Wenpin Lu

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile memory device and method of forming the same
- Patent number 8,330,232
- Issue date Dec 11, 2012
- Macronix International Co., Ltd.
- Shao Hong Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design tool for charge trapping memory using simulated programming...
- Patent number 7,971,177
- Issue date Jun 28, 2011
- Macronix International Co., Ltd.
- Shaw Hung Ku
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Flash memory having insulating liners between source/drain lines an...
- Patent number 7,889,556
- Issue date Feb 15, 2011
- Macronix International Co., Ltd.
- Shaw Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory having insulating liners between source/drain lines an...
- Patent number 7,668,010
- Issue date Feb 23, 2010
- Macronix International Co., Ltd.
- Shaw Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device having a nitride barrier to reduce the f...
- Patent number 7,400,011
- Issue date Jul 15, 2008
- Macronix International Co. Ltd.
- Uway Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hole annealing methods of non-volatile memory cells
- Patent number 7,301,818
- Issue date Nov 27, 2007
- Macronix International Co., Ltd.
- Wenpin Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device having a nitride barrier to reduce the f...
- Patent number 7,199,007
- Issue date Apr 3, 2007
- Macronix International Co., Ltd.
- Uway Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a memory device having a self-aligned contact
- Patent number 6,960,506
- Issue date Nov 1, 2005
- Macronix International Co., Ltd.
- Hung-Yu Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing charge loss for nonvolatile memory
- Patent number 6,746,968
- Issue date Jun 8, 2004
- Macronix International Co., Ltd.
- Uway Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current source component with process tracking characteristics for...
- Patent number 6,614,687
- Issue date Sep 2, 2003
- Macronix International Co., Ltd.
- Ming-Shang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Auto-stopped page soft-programming method with voltage limited comp...
- Patent number 6,363,013
- Issue date Mar 26, 2002
- Macronix International Co., Ltd.
- Wenpin Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for programming of flash EPROM memory
- Patent number 6,166,955
- Issue date Dec 26, 2000
- Macronix International Co., Ltd.
- Wenpin Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Virtual ground flash cell with asymmetrically placed source and dra...
- Patent number 6,130,452
- Issue date Oct 10, 2000
- Macronix International Co., Ltd.
- Wenpin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for suppressing bit line column leakage during er...
- Patent number 6,055,190
- Issue date Apr 25, 2000
- Macronix International Co., Ltd.
- Wenpin Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and circuit for substrate current induced hot e-injection (S...
- Patent number 6,031,766
- Issue date Feb 29, 2000
- Macronix International Co., Ltd.
- Chia-Shing Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming an asymmetric bird's beak cell for a flash EEPROM
- Patent number 5,963,808
- Issue date Oct 5, 1999
- Macronix International Co., Ltd.
- Wenpin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and circuit for substrate current induced hot e.sup.- inject...
- Patent number 5,912,845
- Issue date Jun 15, 1999
- Macronix International Co., Ltd.
- Chia-Shing Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Virtual ground flash cell with asymmetrically placed source and dra...
- Patent number 5,837,584
- Issue date Nov 17, 1998
- Macronix International Co., Ltd.
- Wenpin Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AN...
- Publication number 20100120210
- Publication date May 13, 2010
- Macronix International Co., Ltd.
- SHAW-HUNG KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOOL FOR CHARGE TRAPPING MEMORY USING SIMULATED PROGRAMMING OPERATIONS
- Publication number 20090276737
- Publication date Nov 5, 2009
- Macronix International Co., Ltd.
- Shaw Hung Ku
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AN...
- Publication number 20090213656
- Publication date Aug 27, 2009
- Macronix International Co., Ltd.
- Shaw Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory device having a nitride barrier to reduce the f...
- Publication number 20070155100
- Publication date Jul 5, 2007
- MACRONIX INTERNATIONAL CO., LTD
- Uway Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hole annealing methods of non-volatile memory cells
- Publication number 20070058440
- Publication date Mar 15, 2007
- Macronix International Co., Ltd.
- Wenpin Lu
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile memory device and method of forming the same
- Publication number 20070040211
- Publication date Feb 22, 2007
- MACRONIX INTERNATIONAL CO., LTD
- Shao Hong Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a memory device having a self-aligned contact
- Publication number 20050106819
- Publication date May 19, 2005
- Hung-Yu Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT SOURCE COMPONENT WITH PROCESS TRACKING CHARACTERISTICS FOR...
- Publication number 20020163835
- Publication date Nov 7, 2002
- MACRONIX INTERNATIONAL CO., LTD
- Ming-Shang Chen
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Nonvolatile memory device and method of forming the same

Design tool for charge trapping memory using simulated programming...

Flash memory having insulating liners between source/drain lines an...

Flash memory having insulating liners between source/drain lines an...

Non-volatile memory device having a nitride barrier to reduce the f...

Hole annealing methods of non-volatile memory cells

Non-volatile memory device having a nitride barrier to reduce the f...

Method of fabricating a memory device having a self-aligned contact

Method of reducing charge loss for nonvolatile memory

Current source component with process tracking characteristics for...

Auto-stopped page soft-programming method with voltage limited comp...

Apparatus and method for programming of flash EPROM memory

Virtual ground flash cell with asymmetrically placed source and dra...

Device and method for suppressing bit line column leakage during er...

Method and circuit for substrate current induced hot e-injection (S...

Method of forming an asymmetric bird's beak cell for a flash EEPROM

Method and circuit for substrate current induced hot e.sup.- inject...

Virtual ground flash cell with asymmetrically placed source and dra...

Patents Applicationslast 30 patents

FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AN...

TOOL FOR CHARGE TRAPPING MEMORY USING SIMULATED PROGRAMMING OPERATIONS

FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AN...

Non-volatile memory device having a nitride barrier to reduce the f...

Hole annealing methods of non-volatile memory cells

Nonvolatile memory device and method of forming the same

Method of fabricating a memory device having a self-aligned contact

CURRENT SOURCE COMPONENT WITH PROCESS TRACKING CHARACTERISTICS FOR...