William J. Gallagher

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming MTJS with lithography-variation independent crit...
- Patent number 12,058,940
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,041,855
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- MingYuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,864,466
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,778,924
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- MingYuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM device having self-aligned shunting layer
- Patent number 11,522,009
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,502,241
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- MingYuan Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming MTJS with lithography-variation independent crit...
- Patent number 11,404,633
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOT-MRAM with shared selector
- Patent number 11,289,143
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- MingYuan Song
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic memory device with balancing synthetic anti-ferromagnetic...
- Patent number 11,081,153
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gaurav Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,075,336
- Issue date Jul 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with superparamagnetic layer
- Patent number 11,031,544
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gaurav Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 10,541,361
- Issue date Jan 21, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chwen Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Write algorithm for memory to reduce failure rate of write operations
- Patent number 10,276,227
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method for controlling the same
- Patent number 9,767,878
- Issue date Sep 19, 2017
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANT LTD.
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference circuit and MRAM
- Patent number 9,734,883
- Issue date Aug 15, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chwen Yu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION
- Publication number 20240357941
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240324471
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MingYuan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240315051
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
- Publication number 20240090237
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20230380294
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MingYuan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230345738
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
- Publication number 20230076145
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220384714
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MingYuan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRIT...
- Publication number 20220359820
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming the Same
- Publication number 20210408115
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20210351346
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay LIN
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20210202827
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- MingYuan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRIT...
- Publication number 20210135098
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOT-MRAM with Shared Selector
- Publication number 20210134339
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- MingYuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
- Publication number 20210036054
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20200152865
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH SUPERPARAMAGNETIC LAYER
- Publication number 20200106001
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Gaurav Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE WITH BALANCING SYNTHETIC ANTI-FERROMAGNETIC...
- Publication number 20200005845
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Gaurav Gupta
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20190165260
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chwen Yu
- G11 - INFORMATION STORAGE
Information Patent Application
Write Algorithm for Memory
- Publication number 20180315464
- Publication date Nov 1, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING THE SAME
- Publication number 20170278557
- Publication date Sep 28, 2017
- Yu-Der CHIH
- G11 - INFORMATION STORAGE

William J. Gallagher

Person

Patents Grantslast 30 patents

Method for forming MTJS with lithography-variation independent crit...

Magnetic device and magnetic random access memory

Magnetic random access memory and manufacturing method thereof

Magnetic device and magnetic random access memory

MRAM device having self-aligned shunting layer

Magnetic device and magnetic random access memory

Method for forming MTJS with lithography-variation independent crit...

SOT-MRAM with shared selector

Magnetic memory device with balancing synthetic anti-ferromagnetic...

Magnetic random access memory and manufacturing method thereof

Memory device with superparamagnetic layer

Magnetic random access memory and manufacturing method thereof

Write algorithm for memory to reduce failure rate of write operations

Semiconductor memory device and method for controlling the same

Reference circuit and MRAM

Patents Applicationslast 30 patents

MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

METHOD FOR FORMING MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRIT...

Semiconductor Device and Method for Forming the Same

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

METHOD FOR FORMING MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRIT...

SOT-MRAM with Shared Selector

MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE WITH SUPERPARAMAGNETIC LAYER

MAGNETIC MEMORY DEVICE WITH BALANCING SYNTHETIC ANTI-FERROMAGNETIC...

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

Write Algorithm for Memory

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING THE SAME