Wei Zou

Person

Lexington, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low-temperature implant for buried layer formation
- Patent number 12,087,585
- Issue date Sep 10, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside wafer dopant activation
- Patent number 12,046,473
- Issue date Jul 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,955,533
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minority carrier lifetime reduction for SiC IGBT devices
- Patent number 11,948,799
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming N-type buried layer in a substrate by performin...
- Patent number 11,881,405
- Issue date Jan 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channeled implants for SiC MOSFET fabrication
- Patent number 11,804,537
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized stressor formation by ion implantation
- Patent number 11,728,383
- Issue date Aug 15, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for selective tungsten contact formation on semiconducto...
- Patent number 11,728,214
- Issue date Aug 15, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation enabled precisely controlled source and drain etch depth
- Patent number 11,721,743
- Issue date Aug 8, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for hi-precision ion implantation
- Patent number 11,699,570
- Issue date Jul 11, 2023
- Applied Materials, Inc.
- Supakit Charnvanichborikarn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to form trench-bottom oxide of MOSFET
- Patent number 11,695,060
- Issue date Jul 4, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside wafer dopant activation
- Patent number 11,694,897
- Issue date Jul 4, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation method to enable continuous channel layer
- Patent number 11,664,419
- Issue date May 30, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing photoresist etch selectivity to enable high e...
- Patent number 11,527,412
- Issue date Dec 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stress memorization layer on backside of semicond...
- Patent number 11,444,153
- Issue date Sep 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,430,877
- Issue date Aug 30, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled ion implant to reduce MOSFET trench sidewall roughness
- Patent number 11,424,125
- Issue date Aug 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC TRENCH BOTTOM CORNER ROUNDING
- Publication number 20250038000
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE ROUGHNESS REDUCTION FOR PHOTONICS USING HIGH-TEMPERATURE IM...
- Publication number 20240255700
- Publication date Aug 1, 2024
- Applied Materials, Inc.
- Eric Jay Simmons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRECISION OXIDATION CONTROL BY ION IMPLANTATION
- Publication number 20240203743
- Publication date Jun 20, 2024
- Applied Materials, Inc.
- Supakit Charnvanichborikarn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Selective Implantation into STI of ETSOI Device
- Publication number 20240194518
- Publication date Jun 13, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM
- Publication number 20240145217
- Publication date May 2, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO CONTROL BURIED CHANNEL RECESS DEPTH
- Publication number 20230253208
- Publication date Aug 10, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO INCREASE MOSFET THRESHOLD VOLTAGE
- Publication number 20230178373
- Publication date Jun 8, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINORITY CARRIER LIFETIME REDUCTION FOR SIC IGBT DEVICES
- Publication number 20230090954
- Publication date Mar 23, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR CONTROLLED ION IMPLANTATION
- Publication number 20230016122
- Publication date Jan 19, 2023
- Applied Materials, Inc.
- Alexander K. Eidukonis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
BACKSIDE WAFER DOPANT ACTIVATION
- Publication number 20220415656
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION
- Publication number 20220415657
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE WAFER DOPANT ACTIVATION
- Publication number 20220406604
- Publication date Dec 22, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR SELECTIVE TUNGSTEN CONTACT FORMATION ON SEMICONDUCTO...
- Publication number 20220392804
- Publication date Dec 8, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Channeled Implants For SiC MOSFET Fabrication
- Publication number 20220359710
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220359723
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED ION IMPLANT TO REDUCE MOSFET TRENCH SIDEWALL ROUGHNESS
- Publication number 20220223416
- Publication date Jul 14, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO FORM TRENCH-BOTTOM OXIDE OF MOSFET
- Publication number 20220199806
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantation Enabled Precisely Controlled Source And Drain Etch Depth
- Publication number 20220199802
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220157968
- Publication date May 19, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Method To Enable Continuous Channel Layer
- Publication number 20220109045
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Localized Stressor Formation By Ion Implantation
- Publication number 20220102500
- Publication date Mar 31, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INCREASING PHOTORESIST ETCH SELECTIVITY TO ENABLE HIGH E...
- Publication number 20220044939
- Publication date Feb 10, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE INCLUDING STRESS MEMORIZATION LAYER
- Publication number 20210050411
- Publication date Feb 18, 2021
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Low-temperature implant for buried layer formation

Backside wafer dopant activation

Ion implantation to reduce nanosheet gate length variation

Minority carrier lifetime reduction for SiC IGBT devices

Methods for forming N-type buried layer in a substrate by performin...

Channeled implants for SiC MOSFET fabrication

Localized stressor formation by ion implantation

Techniques for selective tungsten contact formation on semiconducto...

Implantation enabled precisely controlled source and drain etch depth

System and method for hi-precision ion implantation

Ion implantation to form trench-bottom oxide of MOSFET

Backside wafer dopant activation

Isolation method to enable continuous channel layer

Method for increasing photoresist etch selectivity to enable high e...

Method of forming stress memorization layer on backside of semicond...

Ion implantation to reduce nanosheet gate length variation

Angled ion implant to reduce MOSFET trench sidewall roughness

Patents Applicationslast 30 patents

SiC TRENCH BOTTOM CORNER ROUNDING

SURFACE ROUGHNESS REDUCTION FOR PHOTONICS USING HIGH-TEMPERATURE IM...

METHOD FOR PRECISION OXIDATION CONTROL BY ION IMPLANTATION

Selective Implantation into STI of ETSOI Device

METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM

ION IMPLANTATION TO CONTROL BURIED CHANNEL RECESS DEPTH

ION IMPLANTATION TO INCREASE MOSFET THRESHOLD VOLTAGE

MINORITY CARRIER LIFETIME REDUCTION FOR SIC IGBT DEVICES

METHOD AND APPARATUS FOR CONTROLLED ION IMPLANTATION

BACKSIDE WAFER DOPANT ACTIVATION

LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION

BACKSIDE WAFER DOPANT ACTIVATION

TECHNIQUES FOR SELECTIVE TUNGSTEN CONTACT FORMATION ON SEMICONDUCTO...

Channeled Implants For SiC MOSFET Fabrication

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

ANGLED ION IMPLANT TO REDUCE MOSFET TRENCH SIDEWALL ROUGHNESS

ION IMPLANTATION TO FORM TRENCH-BOTTOM OXIDE OF MOSFET

Implantation Enabled Precisely Controlled Source And Drain Etch Depth

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

Isolation Method To Enable Continuous Channel Layer

Localized Stressor Formation By Ion Implantation

METHOD FOR INCREASING PHOTORESIST ETCH SELECTIVITY TO ENABLE HIGH E...

SEMICONDUCTOR SUBSTRATE INCLUDING STRESS MEMORIZATION LAYER