Wenguang Shi

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 12,185,550
- Issue date Dec 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 12,137,568
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure of three-dimensional memory device
- Patent number 12,137,567
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,785,776
- Issue date Oct 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 11,758,732
- Issue date Sep 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,545,505
- Issue date Jan 3, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 11,527,547
- Issue date Dec 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure of three-dimensional memory device
- Patent number 10,930,663
- Issue date Feb 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 10,923,491
- Issue date Feb 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three- dimensional memory device
- Patent number 10,910,397
- Issue date Feb 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure of three-dimensional memory device
- Patent number 10,847,531
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 10,593,690
- Issue date Mar 17, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 10,553,604
- Issue date Feb 4, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20250024683
- Publication date Jan 16, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20250017019
- Publication date Jan 9, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240407172
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230389323
- Publication date Nov 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230363169
- Publication date Nov 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230087468
- Publication date Mar 23, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230005950
- Publication date Jan 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210134826
- Publication date May 6, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210126005
- Publication date Apr 29, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210043643
- Publication date Feb 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200295025
- Publication date Sep 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200152653
- Publication date May 14, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190067314
- Publication date Feb 28, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190057974
- Publication date Feb 21, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190043879
- Publication date Feb 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS

Wenguang Shi

Person

Patents Grantslast 30 patents

Through array contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Interconnect structure of three-dimensional memory device

Through array contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Through array contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Interconnect structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Through array contact structure of three- dimensional memory device

Interconnect structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Through array contact structure of three-dimensional memory device

Patents Applicationslast 30 patents

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE