Weng CHANG

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Gate structure of semiconductor device and method of forming same
- Patent number 12,363,974
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
Information Patent Grant
In-situ formation of metal gate modulators
- Patent number 12,183,638
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Han Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam-filling of metal gates with Si-containing layers
- Patent number 12,176,401
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 12,176,251
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,166,095
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure in semiconductor device and method of forming the same
- Patent number 12,166,074
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,659
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function control in gate structures
- Patent number 12,132,112
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching back and selective deposition of metal gate
- Patent number 12,068,393
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices including gate barrier layers
- Patent number 12,051,721
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting work function through adjusting deposition temperature
- Patent number 12,009,264
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nanosheet field-effect transistor device and method of forming
- Patent number 12,009,391
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming FinFET devices
- Patent number 11,955,528
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam-filling of metal gates with Si-containing layers
- Patent number 11,948,981
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field-effect transistor device and method of forming
- Patent number 11,935,937
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,901,362
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having dipole-inducing elements
- Patent number 11,855,098
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,855,163
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ formation of metal gate modulators
- Patent number 11,842,928
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Han Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of semiconductor device and method of forming same
- Patent number 11,824,100
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 11,810,961
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 11,804,409
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a lanthanum containing layer
- Patent number 11,699,621
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,646,311
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,502,080
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,502,081
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate barrier layer
- Patent number 11,495,661
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices, FinFET devices and methods of forming the same
- Patent number 11,489,059
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function control in gate structures
- Patent number 11,444,198
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ formation of metal gate modulators
- Patent number 11,430,698
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Han Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME
- Publication number 20250063778
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250056832
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE
- Publication number 20240395875
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR GATE AND CONTACT FORMATION
- Publication number 20240387644
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Han TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS
- Publication number 20240387647
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NFET with Aluminum-Free Work-Function Layer and Method Forming Same
- Publication number 20240379777
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES
- Publication number 20240379809
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of Semiconductor Device and Method of Forming Same
- Publication number 20240379812
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU FORMATION OF METAL GATE MODULATORS
- Publication number 20240379448
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Han Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE
- Publication number 20240371973
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices Including Gate Barrier Layers
- Publication number 20240355880
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Control In Gate Structures
- Publication number 20240347636
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjusting Work Function Through Adjusting Deposition Temperature
- Publication number 20240297080
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240282816
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINFET DEVICES
- Publication number 20240234534
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240213347
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240153952
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240113183
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP
- Publication number 20240097005
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU FORMATION OF METAL GATE MODULATORS
- Publication number 20240063061
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Han Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Seam-Filling of Metal Gates with Si-Containing Layers
- Publication number 20240021680
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of Semiconductor Device and Method of Forming Same
- Publication number 20240021697
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF
- Publication number 20240014279
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gate Structures and Methods of Forming the Same
- Publication number 20230378308
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...
- Publication number 20230369132
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR GATE AND CONTACT FORMATION
- Publication number 20230343834
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Han TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gate Structures and Methods of Forming the Same
- Publication number 20230343822
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20230335551
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yao-Teng Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device having Doped Gate Dielectric Layer and Method...
- Publication number 20230317790
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yao-Teng Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THEREOF
- Publication number 20230317859
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Gate structure of semiconductor device and method of forming same

In-situ formation of metal gate modulators

Seam-filling of metal gates with Si-containing layers

Semiconductor device with profiled work-function metal gate electro...

Semiconductor device and method

Gate structure in semiconductor device and method of forming the same

Transistor gate structures and methods of forming the same

Work function control in gate structures

Etching back and selective deposition of metal gate

Methods of forming semiconductor devices including gate barrier layers

Adjusting work function through adjusting deposition temperature

Nanosheet field-effect transistor device and method of forming

Methods of forming FinFET devices

Seam-filling of metal gates with Si-containing layers

Nanosheet field-effect transistor device and method of forming

Semiconductor device and method

Semiconductor devices having dipole-inducing elements

Semiconductor device and method

In-situ formation of metal gate modulators

Gate structure of semiconductor device and method of forming same

Transistor gate structures and methods of forming the same

Semiconductor device with profiled work-function metal gate electro...

Method for patterning a lanthanum containing layer

Semiconductor device and method of fabricating the same

Semiconductor device and method

Semiconductor device and method

Semiconductor device including gate barrier layer

Semiconductor devices, FinFET devices and methods of forming the same

Work function control in gate structures

In-situ formation of metal gate modulators

Patents Applicationslast 30 patents

GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE

SEMICONDUCTOR GATE AND CONTACT FORMATION

SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS

NFET with Aluminum-Free Work-Function Layer and Method Forming Same

TRANSISTOR GATE STRUCTURES

Gate Structure of Semiconductor Device and Method of Forming Same

IN-SITU FORMATION OF METAL GATE MODULATORS

ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE

Methods of Forming Semiconductor Devices Including Gate Barrier Layers

Work Function Control In Gate Structures

Adjusting Work Function Through Adjusting Deposition Temperature

NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

METHODS OF FORMING FINFET DEVICES

NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD

AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP

IN-SITU FORMATION OF METAL GATE MODULATORS

Seam-Filling of Metal Gates with Si-Containing Layers

Gate Structure of Semiconductor Device and Method of Forming Same

SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF

Transistor Gate Structures and Methods of Forming the Same

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

SEMICONDUCTOR GATE AND CONTACT FORMATION

Transistor Gate Structures and Methods of Forming the Same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Semiconductor Device having Doped Gate Dielectric Layer and Method...

TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THEREOF