Wen-Yue Zheng

Follow

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method to eliminate Cu dislocation for reliability and yield
- Patent number 7,897,508
- Issue date Mar 1, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Wen Yue Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device that has copper damascene i...
- Patent number 7,153,774
- Issue date Dec 26, 2006
- Intel Corporation
- Stefan Hau-Riege
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method to eliminate Cu dislocation for reliability and yield
- Publication number 20070134913
- Publication date Jun 14, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Wen Yue Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a semiconductor device that has copper damascene i...
- Publication number 20030228753
- Publication date Dec 11, 2003
- Stefan Hau-Riege
- H01 - BASIC ELECTRIC ELEMENTS