Wen-Chun You

Person

Dongshan Township, TW

People

Patents Grantslast 30 patents

Information Patent Grant
MRAM memory cell layout for minimizing bitcell area
- Patent number 11,800,724
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay Chuang
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 11,723,292
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yang Chang
Information Patent Grant
Manufacturing techniques and corresponding devices for magnetic tun...
- Patent number 11,653,572
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM memory cell layout for minimizing bitcell area
- Patent number 11,244,983
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for MRAM MTJ top electrode connection
- Patent number 11,075,335
- Issue date Jul 27, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing techniques and corresponding devices for magnetic tun...
- Patent number 10,937,957
- Issue date Mar 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time-programmable (OTP) implementation using magnetic junctions
- Patent number 10,878,928
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance variable memory structure and method of forming the same
- Patent number 10,868,250
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Chi Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage device having magnetic tunnel junction cells of different s...
- Patent number 10,868,234
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top electrode for device structures in interconnect
- Patent number 10,862,029
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 10,700,275
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top electrode for device structures in interconnect
- Patent number 10,510,953
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing techniques and corresponding devices for magnetic tun...
- Patent number 10,497,861
- Issue date Dec 3, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance variable memory structure and method of forming the same
- Patent number 10,388,868
- Issue date Aug 20, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Chi Tu
- G11 - INFORMATION STORAGE
Information Patent Grant
Top electrode for device structures in interconnect
- Patent number 10,276,790
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 10,199,575
- Issue date Feb 5, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of integrated circuit structure
- Patent number 10,134,807
- Issue date Nov 20, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Determining a characteristic of a monitored layer on an integrated...
- Patent number 10,043,970
- Issue date Aug 7, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunneling junction (MTJ) for improved magnet...
- Patent number 10,008,662
- Issue date Jun 26, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chun You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy bottom electrode in interconnect to reduce CMP dishing
- Patent number 9,985,075
- Issue date May 29, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top electrode for device structures in interconnect
- Patent number 9,780,302
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing techniques and corresponding devices for magnetic tun...
- Patent number 9,666,790
- Issue date May 30, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy bottom electrode in interconnect to reduce CMP dishing
- Patent number 9,502,466
- Issue date Nov 22, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top electrode for device structures in interconnect
- Patent number 9,444,045
- Issue date Sep 13, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 9,425,392
- Issue date Aug 23, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory and manufacturing method thereof
- Patent number 9,368,722
- Issue date Jun 14, 2016
- Taiwan Semiconductor Manufacturing Company Ltd.
- Sheng-Hung Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance variable memory structure and method of forming the same
- Patent number 9,349,953
- Issue date May 24, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chi Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top electrode blocking layer for RRAM device
- Patent number 9,172,036
- Issue date Oct 27, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 9,112,148
- Issue date Aug 18, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells breakdown protection
- Patent number 9,076,522
- Issue date Jul 7, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun You
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...
- Publication number 20240339144
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED MEMORY DEVICE WITH REDUCED PLASMA-INDUCED DAMAGE AND METHO...
- Publication number 20240113043
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM MEMORY CELL LAYOUT FOR MINIMIZING BITCELL AREA
- Publication number 20230380187
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay CHUANG
Information Patent Application
MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230061882
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
- Publication number 20220246843
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM MEMORY CELL LAYOUT FOR MINIMIZING BITCELL AREA
- Publication number 20220123051
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
- Publication number 20210351345
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING TECHNIQUES AND CORRESPONDING DEVICES FOR MAGNETIC TUN...
- Publication number 20210184110
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM MEMORY CELL LAYOUT FOR MINIMIZING BITCELL AREA
- Publication number 20200411590
- Publication date Dec 31, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20200335694
- Publication date Oct 22, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE HAVING MAGNETIC TUNNEL JUNCTION CELLS OF DIFFERENT S...
- Publication number 20200194662
- Publication date Jun 18, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- HARRY-HAK-LAY CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT
- Publication number 20200098983
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-TIME-PROGRAMMABLE (OTP) IMPLEMENTATION USING MAGNETIC JUNCTIONS
- Publication number 20200098440
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
- Publication number 20200098982
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING TECHNIQUES AND CORRESPONDING DEVICES FOR MAGNETIC TUN...
- Publication number 20200028072
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistance Variable Memory Structure and Method of Forming the Same
- Publication number 20190259944
- Publication date Aug 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chi Tu
- G11 - INFORMATION STORAGE
Information Patent Application
TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT
- Publication number 20190229265
- Publication date Jul 25, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20190123271
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DETERMINING A CHARACTERISTIC OF A MONITORED LAYER ON AN INTEGRATED...
- Publication number 20180175288
- Publication date Jun 21, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF INTEGRATED CIRCUIT STRUCTURE
- Publication number 20180166501
- Publication date Jun 14, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT
- Publication number 20180019390
- Publication date Jan 18, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING TECHNIQUES AND CORRESPONDING DEVICES FOR MAGNETIC TUN...
- Publication number 20170256704
- Publication date Sep 7, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20170141301
- Publication date May 18, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY BOTTOM ELECTRODE IN INTERCONNECT TO REDUCE CMP DISHING
- Publication number 20170053967
- Publication date Feb 23, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING TECHNIQUES AND CORRESPONDING DEVICES FOR MAGNETIC TUN...
- Publication number 20170018704
- Publication date Jan 19, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT
- Publication number 20160380193
- Publication date Dec 29, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistance Variable Memory Structure and Method of Forming the Same
- Publication number 20160268507
- Publication date Sep 15, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chi Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNELING JUNCTION (MTJ) FOR IMPROVED MAGNET...
- Publication number 20160268499
- Publication date Sep 15, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Wen-Chun You
- G11 - INFORMATION STORAGE
Information Patent Application
TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT
- Publication number 20160035975
- Publication date Feb 4, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20150325786
- Publication date Nov 12, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS

Wen-Chun You

Person

Patents Grantslast 30 patents

MRAM memory cell layout for minimizing bitcell area

RRAM cell structure with laterally offset BEVA/TEVA

Manufacturing techniques and corresponding devices for magnetic tun...

MRAM memory cell layout for minimizing bitcell area

Techniques for MRAM MTJ top electrode connection

Manufacturing techniques and corresponding devices for magnetic tun...

One-time-programmable (OTP) implementation using magnetic junctions

Resistance variable memory structure and method of forming the same

Storage device having magnetic tunnel junction cells of different s...

Top electrode for device structures in interconnect

RRAM cell structure with laterally offset BEVA/TEVA

Top electrode for device structures in interconnect

Manufacturing techniques and corresponding devices for magnetic tun...

Resistance variable memory structure and method of forming the same

Top electrode for device structures in interconnect

RRAM cell structure with laterally offset BEVA/TEVA

Structure and formation method of integrated circuit structure

Determining a characteristic of a monitored layer on an integrated...

Perpendicular magnetic tunneling junction (MTJ) for improved magnet...

Dummy bottom electrode in interconnect to reduce CMP dishing

Top electrode for device structures in interconnect

Manufacturing techniques and corresponding devices for magnetic tun...

Dummy bottom electrode in interconnect to reduce CMP dishing

Top electrode for device structures in interconnect

RRAM cell structure with laterally offset BEVA/TEVA

Resistive random access memory and manufacturing method thereof

Resistance variable memory structure and method of forming the same

Top electrode blocking layer for RRAM device

RRAM cell structure with laterally offset BEVA/TEVA

Memory cells breakdown protection

Patents Applicationslast 30 patents

Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...

EMBEDDED MEMORY DEVICE WITH REDUCED PLASMA-INDUCED DAMAGE AND METHO...

MRAM MEMORY CELL LAYOUT FOR MINIMIZING BITCELL AREA

MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

MRAM MEMORY CELL LAYOUT FOR MINIMIZING BITCELL AREA

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

MANUFACTURING TECHNIQUES AND CORRESPONDING DEVICES FOR MAGNETIC TUN...

MRAM MEMORY CELL LAYOUT FOR MINIMIZING BITCELL AREA

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

STORAGE DEVICE HAVING MAGNETIC TUNNEL JUNCTION CELLS OF DIFFERENT S...

TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT

ONE-TIME-PROGRAMMABLE (OTP) IMPLEMENTATION USING MAGNETIC JUNCTIONS

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

MANUFACTURING TECHNIQUES AND CORRESPONDING DEVICES FOR MAGNETIC TUN...

Resistance Variable Memory Structure and Method of Forming the Same

TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

DETERMINING A CHARACTERISTIC OF A MONITORED LAYER ON AN INTEGRATED...

STRUCTURE AND FORMATION METHOD OF INTEGRATED CIRCUIT STRUCTURE

TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT

MANUFACTURING TECHNIQUES AND CORRESPONDING DEVICES FOR MAGNETIC TUN...

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

DUMMY BOTTOM ELECTRODE IN INTERCONNECT TO REDUCE CMP DISHING

MANUFACTURING TECHNIQUES AND CORRESPONDING DEVICES FOR MAGNETIC TUN...

TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT

Resistance Variable Memory Structure and Method of Forming the Same

PERPENDICULAR MAGNETIC TUNNELING JUNCTION (MTJ) FOR IMPROVED MAGNET...

TOP ELECTRODE FOR DEVICE STRUCTURES IN INTERCONNECT

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA