Wenliang Chen

Person

Vancouver, WA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacture and/or operation of ferroelectric memory array
- Patent number 10,885,980
- Issue date Jan 5, 2021
- AP Memory Corp., USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device
- Patent number 10,622,070
- Issue date Apr 14, 2020
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device
- Patent number 10,109,350
- Issue date Oct 23, 2018
- AP Memory Corp., USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell
- Patent number 8,890,227
- Issue date Nov 18, 2014
- AP Memory Corp, USA
- Wenliang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for bi-directional data synchronization between different cl...
- Patent number 6,956,918
- Issue date Oct 18, 2005
- Intel Corporation
- Wenliang Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Static, low-voltage fuse-based cell with high-voltage programming
- Patent number 6,903,598
- Issue date Jun 7, 2005
- Intel Corporation
- Martin Spence Denham
- G11 - INFORMATION STORAGE
Information Patent Grant
Asynchronous hidden refresh of semiconductor memory
- Patent number 6,826,106
- Issue date Nov 30, 2004
- Cypress Semiconductor Corp.
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Asynchronous hidden refresh of semiconductor memory
- Patent number 6,625,077
- Issue date Sep 23, 2003
- Cascade Semiconductor Corporation
- Wenliang Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low-power, high-density semiconductor memory device
- Patent number 6,594,195
- Issue date Jul 15, 2003
- Cascade Semiconductor Corporation
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Low leakage current SRAM array
- Patent number 6,560,139
- Issue date May 6, 2003
- Intel Corporation
- Lin Ma
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20190147951
- Publication date May 16, 2019
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20190035465
- Publication date Jan 31, 2019
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20180033486
- Publication date Feb 1, 2018
- AP Memory Corporation, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL
- Publication number 20140319592
- Publication date Oct 30, 2014
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Asynchronous hidden refresh of semiconductor memory
- Publication number 20040047228
- Publication date Mar 11, 2004
- Cascade Semiconductor Corporation
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Static, low-voltage fuse-based cell with high-voltage programming
- Publication number 20030218492
- Publication date Nov 27, 2003
- Intel Corporation
- Martin Spence Denham
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE ANTI-FUSE STRUCTURE UTILIZING HIGH VOLTAGE TRANSISTORS
- Publication number 20030201819
- Publication date Oct 30, 2003
- Bo Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asynchronous hidden refresh of semiconductor memory
- Publication number 20030072206
- Publication date Apr 17, 2003
- Wenliang Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Low-power, high-density semiconductor memory device
- Publication number 20030053329
- Publication date Mar 20, 2003
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Method for bi-directional data synchronization between different cl...
- Publication number 20030002606
- Publication date Jan 2, 2003
- Wenliang Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Low leakage current SRAM array
- Publication number 20020122329
- Publication date Sep 5, 2002
- Lin Ma
- G11 - INFORMATION STORAGE

Wenliang Chen

Person

Patents Grantslast 30 patents

Method of manufacture and/or operation of ferroelectric memory array

Ferroelectric memory device

Ferroelectric memory device

Memory cell

Method for bi-directional data synchronization between different cl...

Static, low-voltage fuse-based cell with high-voltage programming

Asynchronous hidden refresh of semiconductor memory

Asynchronous hidden refresh of semiconductor memory

Low-power, high-density semiconductor memory device

Low leakage current SRAM array

Patents Applicationslast 30 patents

FERROELECTRIC MEMORY DEVICE

FERROELECTRIC MEMORY DEVICE

FERROELECTRIC MEMORY DEVICE

MEMORY CELL

Asynchronous hidden refresh of semiconductor memory

Static, low-voltage fuse-based cell with high-voltage programming

OXIDE ANTI-FUSE STRUCTURE UTILIZING HIGH VOLTAGE TRANSISTORS

Asynchronous hidden refresh of semiconductor memory

Low-power, high-density semiconductor memory device

Method for bi-directional data synchronization between different cl...

Low leakage current SRAM array