Wilbur D. Johnston Jr.

Person

Mendham, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semi-insulated indium phosphide based compositions
- Patent number 6,211,539
- Issue date Apr 3, 2001
- Lucent Technologies Inc.
- Wilbur Dexter Johnston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for making integrated laser/modulators
- Patent number 6,101,204
- Issue date Aug 8, 2000
- Wilbur Dexter Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling dopant incorporation in high resistivity In-b...
- Patent number 4,999,315
- Issue date Mar 12, 1991
- AT&T Bell Laboratories
- Wilbur D. Johnston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a semiconductor-insulator-semiconductor structure
- Patent number 4,935,382
- Issue date Jun 19, 1990
- American Telephone and Telegraph Company
- Wilbur D. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices employing high resistivity in-based compound...
- Patent number 4,888,624
- Issue date Dec 19, 1989
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Wilbur D. Johnston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal films of cubic group II fluorides on semiconductor c...
- Patent number 4,878,956
- Issue date Nov 7, 1989
- American Telephone and Telegraph Company AT&T Bell Laboratories
- Wilbur D. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating single crystal films of cubic group II fluori...
- Patent number 4,870,032
- Issue date Sep 26, 1989
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Wilbur D. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making indium phosphide devices
- Patent number 4,738,934
- Issue date Apr 19, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Wilbur D. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOCVD of semi-insulating indium phosphide based compositions
- Patent number 4,716,130
- Issue date Dec 29, 1987
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Wilbur D. Johnston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor devices employing Fe-doped MOCVD InP-based layer for...
- Patent number 4,660,208
- Issue date Apr 21, 1987
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Wilbur D. Johnston
- H01 - BASIC ELECTRIC ELEMENTS

Wilbur D. Johnston Jr.

Person

Patents Grantslast 30 patents

Semi-insulated indium phosphide based compositions

Process for making integrated laser/modulators

Method of controlling dopant incorporation in high resistivity In-b...

Method of making a semiconductor-insulator-semiconductor structure

Semiconductor devices employing high resistivity in-based compound...

Single crystal films of cubic group II fluorides on semiconductor c...

Method of fabricating single crystal films of cubic group II fluori...

Method of making indium phosphide devices

MOCVD of semi-insulating indium phosphide based compositions

Semiconductor devices employing Fe-doped MOCVD InP-based layer for...