Wei Zhao

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device with unique read and/or programming parameters
- Patent number 12,057,161
- Issue date Aug 6, 2024
- SanDisk Technologies LLC
- Wei Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, methods, and devices for queue availability monitoring
- Patent number 12,001,846
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Chao Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Techniques for checking vulnerability to cross-temperature read err...
- Patent number 11,972,804
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Xuan Tian
- G11 - INFORMATION STORAGE
Information Patent Grant
Read pass voltage dependent recovery voltage setting between progra...
- Patent number 11,972,810
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature-dependent word line voltage and discharge rate for refr...
- Patent number 11,894,051
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Dong-Il Moon
- G11 - INFORMATION STORAGE
Information Patent Grant
Digital temperature compensation filtering
- Patent number 11,705,203
- Issue date Jul 18, 2023
- SanDisk Technologies LLC
- Henry Chin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Systems, methods, and devices for queue availability monitoring
- Patent number 11,467,843
- Issue date Oct 11, 2022
- Samsung Electronics Co., Ltd.
- Chao Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,101,288
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,063,063
- Issue date Jul 13, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND string pre-charge during programming by injecting holes via su...
- Patent number 10,957,394
- Issue date Mar 23, 2021
- SanDisk Technologies LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with drain-select-level isolation s...
- Patent number 10,943,917
- Issue date Mar 9, 2021
- SanDisk Technologies LLC
- Takaaki Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing injection type of program disturb during program...
- Patent number 10,811,110
- Issue date Oct 20, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining channel pre-charge in program operation
- Patent number 10,790,003
- Issue date Sep 29, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of reducing injection type of program disturb during program...
- Patent number 10,770,157
- Issue date Sep 8, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing post-read disturb in a nonvolatile memory device
- Patent number 10,726,891
- Issue date Jul 28, 2020
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Reducing read disturb in two-tier memory device by modifying durati...
- Patent number 10,685,723
- Issue date Jun 16, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with drain-select-level isolation s...
- Patent number 10,685,978
- Issue date Jun 16, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with drain-select-level isolation s...
- Patent number 10,685,979
- Issue date Jun 16, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for reducing noise generated from locked out s...
- Patent number 10,636,494
- Issue date Apr 28, 2020
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing read disturb in two-tier memory device by modifying ramp u...
- Patent number 10,636,500
- Issue date Apr 28, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-sensing scan for cross-temperature mitigation
- Patent number 10,636,488
- Issue date Apr 28, 2020
- Western Digital Technologies, Inc.
- Lei Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-stage ramp up of word line voltages in memory device to suppres...
- Patent number 10,629,272
- Issue date Apr 21, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with charge isolation to reduce injection type of pro...
- Patent number 10,593,411
- Issue date Mar 17, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for in-situ programming and read operation adjust...
- Patent number 10,559,370
- Issue date Feb 11, 2020
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing hot electron injection type of read disturb in 3D memory d...
- Patent number 10,249,372
- Issue date Apr 2, 2019
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Channel pre-charge to suppress disturb of select gate transistors d...
- Patent number 10,068,651
- Issue date Sep 4, 2018
- SanDisk Technologies LLC
- Vinh Diep
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing hot electron injection type of read disturb during read re...
- Patent number 9,761,320
- Issue date Sep 12, 2017
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Mitigating hot electron program disturb
- Patent number 9,640,273
- Issue date May 2, 2017
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices having a single layer channel and...
- Patent number 9,530,785
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing CMOS devices over memory...
- Patent number 9,530,790
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Zhenyu Lu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS, METHODS, AND DEVICES FOR QUEUE AVAILABILITY MONITORING
- Publication number 20240320010
- Publication date Sep 26, 2024
- Samsung Electronics Co., Ltd.
- Chao YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNIQUES FOR CHECKING VULNERABILITY TO CROSS-TEMPERATURE READ ERR...
- Publication number 20230420053
- Publication date Dec 28, 2023
- SANDISK TECHNOLOGIES LLC
- Xuan Tian
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH UNIQUE READ AND/OR PROGRAMMING PARAMETERS
- Publication number 20230420042
- Publication date Dec 28, 2023
- SANDISK TECHNOLOGIES LLC
- Wei Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE-DEPENDENT WORD LINE VOLTAGE AND DISCHARGE RATE FOR REFR...
- Publication number 20230410901
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Dong-Il Moon
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID PRECHARGE SELECT SCHEME TO SAVE PROGRAM ICC
- Publication number 20230410923
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Wei Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
READ PASS VOLTAGE DEPENDENT RECOVERY VOLTAGE SETTING BETWEEN PROGRA...
- Publication number 20230410920
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS, METHODS, AND DEVICES FOR QUEUE AVAILABILITY MONITORING
- Publication number 20230108597
- Publication date Apr 6, 2023
- Samsung Electronics Co., Ltd.
- Chao YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DIGITAL TEMPERATURE COMPENSATION FILTERING
- Publication number 20220406383
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Henry Chin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS, METHODS, AND DEVICES FOR QUEUE AVAILABILITY MONITORING
- Publication number 20210397456
- Publication date Dec 23, 2021
- Samsung Electronics Co., Ltd.
- Chao YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COUPLING CAPACITANCE REDUCTION DURING PROGRAM VERIFY FOR PERFORMANC...
- Publication number 20210383879
- Publication date Dec 9, 2021
- SANDISK TECHNOLOGIES LLC
- Lei Lin
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...
- Publication number 20210183883
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...
- Publication number 20210183882
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING POST-READ DISTURB IN A NONVOLATILE MEMORY DEVICE
- Publication number 20200258558
- Publication date Aug 13, 2020
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH DRAIN-SELECT-LEVEL ISOLATION S...
- Publication number 20200251488
- Publication date Aug 6, 2020
- SANDISK TECHNOLOGIES LLC
- Takaaki IWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING READ DISTURB IN TWO-TIER MEMORY DEVICE BY MODIFYING DURATI...
- Publication number 20200202961
- Publication date Jun 25, 2020
- SANDISK TECHNOLOGIES LLC
- Hong-Yan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-SENSING SCAN FOR CROSS-TEMPERATURE MITIGATION
- Publication number 20190371402
- Publication date Dec 5, 2019
- Western Digital Technologies, Inc.
- Lei Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM AND METHOD FOR IN-SITU PROGRAMMING AND READ OPERATION ADJUST...
- Publication number 20190295669
- Publication date Sep 26, 2019
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
LOCKOUT NOISE REDUCTION CIRCUIT FOR STORAGE DEVICES
- Publication number 20190267096
- Publication date Aug 29, 2019
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing Hot Electron Injection Type Of Read Disturb In 3D Memory D...
- Publication number 20190074062
- Publication date Mar 7, 2019
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Method Of Reducing Hot Electron Injection Type Of Read Disturb In D...
- Publication number 20160217865
- Publication date Jul 28, 2016
- SANDISK TECHNOLOGIES INC.
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE WITH BLOCKING DIELECTRIC HAVING ENH...
- Publication number 20160172366
- Publication date Jun 16, 2016
- SanDisk Technologies, Inc.
- Sateesh KOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method To Recover Cycling Damage And Improve Long Term Data Retention
- Publication number 20160172044
- Publication date Jun 16, 2016
- SANDISK TECHNOLOGIES INC.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
DEUTERIUM ANNEAL OF SEMICONDUCTOR CHANNELS IN A THREE-DIMENSIONAL M...
- Publication number 20160118391
- Publication date Apr 28, 2016
- SanDisk Technologies, Inc.
- Wei ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programming Of Drain Side Word Line To Reduce Program Disturb And C...
- Publication number 20160099058
- Publication date Apr 7, 2016
- SANDISK TECHNOLOGIES INC.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
Bias To Detect And Prevent Short Circuits In Three-Dimensional Memo...
- Publication number 20160035426
- Publication date Feb 4, 2016
- SanDisk Technologies, Inc.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
Look Ahead Read Method For Non-Volatile Memory
- Publication number 20160005491
- Publication date Jan 7, 2016
- SANDISK TECHNOLOGIES INC.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
Methods And Systems For Test Power Analysis
- Publication number 20140365148
- Publication date Dec 11, 2014
- Mohammad Tehranipoor
- G01 - MEASURING TESTING

Person

Patents Grantslast 30 patents

Memory device with unique read and/or programming parameters

Systems, methods, and devices for queue availability monitoring

Techniques for checking vulnerability to cross-temperature read err...

Read pass voltage dependent recovery voltage setting between progra...

Temperature-dependent word line voltage and discharge rate for refr...

Digital temperature compensation filtering

Systems, methods, and devices for queue availability monitoring

Three-dimensional memory device containing plural work function wor...

Three-dimensional memory device containing plural work function wor...

NAND string pre-charge during programming by injecting holes via su...

Three-dimensional memory device with drain-select-level isolation s...

Method of reducing injection type of program disturb during program...

Maintaining channel pre-charge in program operation

Method of reducing injection type of program disturb during program...

Reducing post-read disturb in a nonvolatile memory device

Reducing read disturb in two-tier memory device by modifying durati...

Three-dimensional memory device with drain-select-level isolation s...

Three-dimensional memory device with drain-select-level isolation s...

Apparatus and method for reducing noise generated from locked out s...

Reducing read disturb in two-tier memory device by modifying ramp u...

Multi-sensing scan for cross-temperature mitigation

Two-stage ramp up of word line voltages in memory device to suppres...

Memory device with charge isolation to reduce injection type of pro...

System and method for in-situ programming and read operation adjust...

Reducing hot electron injection type of read disturb in 3D memory d...

Channel pre-charge to suppress disturb of select gate transistors d...

Reducing hot electron injection type of read disturb during read re...

Mitigating hot electron program disturb

Three-dimensional memory devices having a single layer channel and...

Three-dimensional memory device containing CMOS devices over memory...

Patents Applicationslast 30 patents

SYSTEMS, METHODS, AND DEVICES FOR QUEUE AVAILABILITY MONITORING

TECHNIQUES FOR CHECKING VULNERABILITY TO CROSS-TEMPERATURE READ ERR...

MEMORY DEVICE WITH UNIQUE READ AND/OR PROGRAMMING PARAMETERS

TEMPERATURE-DEPENDENT WORD LINE VOLTAGE AND DISCHARGE RATE FOR REFR...

HYBRID PRECHARGE SELECT SCHEME TO SAVE PROGRAM ICC

READ PASS VOLTAGE DEPENDENT RECOVERY VOLTAGE SETTING BETWEEN PROGRA...

SYSTEMS, METHODS, AND DEVICES FOR QUEUE AVAILABILITY MONITORING

DIGITAL TEMPERATURE COMPENSATION FILTERING

SYSTEMS, METHODS, AND DEVICES FOR QUEUE AVAILABILITY MONITORING

COUPLING CAPACITANCE REDUCTION DURING PROGRAM VERIFY FOR PERFORMANC...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...

REDUCING POST-READ DISTURB IN A NONVOLATILE MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICE WITH DRAIN-SELECT-LEVEL ISOLATION S...

REDUCING READ DISTURB IN TWO-TIER MEMORY DEVICE BY MODIFYING DURATI...

MULTI-SENSING SCAN FOR CROSS-TEMPERATURE MITIGATION

SYSTEM AND METHOD FOR IN-SITU PROGRAMMING AND READ OPERATION ADJUST...

LOCKOUT NOISE REDUCTION CIRCUIT FOR STORAGE DEVICES

Reducing Hot Electron Injection Type Of Read Disturb In 3D Memory D...

Method Of Reducing Hot Electron Injection Type Of Read Disturb In D...

THREE DIMENSIONAL MEMORY DEVICE WITH BLOCKING DIELECTRIC HAVING ENH...

Method To Recover Cycling Damage And Improve Long Term Data Retention

DEUTERIUM ANNEAL OF SEMICONDUCTOR CHANNELS IN A THREE-DIMENSIONAL M...

Programming Of Drain Side Word Line To Reduce Program Disturb And C...

Bias To Detect And Prevent Short Circuits In Three-Dimensional Memo...

Look Ahead Read Method For Non-Volatile Memory

Methods And Systems For Test Power Analysis