Wei Hong

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming an IC product comprising transistor devices with...
- Patent number 11,315,835
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with niobium-based silicide layer and...
- Patent number 11,239,336
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing dielectric void over trench isolation region
- Patent number 11,171,036
- Issue date Nov 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures in a wide gate pitch region of semiconduct...
- Patent number 11,164,794
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask-free methods of forming structures in a semiconductor device
- Patent number 11,004,953
- Issue date May 11, 2021
- GLOBALFOUNDRIES U.S. INC.
- Rinus Tek Po Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break device for FDSOI
- Patent number 10,957,578
- Issue date Mar 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask-free methods of forming structures in a semiconductor device
- Patent number 10,896,853
- Issue date Jan 19, 2021
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of enhanced faceted raised source/drain EPI material for...
- Patent number 10,825,897
- Issue date Nov 3, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor recess to epitaxial regions and related integrated ci...
- Patent number 10,811,422
- Issue date Oct 20, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion breaks formed with liner protection for source and...
- Patent number 10,784,342
- Issue date Sep 22, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of enhanced faceted raised source/drain epi material for...
- Patent number 10,777,642
- Issue date Sep 15, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted epitaxial source/drain regions
- Patent number 10,756,184
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for use in forming contacts that extend to multiple...
- Patent number 10,714,577
- Issue date Jul 14, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with a wrap-around silicide source/drain contact stru...
- Patent number 10,700,173
- Issue date Jun 30, 2020
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistors with spacers on the gates
- Patent number 10,636,894
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with improved dielectric gap fill
- Patent number 10,546,775
- Issue date Jan 28, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial region for embedded source/drain region having uniform th...
- Patent number 10,461,155
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut method
- Patent number 10,396,206
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical field effect transistors with different...
- Patent number 10,249,538
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet diffusion break having protective liner in fin insulator
- Patent number 10,164,010
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure incorporating non-planar field effect...
- Patent number 10,068,902
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH NIOBIUM-BASED SILICIDE LAYER AND...
- Publication number 20210249518
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING DIELECTRIC VOID OVER TRENCH ISOLATION REGION
- Publication number 20210111065
- Publication date Apr 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES IN A WIDE GATE PITCH REGION OF SEMICONDUCT...
- Publication number 20210035869
- Publication date Feb 4, 2021
- GLOBALFOUNDRIES INC.
- WEI HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASK-FREE METHODS OF FORMING STRUCTURES IN A SEMICONDUCTOR DEVICE
- Publication number 20200411664
- Publication date Dec 31, 2020
- GLOBALFOUNDRIES INC.
- RINUS TEK PO LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASK-FREE METHODS OF FORMING STRUCTURES IN A SEMICONDUCTOR DEVICE
- Publication number 20200343142
- Publication date Oct 29, 2020
- GLOBALFOUNDRIES INC.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING AN IC PRODUCT COMPRISING TRANSISTOR DEVICES WITH...
- Publication number 20200286790
- Publication date Sep 10, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...
- Publication number 20200243646
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...
- Publication number 20200243645
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR RECESS TO EPITAXIAL REGIONS AND RELATED INTEGRATED CI...
- Publication number 20200161315
- Publication date May 21, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20200144365
- Publication date May 7, 2020
- GLOBALFOUNDRIES INC.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR USE IN FORMING CONTACTS THAT EXTEND TO MULTIPLE...
- Publication number 20200105886
- Publication date Apr 2, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAK DEVICE FOR FDSOI
- Publication number 20200105584
- Publication date Apr 2, 2020
- GLOBALFOUNDRIES INC.
- Wei HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH IMPROVED DIELECTRIC GAP FILL
- Publication number 20200043779
- Publication date Feb 6, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRU...
- Publication number 20190312117
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES
- Publication number 20190280105
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...
- Publication number 20190148492
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...
- Publication number 20190103319
- Publication date Apr 4, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT METHOD
- Publication number 20190013245
- Publication date Jan 10, 2019
- GLOBALFOUNDRIES INC.
- Ashish Kumar JHA
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods of forming an IC product comprising transistor devices with...

Integrated circuit structure with niobium-based silicide layer and...

Preventing dielectric void over trench isolation region

Semiconductor structures in a wide gate pitch region of semiconduct...

Mask-free methods of forming structures in a semiconductor device

Single diffusion break device for FDSOI

Mask-free methods of forming structures in a semiconductor device

Formation of enhanced faceted raised source/drain EPI material for...

Semiconductor recess to epitaxial regions and related integrated ci...

Single diffusion breaks formed with liner protection for source and...

Formation of enhanced faceted raised source/drain epi material for...

Faceted epitaxial source/drain regions

Etch stop layer for use in forming contacts that extend to multiple...

FinFET device with a wrap-around silicide source/drain contact stru...

Fin-type transistors with spacers on the gates

Field-effect transistors with improved dielectric gap fill

Epitaxial region for embedded source/drain region having uniform th...

Gate cut method

Method of forming vertical field effect transistors with different...

Finfet diffusion break having protective liner in fin insulator

Integrated circuit structure incorporating non-planar field effect...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURE WITH NIOBIUM-BASED SILICIDE LAYER AND...

PREVENTING DIELECTRIC VOID OVER TRENCH ISOLATION REGION

SEMICONDUCTOR STRUCTURES IN A WIDE GATE PITCH REGION OF SEMICONDUCT...

MASK-FREE METHODS OF FORMING STRUCTURES IN A SEMICONDUCTOR DEVICE

MASK-FREE METHODS OF FORMING STRUCTURES IN A SEMICONDUCTOR DEVICE

METHODS OF FORMING AN IC PRODUCT COMPRISING TRANSISTOR DEVICES WITH...

FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...

FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...

SEMICONDUCTOR RECESS TO EPITAXIAL REGIONS AND RELATED INTEGRATED CI...

FACETED EPITAXIAL SOURCE/DRAIN REGIONS

ETCH STOP LAYER FOR USE IN FORMING CONTACTS THAT EXTEND TO MULTIPLE...

SINGLE DIFFUSION BREAK DEVICE FOR FDSOI

FIELD-EFFECT TRANSISTORS WITH IMPROVED DIELECTRIC GAP FILL

FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRU...

FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES

EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...

METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...

GATE CUT METHOD