Weifeng Qu

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Patents Grantslast 30 patents

Information Patent Grant
Carbon-doped silicon single crystal wafer and method for manufactur...
- Patent number 11,761,118
- Issue date Sep 19, 2023
- Shin-Etsu Handotai Co., Ltd.
- Weifeng Qu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for silicon wafer and silicon wafer
- Patent number 6,544,656
- Issue date Apr 8, 2003
- Shin-Etsu Handotai Co., Ltd.
- Takao Abe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20240117525
- Publication date Apr 11, 2024
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR PHASE GROWTH, VAPOR PHAS...
- Publication number 20230235481
- Publication date Jul 27, 2023
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILIC...
- Publication number 20230212782
- Publication date Jul 6, 2023
- Shin-Etsu Handotai Co., Ltd.
- Weifeng QU
- C30 - CRYSTAL GROWTH
Information Patent Application
CARBON-DOPED SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTUR...
- Publication number 20220259767
- Publication date Aug 18, 2022
- Shin-Etsu Handotai Co., Ltd.
- Weifeng QU
- C30 - CRYSTAL GROWTH