Wei YUE

Follow

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage LDMOS device with an increased voltage at source (high...
- Patent number 9,543,432
- Issue date Jan 10, 2017
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wei Yue
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High Voltage MOSFET Device
- Publication number 20230246081
- Publication date Aug 3, 2023
- Nuvolta Technologies (Hefei) Co., Ltd.
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage LDMOS Device with an Increased Voltage at Source (High...
- Publication number 20160240660
- Publication date Aug 18, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wei YUE
- H01 - BASIC ELECTRIC ELEMENTS