Weiwei Chen

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Yongin-si, KR

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Patents Grantslast 30 patents

Information Patent Grant
Germanium silicide layer including vanadium, platinum, and nickel
- Patent number 8,232,613
- Issue date Jul 31, 2012
- Samsung Electronics Co., Ltd.
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a germanium silicide layer, semiconductor device...
- Patent number 7,863,142
- Issue date Jan 4, 2011
- Samsung Electronics Co., Ltd.
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of forming a germanium silicide layer, semiconductor device...
- Publication number 20110049587
- Publication date Mar 3, 2011
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a germanium silicide layer, semiconductor device...
- Publication number 20090146183
- Publication date Jun 11, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS