Werner A Rausch

Person

Stormville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical superconducting capacitors for transmon qubits
- Patent number 10,552,758
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Jared Barney Hertzberg
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical superconducting capacitors for transmon qubits
- Patent number 10,445,651
- Issue date Oct 15, 2019
- International Business Machines Corporation
- Jared Barney Hertzberg
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical superconducting capacitors for transmon qubits
- Patent number 10,068,184
- Issue date Sep 4, 2018
- International Business Machines Corporation
- Jared Barney Hertzberg
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Faceted structure formed by self-limiting etch
- Patent number 9,812,394
- Issue date Nov 7, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source drain epitaxy
- Patent number 9,437,496
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance embedded strap for a trench capacitor
- Patent number 9,029,862
- Issue date May 12, 2015
- International Business Machines Corporation
- Karen A. Nummy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split level shallow trench isolation for area efficient body contac...
- Patent number 8,680,617
- Issue date Mar 25, 2014
- International Business Machines Corporation
- Ying Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance embedded strap for a trench capacitor
- Patent number 8,507,915
- Issue date Aug 13, 2013
- International Business Machines Corporation
- Karen A. Nummy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS diodes with dual gate conductors, and methods for forming the...
- Patent number 8,222,702
- Issue date Jul 17, 2012
- International Business Machines Corporation
- David M. Onsongo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 8,067,805
- Issue date Nov 29, 2011
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of creating asymmetric field-effect-transistors
- Patent number 8,017,483
- Issue date Sep 13, 2011
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for fabricating self-aligned metal contacts
- Patent number 7,981,751
- Issue date Jul 19, 2011
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2-T SRAM cell structure and method
- Patent number 7,880,238
- Issue date Feb 1, 2011
- International Business Machines Corporation
- Qingqing Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 7,816,237
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming multiple self-aligned gate stacks...
- Patent number 7,790,541
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS diodes with dual gate conductors, and methods for forming the...
- Patent number 7,737,500
- Issue date Jun 15, 2010
- International Business Machines Corporation
- David M. Onsongo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS well structure and method of forming the same
- Patent number 7,709,365
- Issue date May 4, 2010
- International Business Machines Corporation
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised source drain mosfet with amorphous notched gate cap layer wi...
- Patent number 7,700,425
- Issue date Apr 20, 2010
- International Business Machines Corporation
- Tina J. Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for making strained channel field effect trans...
- Patent number 7,645,656
- Issue date Jan 12, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for fabricating self-aligned metal contacts
- Patent number 7,615,831
- Issue date Nov 10, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS circuits including a passive element having a low end resistance
- Patent number 7,491,598
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a body-contacted finfet
- Patent number 7,485,520
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI stress modification by nitrogen plasma treatment for improving...
- Patent number 7,479,688
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 7,402,870
- Issue date Jul 22, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS circuits including a passive element having a low end resistance
- Patent number 7,361,959
- Issue date Apr 22, 2008
- International Business Machines Corporation
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ doped embedded sige extension and source/drain for enhanced...
- Patent number 7,176,481
- Issue date Feb 13, 2007
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFETS exhibiting reduced floating-body effects
- Patent number 7,163,866
- Issue date Jan 16, 2007
- International Business Machines Corporation
- Fariborz Assaderaghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for making strained channel field effect trans...
- Patent number 7,135,724
- Issue date Nov 14, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS well structure and method of forming the same
- Patent number 7,132,323
- Issue date Nov 7, 2006
- International Business Machines Corporation
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical treatment to retard diffusion in a semiconductor overlayer
- Patent number 7,071,103
- Issue date Jul 4, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL SUPERCONDUCTING CAPACITORS FOR TRANSMON QUBITS
- Publication number 20190228334
- Publication date Jul 25, 2019
- International Business Machines Corporation
- Jared Barney Hertzberg
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VERTICAL SUPERCONDUCTING CAPACITORS FOR TRANSMON QUBITS
- Publication number 20190130302
- Publication date May 2, 2019
- International Business Machines Corporation
- Jared Barney Hertzberg
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FACETED STRUCTURE FORMED BY SELF-LIMITING ETCH
- Publication number 20170103947
- Publication date Apr 13, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY FINFET DEVICES WITH UNMERGED FINS
- Publication number 20150333145
- Publication date Nov 19, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE EMBEDDED STRAP FOR A TRENCH CAPACITOR
- Publication number 20130260520
- Publication date Oct 3, 2013
- Karen A. Nummy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE EMBEDDED STRAP FOR A TRENCH CAPACITOR
- Publication number 20130134490
- Publication date May 30, 2013
- International Business Machines Corporation
- Karen A. Nummy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT LEVEL SHALLOW TRENCH ISOLATION FOR AREA EFFICIENT BODY CONTAC...
- Publication number 20110079851
- Publication date Apr 7, 2011
- International Business Machines Corporation
- YING LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CREATING ASYMMETRIC FIELD-EFFECT-TRANSISTORS
- Publication number 20100330763
- Publication date Dec 30, 2010
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DIODES WITH DUAL GATE CONDUCTORS, AND METHODS FOR FORMING THE...
- Publication number 20100252881
- Publication date Oct 7, 2010
- International Business Machines Corporation
- David M. Onsongo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FABRICATING SELF-ALIGNED METAL CONTACTS
- Publication number 20100035400
- Publication date Feb 11, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2-T SRAM CELL STRUCTURE AND METHOD
- Publication number 20090256205
- Publication date Oct 15, 2009
- International Business Machines Corporation
- Qingqing Liang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND STRUCTURE FOR FORMING MULTIPLE SELF-ALIGNED GATE STACKS...
- Publication number 20090140347
- Publication date Jun 4, 2009
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FABRICATING SELF-ALIGNED METAL CONTACTS
- Publication number 20090108378
- Publication date Apr 30, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRESS LINER STRUCTURE HAVING SUBSTANTIALLY PLANAR INTERFACE B...
- Publication number 20090090974
- Publication date Apr 9, 2009
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BODY-CONTACTED FINFET
- Publication number 20090008705
- Publication date Jan 8, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...
- Publication number 20080233687
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...
- Publication number 20080230840
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS CIRCUITS INCLUDING A PASSIVE ELEMENT HAVING A LOW END RESISTANCE
- Publication number 20080096342
- Publication date Apr 24, 2008
- International Business Machines Corporation
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED CMOS DIODES WITH DUAL GATE CONDUCTORS, AND METHODS FOR FOR...
- Publication number 20070252212
- Publication date Nov 1, 2007
- International Business Machines Corporation
- David M. Onsongo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS CIRCUITS INCORPORATING PASSIVE ELEMENTS OF LOW CONTACT RESISTA...
- Publication number 20070120195
- Publication date May 31, 2007
- International Business Machines Corporation
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS WELL STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20070045749
- Publication date Mar 1, 2007
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacture of raised source drain MOSFET with top notche...
- Publication number 20070037356
- Publication date Feb 15, 2007
- Tina J. Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...
- Publication number 20060292779
- Publication date Dec 28, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU DOPED EMBEDDED SIGE EXTENSION AND SOURCE/DRAIN FOR ENHANCED...
- Publication number 20060151837
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...
- Publication number 20060076627
- Publication date Apr 13, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...
- Publication number 20060065914
- Publication date Mar 30, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER
- Publication number 20060024934
- Publication date Feb 2, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS well structure and method of forming the same
- Publication number 20050106800
- Publication date May 19, 2005
- International Business Machines Corporation
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND MANUFACTURE OF THIN SILICON ON INSULATOR (SOI) WITH RECE...
- Publication number 20050090066
- Publication date Apr 28, 2005
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURE OF RAISED SOURCE DRAIN MOSFET WITH TOP NOTCHE...
- Publication number 20050054169
- Publication date Mar 10, 2005
- International Business Machines Corporation
- Tina J. Wagner
- H01 - BASIC ELECTRIC ELEMENTS

Werner A Rausch

Person

Patents Grantslast 30 patents

Vertical superconducting capacitors for transmon qubits

Vertical superconducting capacitors for transmon qubits

Vertical superconducting capacitors for transmon qubits

Faceted structure formed by self-limiting etch

Merged source drain epitaxy

Low resistance embedded strap for a trench capacitor

Split level shallow trench isolation for area efficient body contac...

Low resistance embedded strap for a trench capacitor

CMOS diodes with dual gate conductors, and methods for forming the...

Ultra shallow junction formation by epitaxial interface limited dif...

Method of creating asymmetric field-effect-transistors

Structure and method for fabricating self-aligned metal contacts

2-T SRAM cell structure and method

Ultra shallow junction formation by epitaxial interface limited dif...

Method and structure for forming multiple self-aligned gate stacks...

CMOS diodes with dual gate conductors, and methods for forming the...

CMOS well structure and method of forming the same

Raised source drain mosfet with amorphous notched gate cap layer wi...

Structure and method for making strained channel field effect trans...

Structure and method for fabricating self-aligned metal contacts

CMOS circuits including a passive element having a low end resistance

Method of manufacturing a body-contacted finfet

STI stress modification by nitrogen plasma treatment for improving...

Ultra shallow junction formation by epitaxial interface limited dif...

CMOS circuits including a passive element having a low end resistance

In situ doped embedded sige extension and source/drain for enhanced...

SOI MOSFETS exhibiting reduced floating-body effects

Structure and method for making strained channel field effect trans...

CMOS well structure and method of forming the same

Chemical treatment to retard diffusion in a semiconductor overlayer

Patents Applicationslast 30 patents

VERTICAL SUPERCONDUCTING CAPACITORS FOR TRANSMON QUBITS

VERTICAL SUPERCONDUCTING CAPACITORS FOR TRANSMON QUBITS

FACETED STRUCTURE FORMED BY SELF-LIMITING ETCH

HIGH DENSITY FINFET DEVICES WITH UNMERGED FINS

LOW RESISTANCE EMBEDDED STRAP FOR A TRENCH CAPACITOR

LOW RESISTANCE EMBEDDED STRAP FOR A TRENCH CAPACITOR

SPLIT LEVEL SHALLOW TRENCH ISOLATION FOR AREA EFFICIENT BODY CONTAC...

METHOD OF CREATING ASYMMETRIC FIELD-EFFECT-TRANSISTORS

CMOS DIODES WITH DUAL GATE CONDUCTORS, AND METHODS FOR FORMING THE...

STRUCTURE AND METHOD FOR FABRICATING SELF-ALIGNED METAL CONTACTS

2-T SRAM CELL STRUCTURE AND METHOD

METHOD AND STRUCTURE FOR FORMING MULTIPLE SELF-ALIGNED GATE STACKS...

STRUCTURE AND METHOD FOR FABRICATING SELF-ALIGNED METAL CONTACTS

DUAL STRESS LINER STRUCTURE HAVING SUBSTANTIALLY PLANAR INTERFACE B...

BODY-CONTACTED FINFET

ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...

ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...

CMOS CIRCUITS INCLUDING A PASSIVE ELEMENT HAVING A LOW END RESISTANCE

IMPROVED CMOS DIODES WITH DUAL GATE CONDUCTORS, AND METHODS FOR FOR...

CMOS CIRCUITS INCORPORATING PASSIVE ELEMENTS OF LOW CONTACT RESISTA...

CMOS WELL STRUCTURE AND METHOD OF FORMING THE SAME

Method of manufacture of raised source drain MOSFET with top notche...

STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...

IN SITU DOPED EMBEDDED SIGE EXTENSION AND SOURCE/DRAIN FOR ENHANCED...

ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...

STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...

CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER

CMOS well structure and method of forming the same

METHOD AND MANUFACTURE OF THIN SILICON ON INSULATOR (SOI) WITH RECE...

METHOD OF MANUFACTURE OF RAISED SOURCE DRAIN MOSFET WITH TOP NOTCHE...