William Kirklen Henson

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Work function adjustment by carbon implant in semiconductor devices...
- Patent number 9,252,146
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) device having gate s...
- Patent number 9,082,877
- Issue date Jul 14, 2015
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment for thin body MOSFETs
- Patent number 9,040,399
- Issue date May 26, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for pFET junction profile with SiGe channel
- Patent number 8,962,417
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Kern Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for using high-K material as an etch stop laye...
- Patent number 8,946,721
- Issue date Feb 3, 2015
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) device having gate s...
- Patent number 8,803,243
- Issue date Aug 12, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for work function engineering in transistors i...
- Patent number 8,728,925
- Issue date May 20, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment by carbon implant in semiconductor devices...
- Patent number 8,729,637
- Issue date May 20, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for using high-k material as an etch stop laye...
- Patent number 8,673,757
- Issue date Mar 18, 2014
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for pFET junction profile with SiGe channel
- Patent number 8,659,054
- Issue date Feb 25, 2014
- International Business Machines Corporation
- Kern Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned embedded SiGe structure and method of manufacturing th...
- Patent number 8,598,009
- Issue date Dec 3, 2013
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k dielectric gate structures resistant to oxide growth at the...
- Patent number 8,575,709
- Issue date Nov 5, 2013
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate CMOS
- Patent number 8,507,992
- Issue date Aug 13, 2013
- International Business Machines Corporation
- Renee T. Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing threshold voltage adjustment through gate diele...
- Patent number 8,354,309
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for work function engineering in transistors i...
- Patent number 8,350,341
- Issue date Jan 8, 2013
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k dielectric gate structures resistant to oxide growth at the...
- Patent number 8,318,565
- Issue date Nov 27, 2012
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efuse containing sige stack
- Patent number 8,299,570
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Deok-kee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of improved SOI substrates using bulk semiconductor wafers
- Patent number 8,268,698
- Issue date Sep 18, 2012
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K dielectric and metal gate stack with minimal overlap with is...
- Patent number 8,232,606
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for gate height scaling with high-k/metal gate...
- Patent number 8,227,870
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned embedded SiGe structure and method of manufacturing th...
- Patent number 8,222,673
- Issue date Jul 17, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for gate height scaling with high-k/metal gate...
- Patent number 8,138,037
- Issue date Mar 20, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment through gate dielectric stack modifica...
- Patent number 8,106,455
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stack and semiconductor gate stack for CMOS devices
- Patent number 8,030,709
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k dielectric and metal gate stack with minimal overlap with is...
- Patent number 8,021,939
- Issue date Sep 20, 2011
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS (complementary metal oxide semiconductor) devices having metal...
- Patent number 8,018,005
- Issue date Sep 13, 2011
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
eFuse containing SiGe stack
- Patent number 8,004,059
- Issue date Aug 23, 2011
- International Business Machines Corporation
- Deok-kee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
eFuse with partial SiGe layer and design structure therefor
- Patent number 7,960,809
- Issue date Jun 14, 2011
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical fuse having a fully silicided fuselink and enhanced flux...
- Patent number 7,943,493
- Issue date May 17, 2011
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate CMOS
- Patent number 7,943,460
- Issue date May 17, 2011
- International Business Machines Corporation
- Renee T. Mo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED EFUSE
- Publication number 20180166402
- Publication date Jun 14, 2018
- GLOBALFOUNDRIES INC.
- Viraj SARDESAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE PATTERNING METHOD FOR SUBSTRATE
- Publication number 20170170016
- Publication date Jun 15, 2017
- GLOBALFOUNDRIES INC.
- Woo-Hyeong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE HAVING GATE S...
- Publication number 20140349451
- Publication date Nov 27, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR pFET JUNCTION PROFILE WITH SiGe CHANNEL
- Publication number 20140273381
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kern Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES...
- Publication number 20140246727
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR USING HIGH-K MATERIAL AS AN ETCH STOP LAYE...
- Publication number 20130175634
- Publication date Jul 11, 2013
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Metal Oxide Semiconductor (CMOS) Device Having Gate S...
- Publication number 20130168776
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment For Thin Body Mosfets
- Publication number 20130105896
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS
- Publication number 20130105894
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Adjustment By Carbon Implant In Semiconductor Devices...
- Publication number 20130087859
- Publication date Apr 11, 2013
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE...
- Publication number 20120286374
- Publication date Nov 15, 2012
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS I...
- Publication number 20120214299
- Publication date Aug 23, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...
- Publication number 20120208337
- Publication date Aug 16, 2012
- GLOBALFOUNDRIES INC.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR GATE HEIGHT SCALING WITH HIGH-K/METAL GATE...
- Publication number 20120126335
- Publication date May 24, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR USING HIGH-K MATERIAL AS AN ETCH STOP LAYE...
- Publication number 20120104505
- Publication date May 3, 2012
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT THROUGH GATE DIELECTRIC STACK MODIFICA...
- Publication number 20120108017
- Publication date May 3, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for pFET Junction Profile With SiGe Channel
- Publication number 20120091506
- Publication date Apr 19, 2012
- International Business Machines Corporation
- Kern Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...
- Publication number 20110298008
- Publication date Dec 8, 2011
- GLOBALFOUNDRIES INC.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EFUSE CONTAINING SIGE STACK
- Publication number 20110272779
- Publication date Nov 10, 2011
- International Business Machines Corporation
- Deok-Kee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS I...
- Publication number 20110248350
- Publication date Oct 13, 2011
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC AND METAL GATE STACK WITH MINIMAL OVERLAP WITH IS...
- Publication number 20110227171
- Publication date Sep 22, 2011
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE...
- Publication number 20110221012
- Publication date Sep 15, 2011
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE CMOS
- Publication number 20110156158
- Publication date Jun 30, 2011
- International Business Machines Corporation
- Renee T. Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS
- Publication number 20110147885
- Publication date Jun 23, 2011
- International Business Machines Corporation
- William K. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL FUSE HAVING A FULLY SILICIDED FUSELINK AND ENHANCED FLUX...
- Publication number 20100330783
- Publication date Dec 30, 2010
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment Through Gate Dielectric Stack Modifica...
- Publication number 20100276753
- Publication date Nov 4, 2010
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Automated Generation of Oxide Pillar Slot Shapes in Silicon-On-Insu...
- Publication number 20100269085
- Publication date Oct 21, 2010
- International Business Machines Corporation
- William Kirklen Henson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
High-K Metal Gate CMOS
- Publication number 20100264495
- Publication date Oct 21, 2010
- International Business Machines Corporation
- Renee T. Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) DEVICES HAVING METAL...
- Publication number 20100258875
- Publication date Oct 14, 2010
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR GATE HEIGHT SCALING WITH HIGH-K/METAL GATE...
- Publication number 20100237435
- Publication date Sep 23, 2010
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

William Kirklen Henson

Person

Patents Grantslast 30 patents

Work function adjustment by carbon implant in semiconductor devices...

Complementary metal oxide semiconductor (CMOS) device having gate s...

Threshold voltage adjustment for thin body MOSFETs

Method and structure for pFET junction profile with SiGe channel

Structure and method for using high-K material as an etch stop laye...

Complementary metal oxide semiconductor (CMOS) device having gate s...

Method and structure for work function engineering in transistors i...

Work function adjustment by carbon implant in semiconductor devices...

Structure and method for using high-k material as an etch stop laye...

Method and structure for pFET junction profile with SiGe channel

Self-aligned embedded SiGe structure and method of manufacturing th...

High-k dielectric gate structures resistant to oxide growth at the...

High-K metal gate CMOS

Method of providing threshold voltage adjustment through gate diele...

Method and structure for work function engineering in transistors i...

High-k dielectric gate structures resistant to oxide growth at the...

Efuse containing sige stack

Formation of improved SOI substrates using bulk semiconductor wafers

High-K dielectric and metal gate stack with minimal overlap with is...

Method and structure for gate height scaling with high-k/metal gate...

Self-aligned embedded SiGe structure and method of manufacturing th...

Method and structure for gate height scaling with high-k/metal gate...

Threshold voltage adjustment through gate dielectric stack modifica...

Metal gate stack and semiconductor gate stack for CMOS devices

High-k dielectric and metal gate stack with minimal overlap with is...

CMOS (complementary metal oxide semiconductor) devices having metal...

eFuse containing SiGe stack

eFuse with partial SiGe layer and design structure therefor

Electrical fuse having a fully silicided fuselink and enhanced flux...

High-K metal gate CMOS

Patents Applicationslast 30 patents

INTEGRATED EFUSE

MULTIPLE PATTERNING METHOD FOR SUBSTRATE

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE HAVING GATE S...

METHOD AND STRUCTURE FOR pFET JUNCTION PROFILE WITH SiGe CHANNEL

WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES...

STRUCTURE AND METHOD FOR USING HIGH-K MATERIAL AS AN ETCH STOP LAYE...

Complementary Metal Oxide Semiconductor (CMOS) Device Having Gate S...

Threshold Voltage Adjustment For Thin Body Mosfets

THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS

Work Function Adjustment By Carbon Implant In Semiconductor Devices...

HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE...

METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS I...

SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...

METHOD AND STRUCTURE FOR GATE HEIGHT SCALING WITH HIGH-K/METAL GATE...

STRUCTURE AND METHOD FOR USING HIGH-K MATERIAL AS AN ETCH STOP LAYE...

THRESHOLD VOLTAGE ADJUSTMENT THROUGH GATE DIELECTRIC STACK MODIFICA...

Method and Structure for pFET Junction Profile With SiGe Channel

SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...

EFUSE CONTAINING SIGE STACK

METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS I...

HIGH-K DIELECTRIC AND METAL GATE STACK WITH MINIMAL OVERLAP WITH IS...

HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE...

HIGH-K METAL GATE CMOS

FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS

ELECTRICAL FUSE HAVING A FULLY SILICIDED FUSELINK AND ENHANCED FLUX...

Threshold Voltage Adjustment Through Gate Dielectric Stack Modifica...

Automated Generation of Oxide Pillar Slot Shapes in Silicon-On-Insu...

High-K Metal Gate CMOS

CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) DEVICES HAVING METAL...

METHOD AND STRUCTURE FOR GATE HEIGHT SCALING WITH HIGH-K/METAL GATE...