Wei Zhao

Person

Fort Lee, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation pillar first gate structures and methods of forming same
- Patent number 10,600,914
- Issue date Mar 24, 2020
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled memory structures or other logic devices with middle of the...
- Patent number 10,475,890
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with fins formed by a damascene-like process
- Patent number 10,403,742
- Issue date Sep 3, 2019
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut method
- Patent number 10,396,206
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming source/drain contact structures on integrated ci...
- Patent number 10,373,877
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide formation through hybrid methods of thermal and depositi...
- Patent number 10,361,289
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with fins having independently-dimensioned...
- Patent number 10,325,811
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistors with single-diffusion breaks and...
- Patent number 10,121,788
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon liner for STI CMP stop in FinFET
- Patent number 9,984,933
- Issue date May 29, 2018
- GLOBALFOUNDRIES Inc.
- Yiheng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistors with single-diffusion breaks and...
- Patent number 9,935,104
- Issue date Apr 3, 2018
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming diffusion breaks on integrated circuit products...
- Patent number 9,653,583
- Issue date May 16, 2017
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS
- Publication number 20190273148
- Publication date Sep 5, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION PILLAR FIRST GATE STRUCTURES AND METHODS OF FORMING SAME
- Publication number 20190221661
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH FINS HAVING INDEPENDENTLY-DIMENSIONED...
- Publication number 20190131177
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...
- Publication number 20190109197
- Publication date Apr 11, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS
- Publication number 20190097019
- Publication date Mar 28, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT METHOD
- Publication number 20190013245
- Publication date Jan 10, 2019
- GLOBALFOUNDRIES INC.
- Ashish Kumar JHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTORS WITH SINGLE-DIFFUSION BREAKS AND...
- Publication number 20180323191
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- HAITING WANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Isolation pillar first gate structures and methods of forming same

Scaled memory structures or other logic devices with middle of the...

Field-effect transistors with fins formed by a damascene-like process

Gate cut method

Methods of forming source/drain contact structures on integrated ci...

Gate oxide formation through hybrid methods of thermal and depositi...

Field-effect transistors with fins having independently-dimensioned...

Fin-type field effect transistors with single-diffusion breaks and...

Silicon liner for STI CMP stop in FinFET

Fin-type field effect transistors with single-diffusion breaks and...

Methods of forming diffusion breaks on integrated circuit products...

Patents Applicationslast 30 patents

FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS

ISOLATION PILLAR FIRST GATE STRUCTURES AND METHODS OF FORMING SAME

FIELD-EFFECT TRANSISTORS WITH FINS HAVING INDEPENDENTLY-DIMENSIONED...

SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...

FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS

GATE CUT METHOD

FIN-TYPE FIELD EFFECT TRANSISTORS WITH SINGLE-DIFFUSION BREAKS AND...