Wen-Pin Peng

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a metal gate including de-oxidation of an oxidiz...
- Patent number 10,854,472
- Issue date Dec 1, 2020
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple threshold voltages using fin pitch and profile
- Patent number 10,290,634
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Wen Pin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress memorization and defect suppression techniques for NMOS tran...
- Patent number 9,905,673
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Inc.
- Wen-Pin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress memorization and defect suppression techniques for NMOS tran...
- Patent number 9,711,619
- Issue date Jul 18, 2017
- GLOBALFOUNDRIES Inc.
- Wen-Pin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming CMOS based integrated circuit products using dis...
- Patent number 9,704,759
- Issue date Jul 11, 2017
- GLOBALFOUNDRIES Inc.
- Wen Pin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned NiSi placement with improved performance and y...
- Patent number 9,607,989
- Issue date Mar 28, 2017
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOL contact metallization scheme for improved yield and device reli...
- Patent number 9,396,995
- Issue date Jul 19, 2016
- GLOBALFOUNDRIES Inc.
- Suraj K. Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming reduced thickness spacers in CMOS based integrat...
- Patent number 9,385,124
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Wen Pin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer to prevent source-drain contact encroachment
- Patent number 9,385,030
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Yong M. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with bridging films and methods of fabrica...
- Patent number 9,184,288
- Issue date Nov 10, 2015
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods of forming integrated circuits with...
- Patent number 9,123,783
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES, INC.
- Xin Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRESS MEMORIZATION AND DEFECT SUPPRESSION TECHNIQUES FOR NMOS TRAN...
- Publication number 20170278949
- Publication date Sep 28, 2017
- GLOBALFOUNDRIES INC.
- Wen-Pin PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SOURCE/DRAIN CONTACT IN REPLACEMENT METAL GATE PROCESS
- Publication number 20170207118
- Publication date Jul 20, 2017
- GLOBALFOUNDRIES INC.
- Wen Pin PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THRESHOLD VOLTAGES USING FIN PITCH AND PROFILE
- Publication number 20170207216
- Publication date Jul 20, 2017
- GLOBALFOUNDRIES INC.
- Wen Pin PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MEMORIZATION AND DEFECT SUPPRESSION TECHNIQUES FOR NMOS TRAN...
- Publication number 20170207090
- Publication date Jul 20, 2017
- GLOBALFOUNDRIES Inc.
- Wen-Pin PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CMOS BASED INTEGRATED CIRCUIT PRODUCTS USING DIS...
- Publication number 20170069547
- Publication date Mar 9, 2017
- GLOBALFOUNDRIES INC.
- Wen Pin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED NiSi PLACEMENT WITH IMPROVED PERFORMANCE AND Y...
- Publication number 20160163702
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER TO PREVENT SOURCE-DRAIN CONTACT ENCROACHMENT
- Publication number 20150318204
- Publication date Nov 5, 2015
- GLOBALFOUNDRIES INC.
- Yong M. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DE-OXIDATION OF METAL GATE FOR IMPROVED GATE PERFORMANCE
- Publication number 20150270142
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH BRIDGING FILMS AND METHODS OF FABRICA...
- Publication number 20150263169
- Publication date Sep 17, 2015
- GLOBALFOUNDRIES INC.
- Sipeng GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS WITH...
- Publication number 20140131881
- Publication date May 15, 2014
- GLOBALFOUNDRIES INC.
- Xin Wang
- H01 - BASIC ELECTRIC ELEMENTS

Wen-Pin Peng

Person

Patents Grantslast 30 patents

Method for forming a metal gate including de-oxidation of an oxidiz...

Multiple threshold voltages using fin pitch and profile

Stress memorization and defect suppression techniques for NMOS tran...

Stress memorization and defect suppression techniques for NMOS tran...

Methods of forming CMOS based integrated circuit products using dis...

Forming self-aligned NiSi placement with improved performance and y...

MOL contact metallization scheme for improved yield and device reli...

Methods of forming reduced thickness spacers in CMOS based integrat...

Spacer to prevent source-drain contact encroachment

Semiconductor structures with bridging films and methods of fabrica...

Integrated circuits and methods of forming integrated circuits with...

Patents Applicationslast 30 patents

STRESS MEMORIZATION AND DEFECT SUPPRESSION TECHNIQUES FOR NMOS TRAN...

SELF-ALIGNED SOURCE/DRAIN CONTACT IN REPLACEMENT METAL GATE PROCESS

MULTIPLE THRESHOLD VOLTAGES USING FIN PITCH AND PROFILE

STRESS MEMORIZATION AND DEFECT SUPPRESSION TECHNIQUES FOR NMOS TRAN...

METHODS OF FORMING CMOS BASED INTEGRATED CIRCUIT PRODUCTS USING DIS...

FORMING SELF-ALIGNED NiSi PLACEMENT WITH IMPROVED PERFORMANCE AND Y...

SPACER TO PREVENT SOURCE-DRAIN CONTACT ENCROACHMENT

DE-OXIDATION OF METAL GATE FOR IMPROVED GATE PERFORMANCE

SEMICONDUCTOR STRUCTURES WITH BRIDGING FILMS AND METHODS OF FABRICA...

INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS WITH...