Wen Chu HSIAO

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for increasing germanium concentration of surfaces of a sil...
- Patent number 12,237,404
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing germanium concentration of surfaces of a sil...
- Patent number 11,721,745
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with blocking layer
- Patent number 11,532,749
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,527,442
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for FinFET semiconductor device
- Patent number 11,309,418
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,088,028
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing germanium concentration of FIN and resulting...
- Patent number 11,011,623
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with blocking layer and method for forming...
- Patent number 10,868,181
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain epitaxy re-shaping
- Patent number 10,727,131
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a contact structure for a FinFET semiconductor de...
- Patent number 10,297,690
- Issue date May 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device structure
- Patent number 10,269,648
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,735,271
- Issue date Aug 15, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface tension modification using silane with hydrophobic function...
- Patent number 9,698,263
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lai-Wan Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices utilizing partially doped stressor film portions
- Patent number 9,634,119
- Issue date Apr 25, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,543,387
- Issue date Jan 10, 2017
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shih-Chieh Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,324,863
- Issue date Apr 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface tension modification using silane with hydrophobic function...
- Patent number 9,214,393
- Issue date Dec 15, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lai Wan Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices utilizing partially doped stressor film porti...
- Patent number 9,064,892
- Issue date Jun 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene metal gate
- Patent number 8,927,406
- Issue date Jan 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 8,735,255
- Issue date May 27, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CHIP INCLUDING A CAPACITOR ARRAY
- Publication number 20240186235
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR INCREASING GERMANIUM CONCENTRATION OF SURFACES OF A SIL...
- Publication number 20230343858
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH BLOCKING LAYER
- Publication number 20230113464
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230103483
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220238709
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Increasing Germanium Concentration of Fin and Resulting...
- Publication number 20210273080
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20210159122
- Publication date May 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH BLOCKING LAYER
- Publication number 20210119037
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20200176319
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20200006530
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190280115
- Publication date Sep 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH BLOCKING LAYER AND METHOD FOR FORMING...
- Publication number 20190097006
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN EPITAXY RE-SHAPING
- Publication number 20180366373
- Publication date Dec 20, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180190810
- Publication date Jul 5, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTION...
- Publication number 20160190320
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Lai-Wan CHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160181427
- Publication date Jun 23, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS
- Publication number 20150311314
- Publication date Oct 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150255578
- Publication date Sep 10, 2015
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-CHIEH CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20140239416
- Publication date Aug 28, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Damascene Metal Gate
- Publication number 20140191299
- Publication date Jul 10, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130295739
- Publication date Nov 7, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTION...
- Publication number 20130256663
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Lai Wan CHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTI...
- Publication number 20130049101
- Publication date Feb 28, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Wen Chu HSIAO
- H01 - BASIC ELECTRIC ELEMENTS

Wen Chu HSIAO

Person

Patents Grantslast 30 patents

Methods for increasing germanium concentration of surfaces of a sil...

Methods for increasing germanium concentration of surfaces of a sil...

Semiconductor structure with blocking layer

Fin field-effect transistor device and method of forming the same

Contact structure for FinFET semiconductor device

Fin field-effect transistor device and method of forming the same

Method for increasing germanium concentration of FIN and resulting...

Semiconductor structure with blocking layer and method for forming...

Source and drain epitaxy re-shaping

Method of forming a contact structure for a FinFET semiconductor de...

Method of fabricating a semiconductor device structure

Semiconductor device

Surface tension modification using silane with hydrophobic function...

Semiconductor devices utilizing partially doped stressor film portions

Semiconductor device and manufacturing method thereof

Semiconductor device

Surface tension modification using silane with hydrophobic function...

Semiconductor devices utilizing partially doped stressor film porti...

Dual damascene metal gate

Method of manufacturing semiconductor device

Patents Applicationslast 30 patents

INTEGRATED CHIP INCLUDING A CAPACITOR ARRAY

METHODS FOR INCREASING GERMANIUM CONCENTRATION OF SURFACES OF A SIL...

SEMICONDUCTOR STRUCTURE WITH BLOCKING LAYER

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Method for Increasing Germanium Concentration of Fin and Resulting...

Fin Field-Effect Transistor Device and Method of Forming the Same

SEMICONDUCTOR STRUCTURE WITH BLOCKING LAYER

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

Semiconductor Device and Method

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE WITH BLOCKING LAYER AND METHOD FOR FORMING...

SOURCE AND DRAIN EPITAXY RE-SHAPING

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTION...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Semiconductor device

Dual Damascene Metal Gate

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTION...

SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTI...