Weijia XU

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Beijing, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing MOS transistor with stack of cascaded nanow...
- Patent number 10,068,990
- Issue date Sep 4, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method for manufacturing the same
- Patent number 9,391,073
- Issue date Jul 12, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING MOS TRANSISTOR WITH STACK OF CASCADED NANOW...
- Publication number 20160233317
- Publication date Aug 11, 2016
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150311200
- Publication date Oct 29, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS