Wei-Sheng King

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Trench capacitor with expanded area and method of making the same
- Patent number 6,693,005
- Issue date Feb 17, 2004
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with expanded area and method of making the same
- Patent number 6,515,327
- Issue date Feb 4, 2003
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process of capacitor
- Patent number 6,423,611
- Issue date Jul 23, 2002
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a T-shaped capacitor
- Patent number 6,399,980
- Issue date Jun 4, 2002
- Mosel Vitelic, Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing nitride residue in a LOCOS isolation area
- Patent number 6,352,908
- Issue date Mar 5, 2002
- Mosel Vitelic, Inc.
- Wei-Sheng King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a deep trench capacitor of a dram cell
- Patent number 6,297,088
- Issue date Oct 2, 2001
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench capacitor
- Patent number 6,271,079
- Issue date Aug 7, 2001
- Mosel Vitelic Inc
- Houng-Chi Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating field oxide
- Patent number 6,261,926
- Issue date Jul 17, 2001
- Mosel Vitelic, Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing a polysilicon buffer using an etching selectivit...
- Patent number 6,255,188
- Issue date Jul 3, 2001
- Mosel Vitelic, Inc.
- Chien-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing polysilicon residual in a LOCOS isolation proces...
- Patent number 6,245,643
- Issue date Jun 12, 2001
- Mosel Vitelic, Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a deep trench capacitor of a DRAM cell
- Patent number 6,242,357
- Issue date Jun 5, 2001
- Mosel Vitelic Inc
- Houng-Chi Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process for a capacitor
- Patent number 6,235,604
- Issue date May 22, 2001
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process and structure of capacitor
- Patent number 6,153,462
- Issue date Nov 28, 2000
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process of capacitor
- Patent number 6,117,727
- Issue date Sep 12, 2000
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and structure of a modified T-shaped capacitor having a rou...
- Patent number 6,037,624
- Issue date Mar 14, 2000
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process and structure of capacitor
- Patent number 6,027,761
- Issue date Feb 22, 2000
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Trench capacitor with expanded area and method of making the same
- Publication number 20030116796
- Publication date Jun 26, 2003
- Mosel Vitelic Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure of a capacitor
- Publication number 20010016395
- Publication date Aug 23, 2001
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS

Wei-Sheng King

Person

Patents Grantslast 30 patents

Trench capacitor with expanded area and method of making the same

Trench capacitor with expanded area and method of making the same

Manufacturing process of capacitor

Fabrication of a T-shaped capacitor

Method for reducing nitride residue in a LOCOS isolation area

Method for forming a deep trench capacitor of a dram cell

Method of forming a trench capacitor

Method for fabricating field oxide

Method of removing a polysilicon buffer using an etching selectivit...

Method of removing polysilicon residual in a LOCOS isolation proces...

Method for forming a deep trench capacitor of a DRAM cell

Manufacturing process for a capacitor

Manufacturing process and structure of capacitor

Manufacturing process of capacitor

Process and structure of a modified T-shaped capacitor having a rou...

Manufacturing process and structure of capacitor

Patents Applicationslast 30 patents

Trench capacitor with expanded area and method of making the same

Structure of a capacitor