Wesley J. Skinner

Person

Andover, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for modifying features of a workpiece using a gas cluster i...
- Patent number 7,626,183
- Issue date Dec 1, 2009
- TEL Epion Inc.
- Reinhard Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of doped regions and/or ultra-shallow junctions in semico...
- Patent number 7,410,890
- Issue date Aug 12, 2008
- TEL Epion Inc.
- Allen R. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of ultra-shallow junctions by gas-cluster ion irradiation
- Patent number 7,396,745
- Issue date Jul 8, 2008
- TEL Epion Inc.
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming doped and un-doped strained semiconductor materi...
- Patent number 7,259,036
- Issue date Aug 21, 2007
- TEL Epion Inc.
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GCIB processing to improve interconnection vias and improved interc...
- Patent number 6,812,147
- Issue date Nov 2, 2004
- Epion Corporation
- Wesley J. Skinner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced etching/smoothing of dielectric surfaces
- Patent number 6,624,081
- Issue date Sep 23, 2003
- Epion Corporation
- Jerald P. Dykstra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for smoothing thin conductive films by gas clu...
- Patent number 6,613,240
- Issue date Sep 2, 2003
- Epion Corporation
- Wesley J. Skinner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Enhanced etching/smoothing of dielectric surfaces
- Patent number 6,331,227
- Issue date Dec 18, 2001
- Epion Corporation
- Jerald P. Dykstra
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR MODIFYING FEATURES OF A WORKPIECE USING A GAS CLUSTER I...
- Publication number 20090057574
- Publication date Mar 5, 2009
- TOKYO ELECTRON LIMITED
- Reinhard Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INTRODUCING MATERIAL INTO A SUBSTRATE BY GAS-CLUSTER ION...
- Publication number 20080245974
- Publication date Oct 9, 2008
- TEL Epion Inc.
- Allen R. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement gate field effect transistor with germanium or SiGe cha...
- Publication number 20060292762
- Publication date Dec 28, 2006
- Epion Corporation
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of doped regions and/or ultra-shallow junctions in semico...
- Publication number 20050277246
- Publication date Dec 15, 2005
- Epion Corporation
- Allen R. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of ultra-shallow junctions by gas-cluster ion irradiation
- Publication number 20050202657
- Publication date Sep 15, 2005
- Epion Corporation
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming doped and un-doped strained semiconductor and se...
- Publication number 20050181621
- Publication date Aug 18, 2005
- Epion Corporation
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GCIB processing to improve interconnection vias and improved interc...
- Publication number 20030073314
- Publication date Apr 17, 2003
- Epion Corporation
- Wesley J. Skinner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for smoothing thin conductive films by gas clu...
- Publication number 20020068132
- Publication date Jun 6, 2002
- Wesley J. Skinner
- B82 - NANO-TECHNOLOGY
Information Patent Application
Enhanced etching/smoothing of dielectric surfaces
- Publication number 20020016079
- Publication date Feb 7, 2002
- Jerald P. Dykstra
- H01 - BASIC ELECTRIC ELEMENTS

Wesley J. Skinner

Person

Patents Grantslast 30 patents

Methods for modifying features of a workpiece using a gas cluster i...

Formation of doped regions and/or ultra-shallow junctions in semico...

Formation of ultra-shallow junctions by gas-cluster ion irradiation

Methods of forming doped and un-doped strained semiconductor materi...

GCIB processing to improve interconnection vias and improved interc...

Enhanced etching/smoothing of dielectric surfaces

Method and apparatus for smoothing thin conductive films by gas clu...

Enhanced etching/smoothing of dielectric surfaces

Patents Applicationslast 30 patents

METHODS FOR MODIFYING FEATURES OF A WORKPIECE USING A GAS CLUSTER I...

METHOD OF INTRODUCING MATERIAL INTO A SUBSTRATE BY GAS-CLUSTER ION...

Replacement gate field effect transistor with germanium or SiGe cha...

Formation of doped regions and/or ultra-shallow junctions in semico...

Formation of ultra-shallow junctions by gas-cluster ion irradiation

Methods of forming doped and un-doped strained semiconductor and se...

GCIB processing to improve interconnection vias and improved interc...

Method and apparatus for smoothing thin conductive films by gas clu...

Enhanced etching/smoothing of dielectric surfaces