Wei Hua TONG

Person

Mechanicville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Conformal nitridation of one or more fin-type transistor layers
- Patent number 9,698,269
- Issue date Jul 4, 2017
- GLOBALFOUNDRIES Inc.
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned NiSi placement with improved performance and y...
- Patent number 9,607,989
- Issue date Mar 28, 2017
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating transistor(s) with raised active regions having angled...
- Patent number 9,331,159
- Issue date May 3, 2016
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal nitridation of one or more fin-type transistor layers
- Patent number 9,312,145
- Issue date Apr 12, 2016
- GLOBALFOUNDRIES Inc.
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a gate by depositing a thin barrier layer on a titanium nit...
- Patent number 9,202,697
- Issue date Dec 1, 2015
- GLOBALFOUNDRIES Inc.
- Tien-Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods of forming integrated circuits with...
- Patent number 9,123,783
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES, INC.
- Xin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits including FINFET devices with shallow trench is...
- Patent number 9,087,870
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES, INC.
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FABRICATING SEMICONDUCTOR STRUCTURE WITH CONDENSED SILI...
- Publication number 20160254145
- Publication date Sep 1, 2016
- GLOBALFOUNDRIES INC.
- Dina H. TRIYOSO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS
- Publication number 20160190324
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Wei Hua TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED NiSi PLACEMENT WITH IMPROVED PERFORMANCE AND Y...
- Publication number 20160163702
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS
- Publication number 20150255277
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Wei Hua TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING GATE STRUCTURES FOR SEMICONDUCT...
- Publication number 20150024585
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES Inc.
- Tien-Ying LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FINS WITH RECESS SHAPES
- Publication number 20150017774
- Publication date Jan 15, 2015
- GLOBALFOUNDRIES INC.
- Wei Hua TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING FINFET DEVICES WITH SHALLOW TRENCH IS...
- Publication number 20140353795
- Publication date Dec 4, 2014
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS WITH...
- Publication number 20140131881
- Publication date May 15, 2014
- GLOBALFOUNDRIES INC.
- Xin Wang
- H01 - BASIC ELECTRIC ELEMENTS

Wei Hua TONG

Person

Patents Grantslast 30 patents

Conformal nitridation of one or more fin-type transistor layers

Forming self-aligned NiSi placement with improved performance and y...

Fabricating transistor(s) with raised active regions having angled...

Conformal nitridation of one or more fin-type transistor layers

Forming a gate by depositing a thin barrier layer on a titanium nit...

Integrated circuits and methods of forming integrated circuits with...

Integrated circuits including FINFET devices with shallow trench is...

Patents Applicationslast 30 patents

METHODS FOR FABRICATING SEMICONDUCTOR STRUCTURE WITH CONDENSED SILI...

CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS

FORMING SELF-ALIGNED NiSi PLACEMENT WITH IMPROVED PERFORMANCE AND Y...

CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS

SYSTEMS AND METHODS FOR FABRICATING GATE STRUCTURES FOR SEMICONDUCT...

METHOD OF FORMING FINS WITH RECESS SHAPES

INTEGRATED CIRCUITS INCLUDING FINFET DEVICES WITH SHALLOW TRENCH IS...

INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS WITH...