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William C. Niehaus
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Murray Hill, NJ, US
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last 30 patents
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Patent Grant
GaAs FETs Having long-term stability
Patent number
4,426,656
Issue date
Jan 17, 1984
Bell Telephone Laboratories, Incorporated
James V. DiLorenzo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for producing contact to GaAs active region
Patent number
4,301,188
Issue date
Nov 17, 1981
Bell Telephone Laboratories, Incorporated
William C. Niehaus
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device gate-drain configuration
Patent number
4,300,148
Issue date
Nov 10, 1981
Bell Telephone Laboratories, Incorporated
William C. Niehaus
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device drain contact configuration
Patent number
4,196,439
Issue date
Apr 1, 1980
Bell Telephone Laboratories, Incorporated
William C. Niehaus
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
Patent number
4,186,410
Issue date
Jan 29, 1980
Bell Telephone Laboratories, Incorporated
Alfred Y. Cho
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Producing high efficiency gallium arsenide IMPATT diodes utilizing...
Patent number
4,106,959
Issue date
Aug 15, 1978
Bell Telephone Laboratories, Incorporated
James Vincent DiLorenzo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High efficiency gallium arsenide impatt diodes
Patent number
3,986,192
Issue date
Oct 12, 1976
Bell Telephone Laboratories, Incorporated
James Vincent DiLorenzo
H01 - BASIC ELECTRIC ELEMENTS