William F. Clark, Jr.

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including high field regions and related method
- Patent number 8,350,338
- Issue date Jan 8, 2013
- International Business Machines Corporations
- William F. Clark, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having ohmic body contact(s), an integrated...
- Patent number 8,299,544
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pixel sensor cell with a dual work function gate electode
- Patent number 8,299,505
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric field effect transistor structure and method
- Patent number 8,288,806
- Issue date Oct 16, 2012
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator based radiation detection device and method
- Patent number 8,106,457
- Issue date Jan 31, 2012
- International Business Machines Corporation
- William F. Clark, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric field effect transistor structure and method
- Patent number 8,053,314
- Issue date Nov 8, 2011
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of changing threshold voltages of semiconductor transistors...
- Patent number 8,039,376
- Issue date Oct 18, 2011
- International Business Machines Corporation
- William F. Clark, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect structure including carbon alloyed channel region and...
- Patent number 8,017,489
- Issue date Sep 13, 2011
- International Business Machines Corporation
- William F. Clark, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge breakdown avoidance for MIM elements in SOI base technology...
- Patent number 7,977,200
- Issue date Jul 12, 2011
- International Business Machines Corporation
- William F. Clark, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully-depleted low-body doping field effect transistor (FET) with r...
- Patent number 7,943,997
- Issue date May 17, 2011
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and back-gated transistor structure and method
- Patent number 7,939,417
- Issue date May 10, 2011
- International Business Machines Corporation
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced floating body effect without impact on performance-enhancin...
- Patent number 7,936,017
- Issue date May 3, 2011
- International Business Machines Corporation
- William F. Clark, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including transistor having gate and body in direct self-...
- Patent number 7,937,675
- Issue date May 3, 2011
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure
- Patent number 7,932,134
- Issue date Apr 26, 2011
- International Business Machines Corporation
- William F. Clark, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric field effect transistor structure and method
- Patent number 7,915,670
- Issue date Mar 29, 2011
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal gate dense interconnect and method of manufactu...
- Patent number 7,910,418
- Issue date Mar 22, 2011
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for bolometric on-chip temperature sensor
- Patent number 7,891,865
- Issue date Feb 22, 2011
- International Business Machines Corporation
- William F. Clark, Jr.
- G01 - MEASURING TESTING
Information Patent Grant
Method for fabricating a field effect transistor having a dual thic...
- Patent number 7,851,315
- Issue date Dec 14, 2010
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric field effect transistor structure and method
- Patent number 7,843,016
- Issue date Nov 30, 2010
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost FEOL for ultra-low power, near sub-vth device structures
- Patent number 7,816,738
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combination planar FET and FinFET device
- Patent number 7,772,656
- Issue date Aug 10, 2010
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high voltage fully depleted SOI transistor an...
- Patent number 7,745,879
- Issue date Jun 29, 2010
- International Business Machines Corporation
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bolometric on-chip temperature sensor
- Patent number 7,736,053
- Issue date Jun 15, 2010
- International Business Machines Corporation
- William F. Clark, Jr.
- G01 - MEASURING TESTING
Information Patent Grant
Circuit to compensate threshold voltage variation due to process va...
- Patent number 7,667,527
- Issue date Feb 23, 2010
- International Business Machines Corporation
- William F. Clark, Jr.
- G05 - CONTROLLING REGULATING
Information Patent Grant
Method of forming a transistor having gate and body in direct self-...
- Patent number 7,659,155
- Issue date Feb 9, 2010
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with thin gate electrode and method of fabr...
- Patent number 7,560,753
- Issue date Jul 14, 2009
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having pairs of parallel complementary FinFETs
- Patent number 7,517,806
- Issue date Apr 14, 2009
- International Business Machines Corporation
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin logic and backgated ultra-thin SRAM
- Patent number 7,494,850
- Issue date Feb 24, 2009
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bolometric on-chip temperature sensor
- Patent number 7,484,886
- Issue date Feb 3, 2009
- International Business Machines Corporation
- William F. Clark, Jr.
- G01 - MEASURING TESTING
Information Patent Grant
Four-bit finfet NVRAM memory device
- Patent number 7,416,941
- Issue date Aug 26, 2008
- International Business Machines Corporation
- Brent A. Anderson
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PIXEL SENSOR CELL WITH A DUAL WORK FUNCTION GATE ELECTODE
- Publication number 20120301990
- Publication date Nov 29, 2012
- International Business Machines Corporation
- Brent A. ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DAMASCENE METAL GATE AND SHIELD STRUCTURE, METHODS OF MANUFACTURE A...
- Publication number 20120235216
- Publication date Sep 20, 2012
- International Business Machines Corporation
- Brent A. ANDERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PIXEL SENSOR CELL WITH A DUAL WORK FUNCTION GATE ELECTODE
- Publication number 20120211854
- Publication date Aug 23, 2012
- International Business Machines Corporation
- Brent A. ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING HIGH FIELD REGIONS AND RELATED METHOD
- Publication number 20120199906
- Publication date Aug 9, 2012
- International Business Machines Corporation
- William F. Clark, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIXEL SENSOR CELLS WITH A SPLIT-DIELECTRIC TRANSFER GATE
- Publication number 20120181588
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Brent A. ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD
- Publication number 20120168832
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING OHMIC BODY CONTACT(S), AN INTEGRATED...
- Publication number 20120168878
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE SEMICONDUCTOR-ON-INSULATOR DEVICE
- Publication number 20120132994
- Publication date May 31, 2012
- International Business Machines Corporation
- William F. Clark, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARACTOR
- Publication number 20110291171
- Publication date Dec 1, 2011
- International Business Machines Corporation
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-UNIFORM GATE DIELECTRIC CHARGE FOR PIXEL SENSOR CELLS AND METHO...
- Publication number 20110278649
- Publication date Nov 17, 2011
- International Business Machines Corporation
- Brent A. ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE BREAKDOWN AVOIDANCE FOR MIM ELEMENTS IN SOI BASE TECHNOLOGY...
- Publication number 20110221030
- Publication date Sep 15, 2011
- International Business Machines Corporation
- William F. CLARK, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD
- Publication number 20110101449
- Publication date May 5, 2011
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH FIELD SHIELD AND METHOD OF FORMING THE...
- Publication number 20100047972
- Publication date Feb 25, 2010
- International Business Machines Corporation
- William F. Clark, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND BACK-GATED TRANSISTOR STRUCTURE AND METHOD
- Publication number 20090298250
- Publication date Dec 3, 2009
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Floating Body Effect Without Impact on Performance-Enhancin...
- Publication number 20090283828
- Publication date Nov 19, 2009
- William F. Clark, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY-DEPLETED LOW-BODY DOPING FIELD EFFECT TRANSISTOR (FET) WITH R...
- Publication number 20090261415
- Publication date Oct 22, 2009
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE BREAKDOWN AVOIDANCE FOR MIM ELEMENTS IN SOI BASE TECHNOLOGY...
- Publication number 20090230474
- Publication date Sep 17, 2009
- William F. Clark, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT STRUCTURE INCLUDING CARBON ALLOYED CHANNEL REGION AND...
- Publication number 20090230475
- Publication date Sep 17, 2009
- William F. Clark, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Metal Gate Dense Interconnect and Method of Manufactu...
- Publication number 20090189223
- Publication date Jul 30, 2009
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH FIELD SHIELD AND METHOD OF FORMING THE...
- Publication number 20090127595
- Publication date May 21, 2009
- International Business Machines Corporation
- William F. Clark, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF CHANGING THRESHOLD VOLTAGES OF SEMICONDUCTOR TRANSISTORS...
- Publication number 20090124069
- Publication date May 14, 2009
- William F. Clark, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN STRUCTURE INCLUDING TRANSISTOR HAVING GATE AND BODY IN DIREC...
- Publication number 20090119626
- Publication date May 7, 2009
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOLOMETRIC ON-CHIP TEMPERATURE SENSOR
- Publication number 20090110023
- Publication date Apr 30, 2009
- International Business Machines Corporation
- William F. Clark, JR.
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF FABRICATING HIGH VOLTAGE FULLY DEPLETED SOI TRANSISTOR AN...
- Publication number 20090096026
- Publication date Apr 16, 2009
- International Business Machines Corporation
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD
- Publication number 20090020830
- Publication date Jan 22, 2009
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD
- Publication number 20090020806
- Publication date Jan 22, 2009
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOLOMETRIC ON-CHIP TEMPERATURE SENSOR
- Publication number 20070258503
- Publication date Nov 8, 2007
- William F. Clark, Jr.
- G01 - MEASURING TESTING

William F. Clark, Jr.

Person

Patents Grantslast 30 patents

Semiconductor device including high field regions and related method

Field effect transistor having ohmic body contact(s), an integrated...

Pixel sensor cell with a dual work function gate electode

Asymmetric field effect transistor structure and method

Silicon-on-insulator based radiation detection device and method

Asymmetric field effect transistor structure and method

Methods of changing threshold voltages of semiconductor transistors...

Field effect structure including carbon alloyed channel region and...

Charge breakdown avoidance for MIM elements in SOI base technology...

Fully-depleted low-body doping field effect transistor (FET) with r...

Bipolar transistor and back-gated transistor structure and method

Reduced floating body effect without impact on performance-enhancin...

Structure including transistor having gate and body in direct self-...

Method of forming a semiconductor structure

Asymmetric field effect transistor structure and method

Complementary metal gate dense interconnect and method of manufactu...

Structure for bolometric on-chip temperature sensor

Method for fabricating a field effect transistor having a dual thic...

Asymmetric field effect transistor structure and method

Low-cost FEOL for ultra-low power, near sub-vth device structures

Combination planar FET and FinFET device

Method of fabricating high voltage fully depleted SOI transistor an...

Bolometric on-chip temperature sensor

Circuit to compensate threshold voltage variation due to process va...

Method of forming a transistor having gate and body in direct self-...

Field effect transistor with thin gate electrode and method of fabr...

Integrated circuit having pairs of parallel complementary FinFETs

Ultra-thin logic and backgated ultra-thin SRAM

Bolometric on-chip temperature sensor

Four-bit finfet NVRAM memory device

Patents Applicationslast 30 patents

PIXEL SENSOR CELL WITH A DUAL WORK FUNCTION GATE ELECTODE

DAMASCENE METAL GATE AND SHIELD STRUCTURE, METHODS OF MANUFACTURE A...

PIXEL SENSOR CELL WITH A DUAL WORK FUNCTION GATE ELECTODE

SEMICONDUCTOR DEVICE INCLUDING HIGH FIELD REGIONS AND RELATED METHOD

PIXEL SENSOR CELLS WITH A SPLIT-DIELECTRIC TRANSFER GATE

ASYMMETRIC FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD

FIELD EFFECT TRANSISTOR HAVING OHMIC BODY CONTACT(S), AN INTEGRATED...

HIGH-VOLTAGE SEMICONDUCTOR-ON-INSULATOR DEVICE

VARACTOR

NON-UNIFORM GATE DIELECTRIC CHARGE FOR PIXEL SENSOR CELLS AND METHO...

CHARGE BREAKDOWN AVOIDANCE FOR MIM ELEMENTS IN SOI BASE TECHNOLOGY...

ASYMMETRIC FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD

SEMICONDUCTOR STRUCTURE WITH FIELD SHIELD AND METHOD OF FORMING THE...

BIPOLAR TRANSISTOR AND BACK-GATED TRANSISTOR STRUCTURE AND METHOD

Reduced Floating Body Effect Without Impact on Performance-Enhancin...

FULLY-DEPLETED LOW-BODY DOPING FIELD EFFECT TRANSISTOR (FET) WITH R...

CHARGE BREAKDOWN AVOIDANCE FOR MIM ELEMENTS IN SOI BASE TECHNOLOGY...

FIELD EFFECT STRUCTURE INCLUDING CARBON ALLOYED CHANNEL REGION AND...

Complementary Metal Gate Dense Interconnect and Method of Manufactu...

SEMICONDUCTOR STRUCTURE WITH FIELD SHIELD AND METHOD OF FORMING THE...

METHODS OF CHANGING THRESHOLD VOLTAGES OF SEMICONDUCTOR TRANSISTORS...

DESIGN STRUCTURE INCLUDING TRANSISTOR HAVING GATE AND BODY IN DIREC...

BOLOMETRIC ON-CHIP TEMPERATURE SENSOR

METHOD OF FABRICATING HIGH VOLTAGE FULLY DEPLETED SOI TRANSISTOR AN...

ASYMMETRIC FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD

ASYMMETRIC FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD

BOLOMETRIC ON-CHIP TEMPERATURE SENSOR