Werner Schustereder

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device fabricated using channeling implant
- Patent number 12,057,316
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation region and method of manuf...
- Patent number 11,764,063
- Issue date Sep 19, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,764,296
- Issue date Sep 19, 2023
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for processing a semiconductor substrate
- Patent number 11,557,506
- Issue date Jan 17, 2023
- Infineon Technologies AG
- Werner Schustereder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation layer and method of manufa...
- Patent number 11,552,172
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a superjunction device
- Patent number 11,342,187
- Issue date May 24, 2022
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for neutron transmutation doping of semiconduc...
- Patent number 11,250,966
- Issue date Feb 15, 2022
- Infineon Technologies AG
- Markus Bina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ion implantation method, ion implantation apparatus and semiconduct...
- Patent number 11,195,695
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing a semiconductor d...
- Patent number 11,171,230
- Issue date Nov 9, 2021
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device by using ion beam te...
- Patent number 11,043,384
- Issue date Jun 22, 2021
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with steep junctions and methods of manufactu...
- Patent number 10,998,402
- Issue date May 4, 2021
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for processing a silicon carbide wafer, and a silicon carbi...
- Patent number 10,903,078
- Issue date Jan 26, 2021
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a superjunction device
- Patent number 10,679,855
- Issue date Jun 9, 2020
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for ion implantation
- Patent number 10,622,268
- Issue date Apr 14, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a device doping region of an electrical...
- Patent number 10,615,039
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing a sheet resistance in an electronic device, and...
- Patent number 10,573,533
- Issue date Feb 25, 2020
- Infineon Technologies AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC-based superjunction semiconductor device
- Patent number 10,541,301
- Issue date Jan 21, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a variable carbon concentration
- Patent number 10,529,838
- Issue date Jan 7, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with steep junctions and methods of manufactu...
- Patent number 10,475,881
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for neutron transmutation doping of semiconduc...
- Patent number 10,468,148
- Issue date Nov 5, 2019
- Infineon Technologies AG
- Markus Bina
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Methods for forming a semiconductor device using tilted reactive io...
- Patent number 10,366,895
- Issue date Jul 30, 2019
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming recombination centers in a semiconductor device
- Patent number 10,347,491
- Issue date Jul 9, 2019
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and assembly for determining the carbon content in silicon
- Patent number 10,317,338
- Issue date Jun 11, 2019
- Infineon Technologies AG
- Naveen Goud Ganagona
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device containing oxygen-related thermal donors
- Patent number 10,192,955
- Issue date Jan 29, 2019
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor dev...
- Patent number 10,128,328
- Issue date Nov 13, 2018
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a superjunction device
- Patent number 10,109,489
- Issue date Oct 23, 2018
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a semiconductor device and a semiconductor device
- Patent number 10,096,677
- Issue date Oct 9, 2018
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming electrode trenches by using a directed ion beam and semicon...
- Patent number 10,083,835
- Issue date Sep 25, 2018
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, implantation apparatus for implanting protons...
- Patent number 10,074,715
- Issue date Sep 11, 2018
- Infineon Technologies Austria AG
- Werner Schustereder
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for implanting ions into a semiconductor substrate and an im...
- Patent number 10,037,887
- Issue date Jul 31, 2018
- Infineon Technologies AG
- Michael Brugger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20230317456
- Publication date Oct 5, 2023
- INFINEON TECHNOLOGIES AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH METALLIC INTERFACE LAYERS AND METHOD OF...
- Publication number 20230253454
- Publication date Aug 10, 2023
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL NITRIDE LAYER AND A METHOD OF MANUF...
- Publication number 20230238442
- Publication date Jul 27, 2023
- INFINEON TECHNOLOGIES AG
- Ravi Keshav JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A METAL SILICIDE LAYER ABOVE A SILICON CARB...
- Publication number 20230215729
- Publication date Jul 6, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20230087353
- Publication date Mar 23, 2023
- INFINEON TECHNOLOGIES AG
- Werner Schustereder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230083106
- Publication date Mar 16, 2023
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING OHMIC CONTACTS ON A SILICON CARBIDE (SIC) S...
- Publication number 20230024105
- Publication date Jan 26, 2023
- INFINEON TECHNOLOGIES AG
- Werner SCHUSTEREDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET WITH REDUCED ON-RESISTANCE
- Publication number 20220262906
- Publication date Aug 18, 2022
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220254892
- Publication date Aug 11, 2022
- Jyotshna Bhandari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20220029013
- Publication date Jan 27, 2022
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROCESSING A SEMICONDUCTOR SUBSTRATE
- Publication number 20210159115
- Publication date May 27, 2021
- INFINEON TECHNOLOGIES AG
- Werner SCHUSTEREDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Compensation Layer and Method of Manufa...
- Publication number 20210013310
- Publication date Jan 14, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH COMPENSATION REGION AND METHOD OF MANUF...
- Publication number 20200381253
- Publication date Dec 3, 2020
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Superjunction Device
- Publication number 20200243340
- Publication date Jul 30, 2020
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...
- Publication number 20200005957
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Markus BINA
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Device and Method of Manufacturing a Semiconductor De...
- Publication number 20190385852
- Publication date Dec 19, 2019
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH STEEP JUNCTIONS AND METHODS OF MANUFACTU...
- Publication number 20190378895
- Publication date Dec 12, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Processing a Silicon Carbide Wafer, and a Silicon Carbi...
- Publication number 20190362972
- Publication date Nov 28, 2019
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A SEMICONDUCTOR DEVICE USING TILTED REACTIVE IO...
- Publication number 20190295848
- Publication date Sep 26, 2019
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacturing a Semiconductor D...
- Publication number 20190123193
- Publication date Apr 25, 2019
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion Implantation Method, Ion Implantation Apparatus and Semiconduct...
- Publication number 20190066977
- Publication date Feb 28, 2019
- INFINEON TECHNOLOGIES AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion Implantation Apparatus and Method of Manufacturing Semiconducto...
- Publication number 20190051488
- Publication date Feb 14, 2019
- INFINEON TECHNOLOGIES AG
- Werner Schustereder
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for Producing a Superjunction Device
- Publication number 20190051529
- Publication date Feb 14, 2019
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING A SHEET RESISTANCE IN AN ELECTRONIC DEVICE, AND...
- Publication number 20190013210
- Publication date Jan 10, 2019
- INFINEON TECHNOLOGIES AG
- Edward FUERGUT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...
- Publication number 20180308698
- Publication date Oct 25, 2018
- INFINEON TECHNOLOGIES AG
- Markus Bina
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Application
Semiconductor Device Having a Device Doping Region of an Electrical...
- Publication number 20180240672
- Publication date Aug 23, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Recombination Centers in a Semiconductor Device
- Publication number 20180182629
- Publication date Jun 28, 2018
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC-Based Superjunction Semiconductor Device
- Publication number 20180138266
- Publication date May 17, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Devices and Semiconductor Dev...
- Publication number 20180122895
- Publication date May 3, 2018
- INFINEON TECHNOLOGIES AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Variable Carbon Concentration
- Publication number 20180102423
- Publication date Apr 12, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Werner Schustereder

Person

Patents Grantslast 30 patents

Semiconductor device fabricated using channeling implant

Silicon carbide device with compensation region and method of manuf...

Method for manufacturing a semiconductor device

Methods for processing a semiconductor substrate

Silicon carbide device with compensation layer and method of manufa...

Method for producing a superjunction device

Apparatus and method for neutron transmutation doping of semiconduc...

Ion implantation method, ion implantation apparatus and semiconduct...

Semiconductor device and method for manufacturing a semiconductor d...

Method of manufacturing a semiconductor device by using ion beam te...

Semiconductor devices with steep junctions and methods of manufactu...

Methods for processing a silicon carbide wafer, and a silicon carbi...

Method for producing a superjunction device

Apparatus and method for ion implantation

Semiconductor device having a device doping region of an electrical...

Method of reducing a sheet resistance in an electronic device, and...

SiC-based superjunction semiconductor device

Semiconductor device having a variable carbon concentration

Semiconductor devices with steep junctions and methods of manufactu...

Apparatus and method for neutron transmutation doping of semiconduc...

Methods for forming a semiconductor device using tilted reactive io...

Forming recombination centers in a semiconductor device

Method and assembly for determining the carbon content in silicon

Semiconductor device containing oxygen-related thermal donors

Method of manufacturing semiconductor devices and semiconductor dev...

Method for producing a superjunction device

Methods for forming a semiconductor device and a semiconductor device

Forming electrode trenches by using a directed ion beam and semicon...

Semiconductor wafer, implantation apparatus for implanting protons...

Method for implanting ions into a semiconductor substrate and an im...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

SILICON CARBIDE DEVICE WITH METALLIC INTERFACE LAYERS AND METHOD OF...

SEMICONDUCTOR DEVICE WITH METAL NITRIDE LAYER AND A METHOD OF MANUF...

METHOD OF MANUFACTURING A METAL SILICIDE LAYER ABOVE A SILICON CARB...

Power Semiconductor Device and Method of Producing a Power Semicond...

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING OHMIC CONTACTS ON A SILICON CARBIDE (SIC) S...

SIC MOSFET WITH REDUCED ON-RESISTANCE

SEMICONDUCTOR POWER DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

METHODS FOR PROCESSING A SEMICONDUCTOR SUBSTRATE

Silicon Carbide Device with Compensation Layer and Method of Manufa...

SILICON CARBIDE DEVICE WITH COMPENSATION REGION AND METHOD OF MANUF...

Method for Producing a Superjunction Device

APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...

Semiconductor Device and Method of Manufacturing a Semiconductor De...

SEMICONDUCTOR DEVICES WITH STEEP JUNCTIONS AND METHODS OF MANUFACTU...

Methods for Processing a Silicon Carbide Wafer, and a Silicon Carbi...

METHODS FOR FORMING A SEMICONDUCTOR DEVICE USING TILTED REACTIVE IO...

Semiconductor Device and Method for Manufacturing a Semiconductor D...

Ion Implantation Method, Ion Implantation Apparatus and Semiconduct...

Ion Implantation Apparatus and Method of Manufacturing Semiconducto...

Method for Producing a Superjunction Device

METHOD OF REDUCING A SHEET RESISTANCE IN AN ELECTRONIC DEVICE, AND...

APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...

Semiconductor Device Having a Device Doping Region of an Electrical...

Forming Recombination Centers in a Semiconductor Device

SiC-Based Superjunction Semiconductor Device

Method of Manufacturing Semiconductor Devices and Semiconductor Dev...

Semiconductor Device Having a Variable Carbon Concentration