William C. Wille

Person

Red Hook, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming integrated circuit devices having ion-cured elec...
- Patent number 7,838,390
- Issue date Nov 23, 2010
- Samsung Electronics Co., Ltd.
- Jun-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form improved isolation in a semiconductor...
- Patent number 7,635,899
- Issue date Dec 22, 2009
- International Business Machines Corporation
- Haining S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress engineering using dual pad nitride with selective SOI device...
- Patent number 7,550,364
- Issue date Jun 23, 2009
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress engineering using dual pad nitride with selective SOI device...
- Patent number 7,202,513
- Issue date Apr 10, 2007
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and method of fabricating thereof
- Patent number 7,183,130
- Issue date Feb 27, 2007
- International Business Machines Corporation
- Joachim Nuetzel
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming damascene structure utilizing planarizing materi...
- Patent number 7,030,031
- Issue date Apr 18, 2006
- International Business Machines Corporation
- William C. Wille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro electromechanical switch having self-aligned spacers
- Patent number 6,762,667
- Issue date Jul 13, 2004
- International Business Machines Corporation
- Richard P. Volant
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Micro electromechanical switch having self-aligned spacers
- Patent number 6,621,392
- Issue date Sep 16, 2003
- International Business Machines Corporation
- Richard P. Volant
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Field effect transistors with vertical gate side walls and method f...
- Patent number 6,593,617
- Issue date Jul 15, 2003
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anisotropic nitride etch process with high selectivity to oxide and...
- Patent number 6,461,529
- Issue date Oct 8, 2002
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for planarizing photoresist
- Patent number 6,361,402
- Issue date Mar 26, 2002
- International Business Machines Corporation
- Donald F. Canaperi
- B24 - GRINDING POLISHING
Information Patent Grant
Resist formulation which minimizes blistering during etching
- Patent number 6,207,353
- Issue date Mar 27, 2001
- International Business Machines Corporation
- Michael D. Armacost
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Field effect transistors with improved implants and method for maki...
- Patent number 6,143,635
- Issue date Nov 7, 2000
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Baffle plate design for decreasing conductance lost during precipit...
- Patent number 6,093,281
- Issue date Jul 25, 2000
- International Business Machines Corp.
- Richard S. Wise
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for making field effect transistors having sub-lithographic...
- Patent number 6,040,214
- Issue date Mar 21, 2000
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for protecting device components from chemical mechanical p...
- Patent number 5,976,982
- Issue date Nov 2, 1999
- Siemens Aktiengesellschaft
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of etching an oxide layer
- Patent number 5,811,357
- Issue date Sep 22, 1998
- International Business Machines Corporation
- Michael D. Armacost
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods of Forming Integrated Circuit Devices Having Ion-Cured Elec...
- Publication number 20090098706
- Publication date Apr 16, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Jun-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ETCHING METHODS
- Publication number 20090047791
- Publication date Feb 19, 2009
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM IMPROVED ISOLATION IN A SEMICONDUCTOR...
- Publication number 20080171420
- Publication date Jul 17, 2008
- International Business Machines Corporation
- Haining S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING ISOLATION REGION WITH VARIABLE LI...
- Publication number 20070293016
- Publication date Dec 20, 2007
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR HAVING LATERAL EXTENSIONS IN ONLY ONE DIRECTION AN...
- Publication number 20070267671
- Publication date Nov 22, 2007
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENGINEERING USING DUAL PAD NITRIDE WITH SELECTIVE SOI DEVICE...
- Publication number 20070122965
- Publication date May 31, 2007
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENGINEERING USING DUAL PAD NITRIDE WITH SELECTIVE SOI DEVICE...
- Publication number 20070069294
- Publication date Mar 29, 2007
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THEREOF
- Publication number 20050023581
- Publication date Feb 3, 2005
- International Business Machines Corporation
- Joachim Nuetzel
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING DAMASCENE STRUCTURE UTILIZING PLANARIZING MATERI...
- Publication number 20040266201
- Publication date Dec 30, 2004
- International Business Machines Corporation
- William C. Wille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Micro electromechanical switch having self-aligned spacers
- Publication number 20030210124
- Publication date Nov 13, 2003
- Richard P. Volant
- B81 - MICRO-STRUCTURAL TECHNOLOGY

William C. Wille

Person

Patents Grantslast 30 patents

Methods of forming integrated circuit devices having ion-cured elec...

Structure and method to form improved isolation in a semiconductor...

Stress engineering using dual pad nitride with selective SOI device...

Stress engineering using dual pad nitride with selective SOI device...

Magnetic random access memory and method of fabricating thereof

Method for forming damascene structure utilizing planarizing materi...

Micro electromechanical switch having self-aligned spacers

Micro electromechanical switch having self-aligned spacers

Field effect transistors with vertical gate side walls and method f...

Anisotropic nitride etch process with high selectivity to oxide and...

Method for planarizing photoresist

Resist formulation which minimizes blistering during etching

Field effect transistors with improved implants and method for maki...

Baffle plate design for decreasing conductance lost during precipit...

Method for making field effect transistors having sub-lithographic...

Methods for protecting device components from chemical mechanical p...

Process of etching an oxide layer

Patents Applicationslast 30 patents

Methods of Forming Integrated Circuit Devices Having Ion-Cured Elec...

SEMICONDUCTOR ETCHING METHODS

STRUCTURE AND METHOD TO FORM IMPROVED ISOLATION IN A SEMICONDUCTOR...

SEMICONDUCTOR STRUCTURE INCLUDING ISOLATION REGION WITH VARIABLE LI...

TRENCH CAPACITOR HAVING LATERAL EXTENSIONS IN ONLY ONE DIRECTION AN...

STRESS ENGINEERING USING DUAL PAD NITRIDE WITH SELECTIVE SOI DEVICE...

STRESS ENGINEERING USING DUAL PAD NITRIDE WITH SELECTIVE SOI DEVICE...

MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THEREOF

METHOD FOR FORMING DAMASCENE STRUCTURE UTILIZING PLANARIZING MATERI...

Micro electromechanical switch having self-aligned spacers