Wenguang Shi

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making a multilevel memory stack structure using a cavity...
- Patent number 9,853,043
- Issue date Dec 26, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier replacement memory stack structure integration scheme
- Patent number 9,728,551
- Issue date Aug 8, 2017
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming 3D memory cells after word line replacement
- Patent number 9,716,101
- Issue date Jul 25, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices containing memory block bridges
- Patent number 9,679,906
- Issue date Jun 13, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device with epitaxial semiconductor pedest...
- Patent number 9,543,318
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing CMOS devices over memory...
- Patent number 9,530,790
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Zhenyu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi tier three-dimensional memory devices including vertically sh...
- Patent number 9,502,471
- Issue date Nov 22, 2016
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device with epitaxial semiconductor pedest...
- Patent number 9,449,987
- Issue date Sep 20, 2016
- SanDisk Technologies LLC
- Koji Miyata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-TIER REPLACEMENT MEMORY STACK STRUCTURE INTEGRATION SCHEME
- Publication number 20170229472
- Publication date Aug 10, 2017
- SANDISK TECHNOLOGIES INC.
- Ching-Huang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A MULTILEVEL MEMORY STACK STRUCTURE USING A CAVITY...
- Publication number 20170062454
- Publication date Mar 2, 2017
- SANDISK TECHNOLOGIES INC.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Hole Last Boxim
- Publication number 20160343718
- Publication date Nov 24, 2016
- SANDISK TECHNOLOGIES INC.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS

Wenguang Shi

Person

Patents Grantslast 30 patents

Method of making a multilevel memory stack structure using a cavity...

Multi-tier replacement memory stack structure integration scheme

Forming 3D memory cells after word line replacement

Three-dimensional memory devices containing memory block bridges

Three dimensional memory device with epitaxial semiconductor pedest...

Three-dimensional memory device containing CMOS devices over memory...

Multi tier three-dimensional memory devices including vertically sh...

Three dimensional memory device with epitaxial semiconductor pedest...

Patents Applicationslast 30 patents

MULTI-TIER REPLACEMENT MEMORY STACK STRUCTURE INTEGRATION SCHEME

METHOD OF MAKING A MULTILEVEL MEMORY STACK STRUCTURE USING A CAVITY...

Memory Hole Last Boxim