Wen Zhi GAO

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Singapore, SG

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming shallow trench isolation structures for integrate...
- Patent number 8,178,417
- Issue date May 15, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shailendra Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nested and isolated transistors with reduced impedance difference
- Patent number 8,143,651
- Issue date Mar 27, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Johnny Widodo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nested and isolated transistors with reduced impedance difference
- Patent number 7,767,577
- Issue date Aug 3, 2010
- Chartered Semiconductor Manufacturing, Ltd.
- Johnny Widodo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE
- Publication number 20100301424
- Publication date Dec 2, 2010
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Johnny WIDODO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SHALLOW TRENCH ISOLATION STRUCTURES FOR INTEGRATE...
- Publication number 20090261448
- Publication date Oct 22, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Shailendra MISHRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE
- Publication number 20090206408
- Publication date Aug 20, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Johnny WIDODO
- H01 - BASIC ELECTRIC ELEMENTS