magnetic tunnel junction for MRAM appli...

Magnetic Tunnel Junction for MRAM applications

Novel process for MEMS scanning mirror with mass remove from mirror...

Bottom electrode for MRAM device

Process to fabricate bottom electrode for MRAM device

Bottom electrode for MRAM device and method to fabricate it

Bottom conductor for integrated MRAM

Magnetic tunnel junction patterning using Ta/TaN as hard mask

Bottom conductor for integrated MRAM